화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Controlled n-type doping of antimonides and arsenides using GaTe
Bennett BR, Magno R, Papanicolaou N
Journal of Crystal Growth, 251(1-4), 532, 2003
2 Deep levels in ion implanted field effect transistors on SiC
Mitra S, Rao MV, Jones K, Papanicolaou N, Wilson S
Solid-State Electronics, 47(2), 193, 2003
3 Characteristics of MESFETs made by ion-implantation in bulk semi-insulating 4H-SiC
Mitra S, Tucker JB, Rao MV, Papanicolaou N, Jones KA
Materials Science Forum, 389-3, 1391, 2002
4 Characteristics of n-p junction diodes made by double-implantations into SiC
Tucker JB, Handy EM, Rao MV, Holland OW, Papanicolaou N, Jones KA
Materials Science Forum, 338-3, 925, 2000
5 Structural and morphological characterization of Al/Ti-based ohmic contacts on p-type 4H-SiC annealed under various conditions
Vassilevski KV, Zekentes K, Constantinidis G, Papanicolaou N, Nikitina IP, Babanin AI
Materials Science Forum, 338-3, 1017, 2000