| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Modification of barrier height of metal and silicon with nanoparticles and insulator |
| 초록 | As the feature size of device decreases, the contact resistance between the semiconductor and metal becomes a dominant parasitic factor in the transistor. The Schottky barrier height between the metal and semiconductor has to be decreased for the reduction of contact resistance. However, it is very difficult to reduce the Schottky barrier heights of metal/semiconductor due to the Fermi-level pinning. The Fermi level pinning is formed by the metal induced gap state (MIGS) and interface defect between silicon and metal. Among the methods to overcome this problem, silicide is used for contact materials to reduce the contact resistance of metal/semiconductor. However, it is difficult to form NiSi in a structure having a high aspect ratio. In addition, one of the decreases in contact resistance is the excessive doping of the silicon, which reduces the effective depletion width. However, it is difficult to control the doping concentration, depth and anisotropy of the semiconductor. It is not applicable to 2D material-based devices and organic semiconductors. The thin dielectric layer inserted between metal and semiconductor is the one of methods of modulation of Schottky barrier height. Thin insulator layer prevents the wave function of metal electron from inducing the gap state in semiconductor. Thus, the low Schottky barrier heights of MIS(metal/insulator/silicon) contacts can be achieved between metals and semiconductors. However, in the previous reports, the MIS contact can only partially prevent the electron wave function from forming the fermi level pinning. In this study, we investigated the barrier height modification of metal/semiconductor with platinum nanoparticles (NP) and insulator. ZnO2 thin films were deposited by thermal atomic layer deposition (ALD) on low doped n-type silicon. Pt NPs were deposited by E-beam evaporator. Contact resistance was measured by TLM (transmission line model). The current-voltage (I-V) characteristics of the Schottky barrier diodes (SBD) and TLM were measured by the Agilent semiconductor parameter analyzer. The interlayer of ZnO2 with Pt NPs between metal and semiconductor increased in current density compared to MS(metal/silicon) contact and MIS (Metal/insulator/silicon) contact because the Pt NPs induced the dipole in the insulator and it caused the reduction of depletion width of silicon and contact resistance. |
| 저자 | 김현정, 장우출, 임희우, 권영균, 방민욱, 조해원, 정찬원, 전형탁 |
| 소속 | 한양대 |
| 키워드 | Metal induced gap states (MIGS); Contact resistance; nanoparticles |
