화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Influence of crystal orientation and body doping on trigate transistor performance
Landgraf E, Rosner W, Stadele M, Dreeskornfeld L, Hartwich J, Hofmann F, Kretz J, Lutz T, Luyken RJ, Schulz T, Specht M, Risch L
Solid-State Electronics, 50(1), 38, 2006
2 Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications
Specht M, Reisinger H, Hofmann F, Schulz T, Landgraf E, Luyken RJ, Rosner W, Grieb M, Risch L
Solid-State Electronics, 49(5), 716, 2005
3 NVM based on FinFET device structures
Hofmann F, Specht M, Dorda U, Kommling R, Dreeskornfeld L, Kretz J, Stadele M, Rosner W, Risch L
Solid-State Electronics, 49(11), 1799, 2005
4 Impact of technology parameters on device performance of UTB-SOI CMOS
Schulz T, Pacha C, Luyken RJ, Stadele M, Hartwich J, Dreeskornfeld L, Landgraf E, Kretz J, Rosner W, Specht M, Hofmann F, Risch L
Solid-State Electronics, 48(4), 521, 2004
5 Nanoscale FinFETs for low power applications
Rosner W, Landgraf E, Kretz J, Dreeskornfeld L, Schafer H, Stadele M, Schulz T, Hofmann F, Luyken RJ, Specht M, Hartwich J, Pamler W, Risch L
Solid-State Electronics, 48(10-11), 1819, 2004
6 Design considerations for fully depleted SOI transistors in the 25-50 nm gate length regime
Luyken RJ, Schulz T, Hartwich J, Dreeskornfeld L, Stadele M, Rosner W
Solid-State Electronics, 47(7), 1199, 2003
7 Planar and vertical double gate concepts
Schulz T, Rosner W, Landgraf E, Risch L, Langmann U
Solid-State Electronics, 46(7), 985, 2002