검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
A charge-based model of Junction Barrier Schottky rectifiers Latorre-Rey AD, Mudholkar M, Quddus MT, Salih A Solid-State Electronics, 144, 67, 2018 |
| 2 |
Physics-based modeling and characterization for silicon carbide power diodes McNutt TR, Hefner AR, Mantooth HA, Duliere JL, Berning DW, Singh R Solid-State Electronics, 50(3), 388, 2006 |
| 3 |
1kV 4H-SiC JBS rectifiers fabricated using an AlN capped anneal Zhu L, Shanbhag M, Chow TP, Jones KA, Ervin MH, Shah PB, Derenge MA, Vispute RD, Venkatesan T, Agarwal A Materials Science Forum, 433-4, 843, 2002 |
| 4 |
A high performance JBS rectifier - design considerations Dahlquist F, Lendenmann H, Ostling M Materials Science Forum, 353-356, 683, 2001 |
| 5 |
Design and characterization of 2.5kV 4H-SiC JBS rectifiers with self-aligned guard ring termination Sheridan DC, Merrett JN, Cressler JD, Saddow SE, Williams Jr, Ellis CE, Niu G Materials Science Forum, 353-356, 687, 2001 |
| 6 |
A 2.8kV, forward drop JBS diode with low leakage Dahlquist F, Svedberg JO, Zetterling CM, Ostling M, Breitholtz B, Lendenmann H Materials Science Forum, 338-3, 1179, 2000 |