1 - 7 |
Synthesis and characterization of indium monoselenide nanosheets: A proposed pseudo top-down mechanism Airo MA, Gqoba S, Kalenga MP, Govindraju S, Moloto MJ, Moloto N |
8 - 11 |
The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants Sarney WL, Svensson SP, Anderson EM, Lundquist AM, Pearson C, Millunchick JM |
12 - 17 |
Simple and rapid green synthesis of micrometer scale single crystalline gold nanoplates using chitosan as the reducing agent Alex S, Tian K, Teng S, Siegel G, Tiwari A |
18 - 25 |
Exploration of crystal simulation potential by fluconazole isomorphism and its application in improvement of pharmaceutical properties Thakur A, Kumar D, Thipparaboina R, Shastri NR |
26 - 30 |
Structural properties of ZnO nanowires directly grown on a carbon film in ZnCl2 aqueous solution Choi HW, Theodore ND, Das S, Dhar A, Alford TL |
31 - 35 |
Crystal growth, optical and scintillation properties of Nd3+ doped GdTaO4 single crystal Peng F, Liu WP, Zhang QL, Yang HJ, Shi CS, Mao RH, Sun DL, Luo JQ, Sun GH |
36 - 40 |
MBE growth of germanium nanowires along < 1 1 0 > Schmidtbauer J, Bansen R, Heimburger R, Teubner T, Boeck T |
41 - 47 |
Graphene mediated growth of polycrystalline indium phosphide nanowires and monocrystalline-core, polycrystalline-shell silicon nanowires on copper Norris KJ, Garrett M, Coleman E, Tompa GS, Zhang J, Kobayashi NP |
48 - 52 |
Evaluation of the difficulty of crystallization of organic compounds using the critical supersaturation ratio (S-C) Nagamatsu D, Ida Y, Takiyama H |
53 - 58 |
Numerical simulation of the gallium nitride thin film layer grown on 6-inch wafer by commercial multi-wafer hydride vapor phase epitaxy Han XF, Hur MJ, Lee JH, Lee YJ, Oh CS, Yi KW |
59 - 67 |
Thin interface analysis of a phase-field model for epitaxial growth with nucleation and Ehrlich-Schwoebel effects Dong XL, Xing H, Chen CL, Luo BC, Chen Z, Zhang RL, Jin KX |
68 - 71 |
Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots Kim Y, Ban KY, Kuciauskas D, Dippo PC, Honsberg CB |
72 - 77 |
Defect structure of a free standing GaN wafer grown by the ammonothermal method Sintonen S, Suihkonen S, Jussila H, Lipsanen H, Tuomi TO, Letts E, Hoff S, Hashimoto T |
78 - 84 |
Partitioning of ionic species during growth of impurity-doped lithium niobate by electric current injection Nozawa J, Iida S, Koyama C, Maeda K, Fujiwara K, Koizumi H, Uda S |
85 - 93 |
Anisotropic solid-liquid interfacial energy measurement by grain boundary groove method Wang LL, Lin X, Wang M, Huang WD |
94 - 103 |
Shape evolution of decahedral and icosahedral Ag flags and their intermediates from Ag nanorod seeds in DMF solution in the presence of polyvinylpyrrolidone Tsuji M, Nakamura N, Tang XL, Uto K, Matsunaga M |
104 - 110 |
Single-crystalline Bi2Te3 nanosheets with uniform morphology via a simple, efficient, and high-yield microwave-assisted synthesis Li ZL, Teng RY, Zheng SQ, Zhang YZ, Huang T, Lu GW |
111 - 115 |
Crystallographic dependent in-situ CBr4 selective nano-area etching and local regrowth of InP/InGaAs by MOVPE Kuznetsova N, Kulkova IV, Semenova ES, Kadhodazadeh S, Kryzhanovskaya NV, EZhukov A, Yvind K |