검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n plus InAs(Si)/p plus GaSb(Si) Esaki diode El Kazzi S, Alian A, Hsu B, Verhulst AS, Walke A, Favia P, Douhard B, Lu W, del Alamo JA, Collaert N, Merckling C Journal of Crystal Growth, 484, 86, 2018 |
| 2 |
A Single-Material Logical Junction Based on 2D Crystal PdS2 Ghorbani-Asl M, Kuc A, Miro P, Heine T Advanced Materials, 28(5), 853, 2016 |
| 3 |
Staggered band gap n+In0.5Ga0.5As/p + GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions El Kazzi S, Smets Q, Ezzedini M, Rooyackers R, Verhulst A, Douhard B, Bender H, Collaert N, Merckling C, Heyns MM, Thean A Journal of Crystal Growth, 424, 62, 2015 |
| 4 |
Study of intrinsically carbon-doped AlGaAs layers for tunnel diodes in multi-junction solar cells Mols Y, Leys MR, Simons E, Poortmans J, Borghs G Journal of Crystal Growth, 298, 758, 2007 |
| 5 |
Application of tunnel diodes as millimeter cascades oscillator systems Kamh SA, Soliman FAS Solid-State Electronics, 48(1), 3, 2004 |
| 6 |
Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current density Pan JL, McManis JE, Grober L, Woodall JM Solid-State Electronics, 48(10-11), 2067, 2004 |
| 7 |
Epitaxial Si-based tunnel diodes Thompson PE, Hobart KD, Twigg ME, Rommel SL, Jin N, Berger PR, Lake R, Seabaugh AC, Chi P Thin Solid Films, 380(1-2), 145, 2000 |
| 8 |
Temperature dependence of current transport in palladium/LB-film/silicon diodes O'Beirn B, Casey V, Gubbins MA, McMonagle JB Thin Solid Films, 327-329, 652, 1998 |