검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Influence of crystal orientation and body doping on trigate transistor performance Landgraf E, Rosner W, Stadele M, Dreeskornfeld L, Hartwich J, Hofmann F, Kretz J, Lutz T, Luyken RJ, Schulz T, Specht M, Risch L Solid-State Electronics, 50(1), 38, 2006 |
| 2 |
NVM based on FinFET device structures Hofmann F, Specht M, Dorda U, Kommling R, Dreeskornfeld L, Kretz J, Stadele M, Rosner W, Risch L Solid-State Electronics, 49(11), 1799, 2005 |
| 3 |
Impact of technology parameters on device performance of UTB-SOI CMOS Schulz T, Pacha C, Luyken RJ, Stadele M, Hartwich J, Dreeskornfeld L, Landgraf E, Kretz J, Rosner W, Specht M, Hofmann F, Risch L Solid-State Electronics, 48(4), 521, 2004 |
| 4 |
Full-band approaches to the electronic properties of nanometer-scale MOS structures Sacconi F, Povolotskyi M, Di Carlo A, Lugli P, Stadele M Solid-State Electronics, 48(4), 575, 2004 |
| 5 |
Nanoscale FinFETs for low power applications Rosner W, Landgraf E, Kretz J, Dreeskornfeld L, Schafer H, Stadele M, Schulz T, Hofmann F, Luyken RJ, Specht M, Hartwich J, Pamler W, Risch L Solid-State Electronics, 48(10-11), 1819, 2004 |
| 6 |
Design considerations for fully depleted SOI transistors in the 25-50 nm gate length regime Luyken RJ, Schulz T, Hartwich J, Dreeskornfeld L, Stadele M, Rosner W Solid-State Electronics, 47(7), 1199, 2003 |
| 7 |
Resonant electron tunneling through defects in ultrathin SiO2 gate oxides in MOSFETs Stadele M, Fischer B, Tuttle BR, Hess K Solid-State Electronics, 46(7), 1027, 2002 |