검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Mechanism for the Amorphisation of Diamond Fairchild BA, Rubanov S, Lau DWM, Robinson M, Suarez-Martinez I, Marks N, Greentree AD, McCulloch D, Prawer S Advanced Materials, 24(15), 2024, 2012 |
| 2 |
SiO2 etch rate modification by ion implantation Bellandi E, Soncini V Thin Solid Films, 524, 75, 2012 |
| 3 |
Damage buildup in semiconductors bombarded by low-energy ions Titov AI, Belyakov VS, Azarov AY Thin Solid Films, 515(1), 118, 2006 |
| 4 |
Trench formation on ion implanted SiC surface after thermal oxidation Bahng W, Song GH, Kim NK, Kim SC, Kim HW, Seo KS, Kim ED Materials Science Forum, 483, 777, 2005 |
| 5 |
Nanocalorimeter fabrication procedure and data analysis for investigations on implantation damage annealing Karmouch R, Mercure JF, Schiettekatte F Thermochimica Acta, 432(2), 186, 2005 |
| 6 |
Visible light laser irradiation: A tool for implantation damage reduction Camassel J, Peyre H, Brink DJ, Zielinski M, Blanque S, Mestres N, Godignon P Materials Science Forum, 457-460, 941, 2004 |
| 7 |
Quantitative evaluation of implantation damage and damage recovery after room temperature ion-implantation of N+ and P+ ions in 6H-SiC Blanque S, Perez R, Zielinski M, Pernot J, Mestres N, Pascual J, Godignon P, Camassell J Materials Science Forum, 433-4, 653, 2002 |
| 8 |
Optical characterization of SiC materials: Bulk and implanted layers Camassel J, Vicente P, Falkovski LA Materials Science Forum, 353-356, 335, 2001 |
| 9 |
Infrared investigation of implantation damage and implantation damage annealing in 4H-SiC Pernot J, Bluet JM, Camassel J, Di Cioccio L Materials Science Forum, 353-356, 385, 2001 |
| 10 |
EPR study of proton implantation induced intrinsic defects in 6H-and 4H-SiC von Bardeleben HJ, Cantin JL Materials Science Forum, 353-356, 513, 2001 |