| 학회 | 한국재료학회 |
| 학술대회 | 2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 | 24권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Atomic Layer Deposition of low-k SiCN Thin Films using DTDN-2 precursor |
| 초록 | SiCN is the very promising candidate as a diffusion layer in Cu damascene process. As semiconductor device sizes are getting smaller with higher density, faster speed and higher performance are highly required. Addressing the resistance-capacitance delay(RC) issue is the key. This issue can be controlled by two ways – lowering resistance and capacitance. Conventionally, SiO2 is used as an interlayer dielectric layer(ILD) with Aluminum as a metal contact/line. This parasitic capacitance in ILD layer can be down by using low-k material, which has a lower dielectric constant than SiO2’s. Recently, Cu and low-k dielectric materials are used in microelectronic devices as the next generation technology instead of Al and SiO2. Process for Cu interconnects uses damascene process, in which there might be Cu diffusion into the ILD region, causing yield drop and low reliability. At this point, it is required to prevent this diffusion with Cu diffusion layer. As a typical diffusion barrier material, silicon nitride(SiN) is used because of high etch selectivity and high performance as Cu diffusion barrier. However, dielectric constant is seven, which is quite high. As candidates, there are SiC, SiOF, SiCO, SiCNO and SiCN. Among them, SiCN is the very attractive material due to relatively lower dielectric constant than SiN and excellent etch selectivity in comparison with other low-k materials. And this film density is 2.0g/cm3 or more, which is eligible for barrier. In the post presentation, the SiCN thin film deposited by remote plasma atomic layer deposition(RPALD) was investigated. Because conventional ALD and PEALD are excluded due to low film density and substrate damage by ion bombardment. RPALD is selected. Bis [(diethylamino) dimethylsilyl] (trimethylsilyl)amine (DTDN-2) precursor and N2 plasma were used with deposition temperatures of 100–300 °C and plasma power 100–300W. The lower plasma power and deposition temperature, the higher carbon composition of SiCN film. The chemical and electrical characteristics of deposited SiCN film were investigated depending on the plasma power and deposition temperature. |
| 저자 | 김현준, 임경필, 정찬원, 조해원, 전형탁 |
| 소속 | 한양대 신소재공학과 |
| 키워드 | low-k dielectric material; Atomic Layer Deposition; SiCN film |
