검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Electrical characterisation of heavily Al doped 4H-SiC layer grown by vapour-liquid-solid epitaxy in Al-Si melt Godignon P, Jacquier C, Blanque S, Montserrat J, Ferros G, Contreras S, Zielinski M, Monteil Y Materials Science Forum, 483, 421, 2005 |
| 2 |
Homogeneity of nitrogen and phosphorus co-implants in 4H-SiC: Full wafer scale investigation Blanque S, Lyonnet J, Camassel J, Perez R, Terziyska P, Contreras S, Godignon P, Mestres N, Pascual J Materials Science Forum, 483, 645, 2005 |
| 3 |
Room temperature implantation and activation kinetics of nitrogen and phosphorus in 4H-SiC crystals. Blanque S, Perez R, Godignon P, Mestres N, Morvan E, Kerlain A, Dua C, Brylinski C, Zielinski M, Camassel J Materials Science Forum, 457-460, 893, 2004 |
| 4 |
Visible light laser irradiation: A tool for implantation damage reduction Camassel J, Peyre H, Brink DJ, Zielinski M, Blanque S, Mestres N, Godignon P Materials Science Forum, 457-460, 941, 2004 |
| 5 |
A highly effective edge termination design for SiC planar high power devices Perez R, Mestres N, Blanque S, Tournier D, Jorda X, Godignon P, Nipoti R Materials Science Forum, 457-460, 1253, 2004 |
| 6 |
Quantitative evaluation of implantation damage and damage recovery after room temperature ion-implantation of N+ and P+ ions in 6H-SiC Blanque S, Perez R, Zielinski M, Pernot J, Mestres N, Pascual J, Godignon P, Camassell J Materials Science Forum, 433-4, 653, 2002 |