| 초록 |
As integrated microelectronic circuit device dimensions continue to shrink, low dielectric constant (low-k) interlayer dielectrics are required for minimizing RC signal delay, capacitive coupling noise, and power consumption. The implementation of low-k materials in an interconnected structure, however, is known to be a very difficult task because of many criteria imposed by the structural functionality and the integration process. Here, we report structural reliability evaluation for the integration of low-k nanoporous organosillicate dielectrics into a multilayer structure, involving capping, chemical mechanical polishing, post-CMP cleaning, and thermal annealing processes. We have successfully investigated the structural reliability of the low-k dielectric layer subjected to such harsh processes using synchrotron grazing incidence X-ray scattering and reflectivity analyses. |
