2955 - 2959 |
Exploration of Ba3N2 flux for GaN single-crystal growth Bao HQ, Li H, Wang G, Song B, Wang WJ, Chen XL |
2960 - 2965 |
Role of thermal expansion matching in CdTe heteroepitaxy on highly lattice-mismatched substrates Jacobs RN, Markunas J, Pellegrino J, Almeida LA, Groenert M, Jaime-Vasquez M, Mahadik N, Andrews C, Qadri SB |
2966 - 2969 |
InP nanostructures formed in GaP-based nanowires grown on Si(111) substrates Tateno K, Zhang G, Nakano H |
2970 - 2976 |
Development of oxygen transport model in Czochralski growth of silicon crystals Smirnov AD, Kalaev VV |
2977 - 2980 |
Microstructural properties and atomic arrangements of GaN nanorods grown on Si (111) substrates by using hydride vapor phase epitaxy Lee KH, Kwon YH, Ryu SY, Kang TW, Jung JH, Lee DU, Kim TW |
2981 - 2986 |
Structural characterization of non-polar (11(2)under-bar-0) and semi-polar (11(2)under-bar-6) GaN films grown on r-plane sapphire Zhou L, Chandrasekaran R, Moustakas TD, Smith DJ |
2987 - 2994 |
Reaction kinetics of CuGaSe2 formation from a GaSe/CuSe bilayer precursor film Kim WK, Payzant EA, Kim S, Speakman SA, Crisalle OD, Anderson TJ |
2995 - 2998 |
Structural, ferroelectric, ferromagnetic, and magnetoelectric properties of the lead-free Bi3.15Nd0.85Ti3O12/CoFe2O4 double-layered thin film Zhong XL, Liao M, Wang JB, Xie SH, Zhou YC |
2999 - 3003 |
Formation of InAs1-xSbx quantum dots on vicincal InP(001) for 1.55-mu m DFB laser applications Kawaguchi K, Matsuda M, Ekawa M, Yamamoto T, Kuwatsuka H, Sugawara M, Arakawa Y |
3004 - 3008 |
Compositional analysis of In-rich InGaN layers grown on GaN templates by metalorganic chemical vapor deposition Kim HJ, Shin Y, Kwon SY, Kim HJ, Choi S, Hong S, Kim CS, Yoon JW, Cheong H, Yoon E |
3009 - 3013 |
The growth of ZnO crystals from the melt Klimm D, Ganschow S, Schulz D, Fornari R |
3014 - 3018 |
Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE Gelczuk L, Serafinczuk J, Darowska-Szata M, Dluzewski P |
3019 - 3023 |
Band gap engineering of ZnO thin films by In2O3 incorporation Gupta RK, Ghosh K, Patel R, Mishra SR, Kahol PK |
3024 - 3028 |
Optical and structural characteristics of ZnO films grown on (0001) sapphire substrates by ALD using DEZn and N2O Lin PY, Gong JR, Li PC, Lin TY, Lyu DY, Lin DY, Lin HJ, Li TC, Chang KJ, Lin WJ |
3029 - 3033 |
Effects of LaNiO3 buffer layer on the structures and properties of La0.7Sr0.3MnO3 thin films Wang T, Fang XD, Dong WW, Tao RH, Deng ZH, Li D, Zhao YP, Meng G, Zhou S, Zhu XB |
3034 - 3041 |
Effect of solution speciation of impurities on alpha-glycine crystal habit: A molecular modeling study Poornachary SK, Chow PS, Tan RBH |
3042 - 3048 |
Reactor-scale profile of group-V composition of InGaAsP studied by fluid dynamics simulation and in situ analysis of surface kinetics Onitsuka R, Sugiyama M, Shimogaki Y, Nakano Y |
3049 - 3054 |
Construction of coral-like complex: Controlled growth of vaterite submicron hairs on flat films and hemispheres Xu XR, Liu R, Pan HH, Tang RK, Cho K |
3055 - 3061 |
From cerium oxycarbonate to nanostructured ceria: Relations between synthesis, thermal process and morphologies Bakiz B, Guinneton F, Dallas JP, Villain S, Gavarri JR |
3062 - 3066 |
Properties and characterization of Cu3SbS3 nanowires synthesized by solvothermal route Wang MX, Yue GH, Fan XY, Yan PX |
3067 - 3071 |
Effect of solvent and molecular structure on the crystallization of polymorphs of BPT esters Kitamura M, Hayashi Y, Hara T |
3072 - 3076 |
Synthesis and characterizations of size-controlled FeNi3 nanoplatelets Wang HZ, Li JG, Kou XL, Zhang L |
3077 - 3083 |
PtTe2: Potential new material for the growth of defect-free TeO2 single crystals Mangin J, Veber P |
3084 - 3092 |
Equilibrium strain-energy analysis of coherently strained core-shell nanowires Trammell TE, Zhang X, Li YL, Chen LQ, Dickey EC |
3093 - 3096 |
Stranski-Krastanow (SK) growth mode of layered gamma-Na0.7CoO2 on (111) SrTiO3 substrate Son JY, Cho JH |
3097 - 3106 |
Numerical investigations of geometric effects on flow and thermal fields in a horizontal CVD reactor Cheng TS, Hsiao MC |
3107 - 3112 |
Numerical study of heat transport and fluid flow during different stages of sapphire Czochralski crystal growth Tavakoli MH |
3113 - 3116 |
Lithographically defined carbon growth templates for ELOG of GaN Burckel DB, Fan HY, Thaler G, Koleske DD |
3117 - 3120 |
Luminescent properties of Eu3+-doped La2Mo2O9 red phosphor by the flux method Li X, Yang ZP, Guan L, Liu C, Li PL |
3121 - 3124 |
Microfluidic screening of potassium nitrate polymorphism Laval P, Giroux C, Leng J, Salmon JB |
3125 - 3130 |
Cupric oxide nanoflowers synthesized with a simple solution route and their field emission Yu LG, Zhang GM, Wu Y, Bai X, Guo DZ |
3131 - 3134 |
Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure Garcia R, Thomas AC, Ponce FA |