Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.16, No.1 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (57 articles)

1 - 5	Role of hydrogen during rapid vapor-phase doping analyzed by x-ray photoelectron spectroscopy and Fourier-transform infrared-attenuated total reflection Kiyota Y, Yano F, Suzuki S, Inada T
6 - 12	Adhesion improvement of plasma-deposited silica thin films on stainless steel substrate studied by x-ray photoemission spectroscopy and in situ infrared ellipsometry Bertrand N, Drevillon B, Gheorghiu A, Senemaud C, Martinu L, Klemberg-Sapieha JE
13 - 20	Interactions of evaporated aluminum atoms with polyaniline films : An x-ray photoelectron spectroscopic study Lim SL, Tan KL, Kang ET
21 - 29	Multicomponent surface analysis system combined with high pressure reaction cells for studying metal oxide model catalysts Weiss W, Ritter M, Zscherpel D, Swoboda M, Schlogl R
30 - 34	Interactions of low-energy (20-800 eV) nitrogen ions with Cu(100) : A combined temperature programmed desorption and electron energy loss spectroscopy study of chemisorption and entrapment states Yu H, Leung KT
35 - 44	X-ray photoelectron spectroscopy and scanning electron microscopy characterization of novel poly(monosubstituted) acetylenes containing doping species Russo MV, Polzonetti G, Furlani A, Bearzotti A, Fratoddi I, Altamura P
45 - 49	Real-time observation of VO2 thin films in phase transition by laser scanning microscopy Nagashima M, Wada H
50 - 56	Optical properties of low-density foams considered as targets for inertial confinement fusion Glembocki OJ, Rebbert ML, Prokes SM, Sethian JD, Marrian CRK, Chan LY
57 - 62	Comparison of Si/SiO2 interface roughness from electron cyclotron resonance plasma and thermal oxidation Zhao C, Hu YZ, Labayen T, Lai L, Irene EA
63 - 71	In situ infrared ellipsometry study of the growth of plasma deposited silica thin films Bertrand N, Drevillon B, Bulkin P
72 - 77	Vacuum ultraviolet to visible emission of some pure gases and their mixtures used for plasma processing Fozza AC, Kruse A, Hollander A, Ricard A, Wertheimer MR
78 - 86	Investigation of a SF6 helicon plasma Chabert P, Boswell RW, Davis C
87 - 95	Polymerization of fluorocarbons in reactive ion etching plasmas Stoffels WW, Stoffels E, Tachibana K
96 - 99	Etching of GaAs/AlGaAs by bisdimethylaminochlorarsine Okamoto N, Tanaka H
100 - 107	Studies of the low-pressure inductively-coupled plasma etching for a larger area wafer using plasma modeling and Langmuir probe Collison WZ, Ni TQ, Barnes MS
108 - 113	Deposition polymerization of polyurea thin films by ionization-assisted method Usui H, Kikuchi H, Tanaka K, Miyata S, Watanabe T
114 - 122	Ion-molecule-reaction mass spectrometer for on-line gas analysis Bassi D, Tosi P, Schlogl R
123 - 130	Thermal chemistry of biacetyl on Si(100) Armstrong JL, Pylant ED, White JM
131 - 138	In situ conductivity characterization of oxide thin film growth phenomena on microhotplates DiMeo F, Cavicchi RE, Semancik S, Suehle JS, Tea NH, Small J, Armstrong JT, Kelliher JT
139 - 144	Hydrazine cyanurate as a nitrogen source for thin nitride film growth Kropewnicki TJ, Kohl PA
145 - 147	Simple method for the control of substrate ion fluxes using an unbalanced magnetron Telling ND, Petty M, Crapper MD
148 - 154	Nonevaporable getter films for ultrahigh vacuum applications Benvenuti C, Chiggiato P, Cicoira F, L'Aminot Y
155 - 162	Interface formation between metals (Cu, Ti) and low dielectric constant organic polymer (FLARE (TM) 1.0) Du M, Opila RL, Case C
163 - 168	Surface morphology of ex situ sulfur-passivated (1x1) and (2x1) InP(100) surfaces Qin XR, Lu ZH, Shapter JG, Coatsworth LL, Griffiths K, Norton PR
169 - 174	Piezoelectric properties of sputtered PbTiO3 films : Growth temperature and poling treatment effects Cattan E, Jaber B, Tronc P, Remiens D, Thierry B
175 - 180	Empirical and numerical calculations in two dimensions for predicting the performance of a single stage turbomolecular pump Schneider TN, Katsimichas S, de Oliveira CRE, Goddard AJH
181 - 187	Highly reliable fitting for gas delivery systems Ikeda N, Shirai Y, Ohmi T, Yamaji M
188 - 193	Air bake-out to reduce hydrogen outgassing from stainless steel Bernardini M, Braccini S, De Salvo R, Di Virgilio A, Gaddi A, Gennai A, Genuini G, Giazotto A, Losurdo G, Pan HB, Pasqualetti A, Passuello D, Popolizio P, Raffaelli F, Torelli G, Zhang Z, Bradaschia C, Del Fabbro R, Ferrante I, Fidecaro F, La Penna P, Mancini S, Poggiani R, Narducci P, Solina A, Valentini R
