용액 공정을 통한 도핑된 실리콘 나노입자의 합성과 특성

권하영; 임은희; 이성구; 이경균; Hayoung Kwon; Eunhee Lim; Sungkoo Lee; Kyeong K. Lee

Applied Chemistry for Engineering, Vol.21, No.6, 694-696, December, 2010

Export Citation

용액 공정을 통한 도핑된 실리콘 나노입자의 합성과 특성

Synthesis and Characterization of Doped Silicon Nanoparticles by a Solution Route

권하영, 임은희, 이성구, 이경균^†

한국생산기술연구원 청정생산기술연구부

Hayoung Kwon, Eunhee Lim, Sungkoo Lee, and Kyeong K. Lee^†

Green Chemistry & Manufacturing System Division, Korea Institute of Industrial Technology (KITECH), Chungnam 331-825, Korea

E-mail:

초록

용액공정을 이용하여 표면에 알킬기를 도입하고, 붕소(boron) 또는 인(phosphorous)으로 도핑된 실리콘 나노 입자를 합성하였다. 나노 입자의 합성 여부 및 입자크기는 핵자기공명분광기(NMR), 적외선분광기(FT-IR), 자외선가시광선분 광기(UV-Vis), 인광분광기(PL)를 이용하여 분석하였다. 마이크로웨이브 소결기를 이용하여 표면의 알킬기를 제거하고, 결정성을 갖는 필름을 제작하였다. 필름의 조각은 200 μm 정도의 크기를 가지며 큐빅구조를 가지고 있다는 것을 전자주사현미경(FE-SEM)과 투과전자현미경(FR-TEM)으로 확인할 수 있었다. 필름의 전도도는 도핑 타입을 통해 조절할 수 있었다.

We have synthesized boron (or phosphorous) doped silicon nanoparticles (Si-NPs) by a solution process. The surfaces of the Si-NPs were terminated with various alkyl groups to form a protecting layer. The Si-NPs were characterized by UV-Vis, PL, FTIR, and NMR. Through a microwave sintering process, the crystalline thin films of the Si-NPs were prepared by removing the surface alkyl groups. The TEM and SEM images reveal that contiguous films as large as 200 μm in diameter were formed with a cubic structure. The electrical conductivity of the Si film was controlled by a doping type.

Keywords:silicon nanoparticles;silicon films;solution route

[References]

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[Referenced By]

[1] Kamins TI, Williams RS, Chen Y, Chnag YL, Chang YA, Appl. Phys. Lett., 76, 562 (2000)

[2] Lechner R, Stegner A, Pereira R, Dietmueller R, Brandt M, Ebbers A, Trocha M, Wiggers H, Stutzmann M, J. Appl. Phys., 104, 053701 (2008)

[3] Heath JR, Science., 258, 1131 (1992)

[4] KORNOWSKI A, GIERSIG M, VOGEL R, CHEMSEDDINE A, WELLER H, Adv. Mater., 5(9), 634 (1993)

[5] Wilcoxon JP, Samara GA, Appl. Phys. Lett., 74, 3164 (1999)

[6] Shirahata N, Furumi S, Sakka Y, J. Cryst. Growth, 311(3), 634 (2009)

[7] Yang CS, Bley RA, Kauzlarich SM, Lee HWH, Delgado GR, J. Am. Chem. Soc., 121(22), 5191 (1999)

[8] Kim TW, Cho CH, Kim BH, Park SJ, Appl. Phys.Lett., 88, 123102 (2006)

[9] Baldwin RK, Pettigrew KA, Ratai E, Augustine MP, Kauzlarich SM, Chem. Commun., 1822 (2002)

[10] B. Streetman, Solid State Elect. Devices, 4th Ed, 86, PRENTICE-HALL, Englewood cities Cliffs, New Jersey (1995)