검색결과 : 18건
| No. | Article |
|---|---|
| 1 |
Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET Daghighi A, Hematian H Solid-State Electronics, 129, 182, 2017 |
| 2 |
High frequency characteristic of a monolithic 500 degrees C OpAmp-RC integrator in SiC bipolar IC technology Tian Y, Zetterling CM Solid-State Electronics, 135, 65, 2017 |
| 3 |
Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications Sasaki KRA, Nicoletti T, Almeida LM, dos Santos SD, Nissimoff A, Aoulaiche M, Simoen E, Claeys C, Martino JA Solid-State Electronics, 97, 30, 2014 |
| 4 |
Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM Almeida LM, Sasaki KRA, Caillat C, Aoulaiche M, Collaert N, Jurczak M, Simoen E, Claeys C, Martino JA Solid-State Electronics, 90, 149, 2013 |
| 5 |
A high current gain gate-controlled lateral bipolar junction transistor with 90 nm CMOS technology for future RF SoC applications Chen SM, Fang YK, Yeh WK, Lee IC, Chiang YT Solid-State Electronics, 52(8), 1140, 2008 |
| 6 |
High temperature characterization of SiCBJTs for power switching applications Sheng K, Yu LC, Zhang J, Zhao JH Solid-State Electronics, 50(6), 1073, 2006 |
| 7 |
Optimization of base-to-emitter spacer thickness to maximize the frequency response of bipolar transistors Lee WK, Chan ACK, Chan M Solid-State Electronics, 49(4), 554, 2005 |
| 8 |
Design and optimization of a 200 GHz SiGeHBT collector profile by TCAD Stricker AD, Johnson JB, Freeman G, Rieh JS Applied Surface Science, 224(1-4), 324, 2004 |
| 9 |
SiCBJT technology for power switching and RF applications Agarwal A, Ryu SH, Capell C, Richmond J, Palmour J, Bartlow H, Chow P, Scozzie S, Tipton W, Baynes T, Jones K Materials Science Forum, 457-460, 1141, 2004 |
| 10 |
A review of SiC power switch: achievements, difficulties and perspectives Sankin I, Merrett JN, Draper WA, Casady JRB, Casady JB Materials Science Forum, 457-460, 1249, 2004 |