| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | 3Characteristic of the contact resistivity of the metal/insulator/silicon structure |
| 초록 | The semiconductor devices generally are interconnected with metal lines. In the contacts between the semiconductor and metal, the presence of a potential barrier forms a high parasitic resistance which causes the RC delay. The Schottky barrier heights between the metal and semiconductor have to be decreased for the decrease in the contact resistance of metal/semiconductor. Unfortunately, it is difficult to obtain the low Schottky barrier heights of metal/semiconductor because of the strong surface Fermi-level pinning. The metal induced gap state (MIGS) and interface defect between metal and silicon cause the Fermi level pinning. Recently, MIS (metal/insulator/semiconductor) structure contacts are researched to modulate the Schottky barrier heights. The thin insulator layer inserted between metal and semiconductor prevents the wave function of metal electron from inducing the gap state in semiconductor and make Fermi level of the metal depinned. Thereby low Schottky barrier heights of MIS contacts can be achieved between metals and n-type semiconductors. In this work, we researched the characteristics of the contact resistance of various insulator films inserted between metal and semiconductor to compare the contact resistances depending on the silicon conduction band offset. The various thin films (Al2O3, ZrO2, ZnO2 and Si3N4) were deposited by the ALD and deposited on various types of substrates(n-type, n+-type, p-type, p+-type). The contact resistance were measured by TLM (transmission line model). The current-voltage (I-V) characteristics of the Schottky barrier diodes (SBD), TLM were measured by the Agilent B1500A. Among the various insulators, 0.5nm interlayer of ZnO2 induced the increase in current density because the ZnO2 thin film reduce the MIGS effect and Fermi level pinning and silicon band offset of ZnO2 is lower than that of other thin insulator layer. The current density of Au/semiconductor is 10-3A/cm2. However, the current density of Au/ZrO2/n-type semiconductor is 10A/cm2. This result showed that ZrO2 thin film inserted between Au and n-type semiconductor can reduce the MIGS effect and the schottky barrier heights of metal/semiconductor. As the thickness of interlayer increased from 0.5 nm to 2nm, the current density also decreased from 10 A/cm2 to 10-5 A/cm2 due to the increase in the tunnel resistance. |
| 저자 | 김현정, 장우출, 임희우, 권영균, 조해원, 정찬원, 전형탁 |
| 소속 | 한양대 |
| 키워드 | Metal induced gap states (MIGS); Contact resistance; Fermi-level-pinning |
