검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Preparation of Cu(In,Ga)Se-2 thin film solar cells by two-stage selenization processes using N-2 gas Gremenok VF, Zaretskaya EP, Zalesski VB, Bente K, Schmitz W, Martin RW, Moller H Solar Energy Materials and Solar Cells, 89(2-3), 129, 2005 |
| 2 |
The electrochemistry of gold-platinum alloys Moller H, Pistorius PC Journal of Electroanalytical Chemistry, 570(2), 243, 2004 |
| 3 |
Suppression of Si cavities at the SiC/Si interface during epitaxial growth of 3C-SiC on silicon-on-insulator Moller H, Krotz G, Eickhoff M, Nielsen A, Papaioannou V, Stoemenos J Journal of the Electrochemical Society, 148(1), G16, 2001 |
| 4 |
High temperature 10 bar pressure sensor based on 3C-SiC/SOI for turbine control applications Zappe S, Franklin J, Obermeier E, Eickhoff M, Moller H, Krotz G, Rougeot C, Lefort O, Stoemenos J Materials Science Forum, 353-356, 753, 2001 |
| 5 |
SOL thinning effects on 3C-SiC on SOI Planes N, Moller H, Camassel J, Stoemenos Y, Falkovski L, Eickhoff M, Krotz G Materials Science Forum, 338-3, 301, 2000 |
| 6 |
Structural characteristics of 3C-SiC films epitaxially grown on the Si/Si3N4/SiO2 system Zappe S, Moller H, Krotz G, Eickhoff M, Skorupa W, Obermeier E, Stoemenos J Materials Science Forum, 338-3, 529, 2000 |
| 7 |
Reflection high-energy electron diffraction oscillations on rotating substrates Braun W, Moller H, Johnson SR, Zhang YH Journal of Vacuum Science & Technology B, 17(2), 474, 1999 |
| 8 |
Selective growth of high-quality 3C-SiC using a SiO2 sacrificial-layer technique Eickhoff M, Moller H, Rapp M, Kroetz G Thin Solid Films, 345(2), 197, 1999 |
| 9 |
Reflection high-energy electron diffraction during substrate rotation : A new dimension for in situ characterization Braun W, Moller H, Zhang YH Journal of Vacuum Science & Technology B, 16(3), 1507, 1998 |
| 10 |
Pyrometric Interferometry for Real-Time Molecular-Beam Epitaxy Process Monitoring Bobel FG, Moller H, Wowchak A, Hertl B, Vanhove J, Chow LA, Chow PP Journal of Vacuum Science & Technology B, 12(2), 1207, 1994 |