검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Development of large diameter high-purity semi-insulating 4H-SiC wafers for microwave devices Jenny JR, Malta DP, Calus MR, Muller SG, Powell AR, Tsvetkov VF, Hobgood HM, Glass RC, Carter CH Materials Science Forum, 457-460, 35, 2004 |
| 2 |
Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal "hot-walls" Chassagne T, Leycuras A, Balloud C, Arcade P, Peyre H, Juillaguet S Materials Science Forum, 457-460, 273, 2004 |
| 3 |
Investigation of thick 3C-SiC films re-grown on thin 35 nm "Flash Lamp Annealed" 3C-SiC layers Ferro G, Panknin D, Stoemenos J, Balloud C, Camassel J, Polychroniadis E, Monteil Y, Skorupa W Materials Science Forum, 457-460, 313, 2004 |
| 4 |
Characterization of homoepitaxial 4H-SiC layer grown from silane/propane system Sartel C, Bluet JM, Souliere V, El-Harrouni I, Monteil Y, Mermoux M, Guillot G Materials Science Forum, 433-4, 165, 2002 |
| 5 |
Correlation between DLTS and photoluminescence in he-implanted 6H-SiC Frank T, Pensl G, Bai S, Devaty RP, Choyke WJ Materials Science Forum, 338-3, 753, 2000 |
| 6 |
Radiation defects and doping of SiC with phosphorus by Nuclear Transmutation Doping (NTD) Heissenstein H, Sadowski H, Peppermuller C, Helbig R Materials Science Forum, 338-3, 853, 2000 |