화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Journal of Industrial and Engineering Chemistry, Vol.71, 460-464, March, 2019
DOI10.1016/j.jiec.2018.12.003  Export Citation
Polyurethane triblock copolymer gate dielectrics for low-voltage organic thin-film transistors
Dongkyu Kim, Choongik Kim†, and Taeshik Earmme1, †
  • Department of Chemical and Biomolecular Engineering, 35 Baekbeom-ro, Mapo-gu, Sogang University, Seoul 04107, Republic of Korea
  • 1Department of Chemical Engineering, Hongik University, 94 Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea
E-mail:,
Novel polyurethane triblock copolymers comprising polycaprolactone diol (PCL), 1,6 hexamethylene diisocyanate (HMDI), and polyethylene glycol (PEG) were synthesized for use as gate dielectric for organic thin-film transistors (OTFTs). Thin films of polyurethane gate dielectrics processed from solution exhibit excellent insulating properties (~7 x 10-7 A/cm2 at 1 V) as well as large areal capacitance (170 nF/ cm2) with film thickness of ~50 nm. OTFTs are fabricated with representative n-channel organic semiconductor (N,N0-ditridecylperylene-3,4,9,10-tetracarboxylic diimide; PTCDI-C13) using the developed gate dielectrics, and the resulting devices show decent electrical performance with negligible hysteresis at low operating voltage of 1 V.
Keywords:Dielectric;Urethane;Organic thin-film transistors;Copolymer;Hysteresis
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