검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
DC Current-crowding estimation for SiGe:C heterojunction bipolar transistors Ramirez-Garcia E, Garduno-Nolasco E, Rodriguez-Mendez LM, Diaz-Albarran LM, Valdez-Perez D, Galaz-Larios MC, Aniel F, Zerounian N, Enciso-Aguilar MA Solid-State Electronics, 153, 1, 2019 |
| 2 |
Monte Carlo modelling of Schottky diode for rectenna simulation Bernuchon E, Aniel F, Zerounian N, Grimault-Jacquin AS Solid-State Electronics, 135, 71, 2017 |
| 3 |
SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time Ramirez-Garcia E, Michaillat M, Aniel F, Zerounian N, Enciso-Aguilar M, Rideau D Solid-State Electronics, 61(1), 58, 2011 |
| 4 |
Parasitic electrostatic capacitance of high-speed SiGe Heterojunction Bipolar Transistors Zerounian N, Aniel F, Barbalat B, Chevalier P, Chantre A Solid-State Electronics, 53(5), 483, 2009 |
| 5 |
Modelling and measurements of the parasitic electrostatic capacitances in Si/SiGe n-HFET Zerounian N, Enciso-Aguilar M, Hackbarth T, Herzog HJ, Aniel F Solid-State Electronics, 51(3), 449, 2007 |
| 6 |
Microwave performances of silicon heterostructure-FETs Aniel F, Enciso M, Richard S, Giguerre L, Zerounian N, Crozat P, Adde R, Hackbarth T, Herzog JH, Konig U Applied Surface Science, 224(1-4), 370, 2004 |
| 7 |
Strained Si HFETs for microwave applications: state-of-the-art and further approaches Aguilar ME, Rodriguez M, Zerounian N, Aniel F, Hackbarth T, Herzog HJ, Konig U, Mantl S, Hollander B, Chrastina D, Isella G, von Kanel H, Lyutovich K Solid-State Electronics, 48(8), 1443, 2004 |
| 8 |
Transit times of SiGe : C HBTs using nonselective base epitaxy Zerounian N, Rodriguez M, Enciso M, Aniel F, Chevalier P, Martinet B, Chantre A Solid-State Electronics, 48(10-11), 1993, 2004 |