1 - 6 |
Crystallisation and electrical resistivity of sputter-deposited aluminium-germanium alloy films Boogard A, van den Broek JJ |
7 - 34 |
The growth and structure of epitaxial niobium on sapphire Wildes AR, Mayer J, Theis-Brohl K |
35 - 38 |
Cadmium telluride thin films: growth from solution and characteristics Patil VB, Sutrave DS, Shahane GS, Deshmukh LP |
39 - 44 |
Pressure-dependence of etch rate in O-2 discharges Kim MT |
45 - 51 |
FTIR investigations of tungsten oxide electrochromic films derived from organically modified peroxotungstic acid precursors Sharma N, Deepa M, Varshney P, Agnihotry SA |
52 - 59 |
Effect of the composition and thermal annealing on the transformation temperatures of sputtered TiNi shape memory alloy thin films Surbled P, Clerc C, Le Pioufle B, Ataka M, Fujita H |
60 - 66 |
Metal-organic chemical vapor deposition growth of GaN thin film on 3C-SiC/Si(111) substrate using various buffer layers Park CI, Kang JH, Kim KC, Nahm KS, Suh EK, Lim KY |
67 - 72 |
Effect of antiferroelectric buffer on electric fatigue and leakage in ferroelectric Pb(Zr,Sn,Ti)NbO3 thin films Jang JH, Yoon KH |
73 - 76 |
Formation of'environmentally friendly' semiconductor (beta-FeSi2) thin films prepared by ion beam sputter deposition (IBSD) method Sasase M, Nakanoya T, Yamamoto H, Hojou K |
77 - 83 |
Micro-defects produced on a substrate by a glow discharge and the role of such defects on diamond nucleation Wang BB, Wang WL, Liao KJ |
84 - 87 |
High rate deposition and electron beam recrystallization of silicon films for solar cells Rostalsky M, Muller J |
88 - 93 |
Preparation of epitaxial TiO2 films by pulsed laser deposition technique Yamamoto S, Sumita T, Sugiharuto, Miyashita A, Naramoto H |
94 - 101 |
Nanocrystalline silicon carbonitride thin films prepared by plasma beam-assisted deposition Cao ZX |
102 - 105 |
Thin Au film with highly ordered arrays of hemispherical dots Gao T, Fan JC, Meng GW, Chu ZQ, Zhang LD |
106 - 110 |
Effect of nitrogen ion implantation on the microstructural transformation of boron film Tian JZ, Xia LF, Zhang HD, Lee SR, Lu FX, Tang WH |
111 - 117 |
Synthesis and properties of novel electroluminescent oligomers containing carbazolylene-vinylene-sulfonylene units for a light-emitting diode Jung HK, Lee CL, Lee JK, Kim JK, Park SY, Kim JJ |
118 - 123 |
Photoluminescence of TiO2: Eu3+ thin films obtained by sol-gel on Si and Corning glass substrates Palomino-Merino R, Conde-Gallardo A, Garcia-Rocha M, Hernandez-Calderon I, Castano V, Rodriguez R |
124 - 130 |
Formation of TiO2 thin films by hydrolysis of Ti-tetraethoxide in ethanol: kinetics, surface morphology, constituent phases and their formation mechanism Okudera H, Yokogawa Y |
131 - 137 |
Self-assembly of organometallic clusters onto the surface of gold Guzman-Jimenez IY, Whitmire KH, Umezama-Vizzini K, Colorado R, Do JW, Jacobson A, Lee TR, Hong SH, Mirkin CA |
138 - 144 |
Formation mechanism for TiOx thin film obtained by remote plasma enhanced chemical vapor deposition in H-2-O-2 mixture gas plasma Nakamura M, Kato S, Aoki T, Sirghi L, Hatanaka Y |
145 - 149 |
Structural and optical characterization of nanocrystals of the InAs-InP system embedded in amorphous SiO2 thin films Zheng MJ, Zhang LD, Yang L, Li GH |
150 - 158 |
Synthesis of SiO2 and SiOxCyHz thin films by microwave plasma CVD Barranco A, Cotrino J, Yubero F, Espinos JP, Benitez J, Clerc C, Gonzalez-Elipe AR |
