검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Partial dislocations and stacking faults in 4H-SiC PiN diodes Twigg ME, Stahlbush RE, Fatemi M, Arthur SD, Fedison JB, Tucker JB, Wang S Materials Science Forum, 457-460, 537, 2004 |
| 2 |
Propagation of current-induced stacking faults and forward voltage degradation in 4H-SiC PiN diodes Stahlbush RE, Fedison JB, Arthur SD, Rowland LB, Kretchmer JW, Wang S Materials Science Forum, 389-3, 427, 2002 |
| 3 |
Improvement and analysis of implanted-emitter bipolar junction transistors in 4H-SiC Tang Y, Fedison JB, Chow TP Materials Science Forum, 389-3, 1329, 2002 |
| 4 |
Characteristics of epitaxial and implanted N-base 4H-SiC GTO thyristors Fedison JB, Chow TP Materials Science Forum, 353-356, 739, 2001 |
| 5 |
Al/C/B Co-implanted high-voltage 4H-SiC PiN junction rectifiers Fedison JB, Li Z, Khemka V, Ramungul N, Chow TP, Ghezzo M, Kretchmer JW, Elasser A Materials Science Forum, 338-3, 1367, 2000 |
| 6 |
Factors influencing the design and performance of 4H-SiC GTO thyristors Fedison JB, Chow TP, Ghezzo M, Kretchmer JW, Nielsen MC Materials Science Forum, 338-3, 1391, 2000 |
| 7 |
Reactive Ion Etching of GaN in BCl3/N-2 Plasmas Fedison JB, Chow TP, Lu H, Bhat IB Journal of the Electrochemical Society, 144(8), L221, 1997 |