| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | G. 나노/박막 재료 |
| 제목 | The Chracteristics of SiO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition using BTBAS precursor |
| 초록 | With increasing demand of better performance, through-silicon-via (TSV) technology has become essential requirement for manufacturing the high bandwidth device. However, the process is required to satisfy the high step coverage (aspect ratio of 20:1) at low temperature (＜ 400 °C). Therefore plasma-enhanced atomic layer deposition (PEALD) became the solution for depositing the low temperature insulating layer using several precursors. And bis(tertiary-butylamino)silane (BTBAS) precursor is attracted as low temperature ALD precursor due to efficient reaction at low temperature. In this study, the thin film thickness was measured by spectroscopic ellipsometry (SE). The chemical composition was measured by Auger electron spectroscopy (AES) depth profiling. And the chemical bonding state was analyzed by X-ray photoelectron spectroscopy (XPS). The metal-oxide-semiconductor (MOS) capacitor was fabricated for electrical characteristic measurement using Pt as top electrode. The SiO2 thin film exhibited very low carbon and nitrogen contents. And chemical composition was oxygen-excess. The oxygen-excess source was analyzed by the XPS results and binding energy difference was explained by the strained Si-O-Si structure. The leakage current was measured at 10-7 A/cm2 at 1 MV/cm and the breakdown voltage difference was also explained by the strained Si-O-Si structure. |
| 저자 | Hyeongtag Jeon1, Honggi Kim2 |
| 소속 | 1Division of Materials Science and Engineering, 2Hanyang Univ. |
| 키워드 | <P>ALD; SiO2; dielectric material; XPS; electrical breakdown; MOS capacitor</P> |