159 - 164 |
Molecular dynamics simulations of an Al2O3(0001 +/-, 0-10(II))/CeO2 (011 +/-,01-1(II)) interface system Baudin M, Wojcik M, Hermansson K |
165 - 170 |
Surface smoothing and roughening in sputtered SnO2 films Lindstrom T, Isidorsson J, Niklasson GA |
171 - 178 |
Effect of molecular adsorption at the liquid-metal interface on electronic conductivity: the role of surface morphology Fried GA, Zhang YM, Bohn PW |
179 - 186 |
Low stress TiB2 coatings with improved tribological properties Berger M, Karlsson L, Larsson M, Hogmark S |
187 - 195 |
Growth and structural characterization of yttria-stabilized zirconia-gold nanocomposite films with improved toughness Voevodin AA, Hu JJ, Jones JG, Fitz TA, Zabinski JS |
196 - 202 |
Depth-sensitive analysis of a degraded tin oxide electrode surface in a plasma device application Lemoine P, Mariotti D, Maguire P, McLaughlin JA |
203 - 210 |
A new technique to measure through film thickness fracture toughness Tsui TY, Joo YC |
211 - 215 |
Electrochromic properties of rhodium oxide films prepared by a sol-gel method Wang HH, Yan MM, Jiang ZY |
216 - 224 |
Optical characterisation of anatase: a comparative study of the bulk crystal and the polycrystalline thin film Viseu TMR, Almeida B, Stchakovsky M, Drevillon B, Ferreira MIC, Sousa JB |
225 - 228 |
Spontaneous and stimulated emission in ZnCdTe-ZnTe quantum wells grown by LP-MOCVD Shan CX, Fan XW, Zhang JY, Zhang ZZ, Lu YM, Liu YC, Shen DZ |
229 - 234 |
Effect of the deposition geometry on the electrical properties within Tin-doped indium oxide film deposited under a given RF magnetron sputtering condition You DJ, Choi SK, Han HS, Lee JS, Lim CB |
235 - 242 |
Polycrystalline silicon thin films for microsystems: correlation between technological parameters, film structure and electrical properties Michelutti L, Chovet A, Stoemenos J, Terrot JM, Ionescu MA |
243 - 250 |
Polyethersulfone foils as stable transparent substrates for conductive copper sulfide thin film coatings Nair PK, Cardoso J, Daza OG, Nair MTS |
251 - 254 |
A blue organic emitting diode from anthracene derivative Jiang XY, Zhang ZL, Zheng XY, Wu YZ, Xu SH |
255 - 266 |
Effects of corner position and operating condition on electromigration failure in angled bamboo lines without passivation layer Sasagawa K, Hasegawa M, Naito K, Saka M, Abe H |
267 - 272 |
Three-dimensional structure of the copper porphyrazine layers at the air-water interface Valkova L, Borovkov N, Pisani M, Rustichelli F |
273 - 278 |
Surface condition effects of the inter-metal dielectrics on interconnect aluminum film properties Kim SD, Rhee JK, Hwang IS, Park HM, Park HC |
279 - 283 |
Silicon behavior in GaN grown by radiofrequency plasma molecular beam epitaxy Li W, Li AZ |
284 - 290 |
Spectroscopic impedance studies of Al2O3 films deposited by spray pyrolysis Huanosta A, Alonso JC, Ortiz A |
291 - 297 |
Residual stress and thermal expansion behavior of TaOxNy films by the micro-cantilever method Jong CA, Chin TS, Fang WL |
298 - 305 |
In situ resistivity study of copper-cobalt films: precipitation, dissolution and phase transformation Zhang SL, Harper JME, Cabral C, d'Heurle FM |
306 - 309 |
Lattice-mismatch induced-stress in porous silicon films Manotas S, Agullo-Rueda F, Moreno JD, Ben-Hander F, Martinez-Duart JM |