| 학회 |
한국화학공학회 |
| 학술대회 |
2015년 봄 (04/22 ~ 04/24, 제주 ICC) |
| 권호 |
21권 1호, p.906 |
| 발표분야 |
재료 |
| 제목 |
Multiscale simulation of plasma etching process from molecular interactions to feature profile |
| 초록 |
With the continuous decrease in nanoscale design dimensions, semiconductor plasma processing must confront the limits of physicochemical fabrication routes at the atomic scale. Especially, one of the emerging challenges with plasma etch is to understand their inherent complexities with synergetic effects of scattering and sputtering behaviors including steric constraints and non-local effects in surface chemistry, leading to development of cost-effective plasma processes for next generation semiconductor devices. To address this issue, this work present a coupling research between molecular dynamics (MD) simulation and nanoscale feature simulation. It is demonstrated that the 3D feature profile evolution simulations coupled with MD results can be one of best ways to capture key clues to understand the realistic behaviors for next generation plasma etch processes (line & space, or UHARC) in semiconductor industries. |
| 저자 |
육영근1, 유혜성1, 조덕균1, 장원석2, 유동훈3, 최광성1, 임연호1
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| 소속 |
1전북대, 2국가핵융합(연), 3경원테크 |
| 키워드 |
ICP; Etch process; poly-Si etch
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| E-Mail |
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| 원문파일 |
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