Silicon thin films have been prepared on SiO2 substrates by remote plasma-enhanced chemical-vapor deposition using H-2/SiH4/Ar gases. The film properties were found to critically depend on the variations of deposition parameters, which include the SiH4 flow rate with a fixed H-2 flow rate, Ar flow rate, and radio frequency (rf) power. The substrate temperature was fixed at 280+/-5 degrees C. The best quality polysilicon film was obtained when the rf(power)/Al ratio was set near 0.5+/-0.05. In addition, the electrical mobility was observed to increase with the increasing SiH4 flow rate. The effects of the deposition parameters variation were discussed to properly account for the observed properties of the thin films studied.