검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Co-doping of InxGa1-xAs with silicon and tellurium for improved ultra-low contact resistance Law JJM, Carter AD, Lee S, Huang CY, Lu H, Rodwell MJW, Gossard AC Journal of Crystal Growth, 378, 92, 2013 |
| 2 |
Height-selective etching for regrowth of self-aligned contacts using MBE Burek GJ, Wistey MA, Singisetti U, Nelson A, Thibeault J, Bank SR, Rodwell MJW, Gossard AC Journal of Crystal Growth, 311(7), 1984, 2009 |
| 3 |
Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs Baraskar AK, Wistey MA, Jain V, Singisetti U, Burek G, Thibeault BJ, Lee YJ, Gossard AC, Rodwell MJW Journal of Vacuum Science & Technology B, 27(4), 2036, 2009 |
| 4 |
Regrown-emitter InP heterojunction bisucpolar transistors Kadow C, Gossard AC, Rodwell MJW Journal of Vacuum Science & Technology B, 23(3), 1140, 2005 |
| 5 |
Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy Scott DW, Kadow C, Dong YD, Wei Y, Gossard AC, Rodwell MJW Journal of Crystal Growth, 267(1-2), 35, 2004 |
| 6 |
InP heterojunction bipolar transistor with a selectively implanted collector Dong Y, Wei Y, Griffith Z, Urteaga M, Dahlstrom M, Rodwell MJW Solid-State Electronics, 48(10-11), 1699, 2004 |
| 7 |
InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates using InP metamorphic buffer layer Kim YM, Dahlstrom M, Lee S, Rodwell MJW, Gossard AC Solid-State Electronics, 46(10), 1541, 2002 |