화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Macromolecular Research, Vol.19, No.7, 722-728, July, 2011
DOI10.1007/s13233-011-0705-3  Export Citation
Synthesis of ArF Photoresist Polymer Composed of Three Methacrylate Monomers via Reversible Addition-Fragmentation Chain Transfer (RAFT) Polymerization
Hae-Sung Sohn, Sang-Ho Cha, Won-Ki Lee, Dong-Gyun Kim, Hyo-Jin Yun1, Myung-Sun Kim1, Boo-Deuk Kim1, Young-Ho Kim1, Jae-Woo Lee2, Jeong-Sik Kim2, Deog-Bae Kim2, Jae-Hyun Kim2, and Jong-Chan Lee†
  • Department of Chemical and Biological Engineering, Seoul National University, Seoul, 151-742, Korea
  • 1Manufacturing Technology Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., Gyeonggi, 445-701, Korea
  • 2Electromaterial Business Division, Dongjin Semichem Co., Ltd., Gyeonggi, 445-931, Korea
E-mail:
ArF photoresist polymers were prepared via reversible addition-fragmentation chain transfer (RAFT) polymerization and free radical polymerization (FRP). Three methacrylates with lithographic functionalities including 2-ethyl-2-adamantyl methacrylate (EAdMA), α-gamma-butyrolactone methacrylate (GBLMA), and 3-hydroxy-1-adamantyl methacrylate (HAdMA), were used as monomer components and 2-cyanoprop-2-yl-1-dithionaphthalate (CPDN) was used as the chain transfer agent (CTA). In both polymerizations, the order of monomer reactivity was GBLMA>HAdMA>>EAdMA. This caused a composition gradient in RAFT polymerization as well as composition inhomogeneity in FRP. The polymers prepared by RAFT polymerization had lower molecular weight distributions and more uniform compositions. The improvement in molecular weight distribution and composition uniformity of the polymers prepared by RAFT polymerization should be beneficial for the ArF lithography process.
Keywords:living radical polymerization (LRP);lithography;photoresists;reversible addition fragmentation chain transfer (RAFT).
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