194 - 199	Computation of time-dependent temperature distribution along a filament heated in vacuo by electric pulses Durakiewicz T, Halas S
200 - 202	Characterization of thin, transparent and conductive TiN films prepared by radio frequency sputtering Kawamura M, Abe Y, Sasaki K
203 - 206	Filtered saddle field fast atom beam deposition of diamondlike carbon films Sarangi D, Panwar OS, Kumar S, Dixit PN, Bhattacharyya R
207 - 207	Low-temperature (< 450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997) Wolfe DM, Wang F, Habermehl S, Lucovsky G
207 - 207	Early nitriding stage of evaporated-Ti thin films by N-ion implantation (vol 15, pg 1848, 1997) Kasukabe Y, Takeda S, Fujino Y, Yamada Y, Nagata S, Kishimoto M, Yamaguchi S
215 - 215	Papers from the International Workshop on Basic Aspects of Nonequilibrium Plasmas Interacting with Surfaces (BANPIS '97) -26-27 January 1997, Nanki Seaside Lodge Shirahama, Wakayama, Japan - Preface Makabe T, Garscadden A
217 - 224	Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon Chang JP, Mahorowala AP, Sawin HH
225 - 232	Investigations of the surface chemistry of silicon substrates etched in a rf-biased inductively coupled fluorocarbon plasma using Fourier-transform infrared ellipsometry Kroesen GMW, Lee HJ, Moriguchi H, Motomura H, Shirafuji T, Tachibana K
233 - 238	Surface reaction of CF2 radicals for fluorocarbon film formation in SiO2/Si selective etching process Inayoshi M, Ito M, Hori M, Goto T, Hiramatsu M
239 - 249	High density fluorocarbon etching of silicon in an inductively coupled plasma : Mechanism of etching through a thick steady state fluorocarbon layer Standaert TEFM, Schaepkens M, Rueger NR, Sebel PGM, Oehrlein GS, Cook JM
250 - 259	Near-surface interactions and their etching-reaction model in metal plasma-assisted etching Tachi S, Izawa M, Tsujimoto K, Kure T, Kofuji N, Suzuki K, Hamasaki R, Kojima M
260 - 264	Plasma process induced surface damage removal Brooks CB, Buie MJ, Vaidya KJ
265 - 269	Dynamical aspect of Cl-2 reaction on Si surfaces Doshita H, Ohtani K, Namiki A
270 - 277	The recombination of chlorine atoms at surfaces Kota GP, Coburn JW, Graves DB
278 - 289	Surface reaction probabilities and kinetics of H, SiH3, Si2H5, CH3, and C2H5 during deposition of a-Si : H and a-C : H from H-2, SiH4, and CH2 discharges Perrin J, Shiratani M, Kae-Nune P, Videlot H, Jolly J, Guillon J
290 - 293	Observation of surface dissociation of low-energy polyatomic ions relevant to plasma processing Sugai H, Mitsuoka Y, Toyoda H
294 - 299	Electron transport to a substrate in a radio frequency capacitively coupled plasma by the Boltzmann equation Matsui J, Shibata M, Nakano N, Makabe T
300 - 305	Kinetic modeling of the charging of nonconducting walls in a low pressure radio frequency inductively coupled plasma Kortshagen U
306 - 315	Investigations in the sheath region of a radio frequency biased inductively coupled discharge Benck EC, Schwabedissen A, Gates A, Roberts JR
316 - 323	Multiterm solution of the reactive space-time-dependent Boltzmann equation White RD, Robson RE, Ness KF
324 - 328	Parallel computing and the generation of basic plasma data McKoy V, Winstead C, Lee CH
329 - 336	The role of heavy particles in kinetics of low current discharges in argon at high electric field to gas number density ratio Petrovic ZL, Stojanovic VD
337 - 340	C-2 column densities in H-2/Ar/CH4 microwave plasmas Goyette AN, Matsuda Y, Anderson LW, Lawler JE
341 - 344	Plasma research activities in the association of super-advanced electronics technologies Inoue M, Ishitani A, Samukawa S, Sekine M
345 - 355	Reaction of the fluorine atom and molecule with the hydrogen-terminated Si(111) surface Morikawa Y, Kubota K, Ogawa H, Ichiki T, Tachibana A, Fujimura S, Horiike Y
356 - 364	Monolayer incorporation of nitrogen at Si-SiO2 interfaces : Interface characterization and electrical properties Lucovsky G
365 - 368	Plasma and surface reactions for obtaining low defect density amorphous silicon at high growth rates Matsuda A
369 - 374	Characteristics of a mesh-bias-controlled electron cyclotron resonance plasma for the growth of gallium nitride epitaxial films Yasui K, Iizuka K, Akahane T
375 - 381	Analysis of native oxide growth process on an atomically flattened and hydrogen terminated Si (111) surface in pure water using Fourier transformed infrared reflection absorption spectroscopy Fujimura S, Ishikawa K, Ogawa H