화학공학소재연구정보센터

Journal of Crystal Growth

Journal of Crystal Growth, Vol.406 Entire volume, number list
ISSN: 0022-0248 (Print) 

In this Issue (18 articles)

1 - 7 Synthesis and characterization of indium monoselenide nanosheets: A proposed pseudo top-down mechanism
Airo MA, Gqoba S, Kalenga MP, Govindraju S, Moloto MJ, Moloto N
8 - 11 The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants
Sarney WL, Svensson SP, Anderson EM, Lundquist AM, Pearson C, Millunchick JM
12 - 17 Simple and rapid green synthesis of micrometer scale single crystalline gold nanoplates using chitosan as the reducing agent
Alex S, Tian K, Teng S, Siegel G, Tiwari A
18 - 25 Exploration of crystal simulation potential by fluconazole isomorphism and its application in improvement of pharmaceutical properties
Thakur A, Kumar D, Thipparaboina R, Shastri NR
26 - 30 Structural properties of ZnO nanowires directly grown on a carbon film in ZnCl2 aqueous solution
Choi HW, Theodore ND, Das S, Dhar A, Alford TL
31 - 35 Crystal growth, optical and scintillation properties of Nd3+ doped GdTaO4 single crystal
Peng F, Liu WP, Zhang QL, Yang HJ, Shi CS, Mao RH, Sun DL, Luo JQ, Sun GH
36 - 40 MBE growth of germanium nanowires along < 1 1 0 >
Schmidtbauer J, Bansen R, Heimburger R, Teubner T, Boeck T
41 - 47 Graphene mediated growth of polycrystalline indium phosphide nanowires and monocrystalline-core, polycrystalline-shell silicon nanowires on copper
Norris KJ, Garrett M, Coleman E, Tompa GS, Zhang J, Kobayashi NP
48 - 52 Evaluation of the difficulty of crystallization of organic compounds using the critical supersaturation ratio (S-C)
Nagamatsu D, Ida Y, Takiyama H
53 - 58 Numerical simulation of the gallium nitride thin film layer grown on 6-inch wafer by commercial multi-wafer hydride vapor phase epitaxy
Han XF, Hur MJ, Lee JH, Lee YJ, Oh CS, Yi KW
59 - 67 Thin interface analysis of a phase-field model for epitaxial growth with nucleation and Ehrlich-Schwoebel effects
Dong XL, Xing H, Chen CL, Luo BC, Chen Z, Zhang RL, Jin KX
68 - 71 Effect of silicon delta-doping density on optical properties of type-II InAs/GaAsSb quantum dots
Kim Y, Ban KY, Kuciauskas D, Dippo PC, Honsberg CB
72 - 77 Defect structure of a free standing GaN wafer grown by the ammonothermal method
Sintonen S, Suihkonen S, Jussila H, Lipsanen H, Tuomi TO, Letts E, Hoff S, Hashimoto T
78 - 84 Partitioning of ionic species during growth of impurity-doped lithium niobate by electric current injection
Nozawa J, Iida S, Koyama C, Maeda K, Fujiwara K, Koizumi H, Uda S
85 - 93 Anisotropic solid-liquid interfacial energy measurement by grain boundary groove method
Wang LL, Lin X, Wang M, Huang WD
94 - 103 Shape evolution of decahedral and icosahedral Ag flags and their intermediates from Ag nanorod seeds in DMF solution in the presence of polyvinylpyrrolidone
Tsuji M, Nakamura N, Tang XL, Uto K, Matsunaga M
104 - 110 Single-crystalline Bi2Te3 nanosheets with uniform morphology via a simple, efficient, and high-yield microwave-assisted synthesis
Li ZL, Teng RY, Zheng SQ, Zhang YZ, Huang T, Lu GW
111 - 115 Crystallographic dependent in-situ CBr4 selective nano-area etching and local regrowth of InP/InGaAs by MOVPE
Kuznetsova N, Kulkova IV, Semenova ES, Kadhodazadeh S, Kryzhanovskaya NV, EZhukov A, Yvind K