435 - 435 |
The Proceedings of the 4th International Asian Conference on Crystal Growth and Crystal Technology (CGTC-4) Tohoku University, Sendai, Japan 21-24 May, 2008 Preface Nakajima K, Fujioka H, Smith RL |
436 - 439 |
Optical properties and dye adsorption characteristics of acicular crystal assembled TiO2 thin films Masuda Y, Kato K |
440 - 442 |
Solution growth of GaN on sapphire substrate under nitrogen plasma Ozawa T, Dohi M, Matsuura T, Hayakawa Y |
443 - 447 |
Hydrothermal growth of Ti:sapphire (Ti3+: Al2O3) laser crystals Wang BG, Bliss DF, Callahan MJ |
448 - 451 |
Growth behavior of nonpolar GaN on the nearly lattice-matched (100) gamma-LiAlO2 substrate by chemical vapor deposition Chou MMC, Chang LW, Chen CL, Yang WF, Li CA, Wu JJ |
452 - 455 |
Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE Hang DR, Chou MMC, Chang L, Dikme Y, Heuken M |
456 - 458 |
Growth and in-plane optical anisotropy of crystalline quality enhanced non-polar m-plane ZnO(GaN) films on trenched (100) LiAlO2 substrates Lin H, Zhou SM, Teng H, Wang J |
459 - 462 |
Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target Vashaei Z, Aikawa T, Ohtsuka M, Kobatake H, Fukuyama H, Ikeda S, Takada K |
463 - 465 |
Monte Carlo simulation of atomic arrangement in InGaN thin film grown by MOVPE Kangawa Y, Kakimoto K, Ito T, Koukitu A |
466 - 469 |
The effect of growth temperature on nitrogen incorporation into ZnO film grown on Al2O3 substrate Park SH, Minegishi T, Ito M, Park JS, Im IH, Chang JH, Oh DC, Ko HJ, Cho MW, Yao T |
470 - 473 |
Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer Lee HJ, Ha JS, Lee HJ, Lee SW, Lee SH, Goto H, Hong SK, Cho MW, Yao T, Fujito K, Shimoyama K, Namita H, Nagao S |
474 - 477 |
Growth behavior of AlInGaN films Shang JZ, Zhang BP, Mao MH, Cai LE, Zhang JY, Fang ZL, Liu BL, Yu JZ, Wang QM, Kusakabe K, Ohkawa K |
478 - 481 |
Design and epitaxy of structural III-nitrides Li JC, Lin W, Yang WH, Cai WZ, Pan QF, Lin XJ, Li SP, Chen HY, Liu DY, Cai JF, Yu X, Kang JY |
482 - 485 |
Selectively dissolution-recrystallization of ZnO crystals at the air-liquid interface Hu XL, Masuda Y, Ohji T, Kato K |
486 - 489 |
Synthesis and characterization of TMA-A zeolite nanocrystals incorporating ZnO nanoclusters Lim CS, Ryu JH |
490 - 494 |
Synthesis and properties of triangular-shaped GaN nanorods via growth mode control Kang SM, Shin TI, Dihn DV, Yang JH, Kim SW, Yoon DH |
495 - 499 |
Synthesis and field emission properties of triangular-shaped GaN nanowires on Si(100) substrates Dinh DV, Kang SM, Yang JH, Kim SW, Yoon DH |
500 - 503 |
Solvothermal synthesis of CuS semiconductor hollow spheres based on a bubble template route Liu J, Xue DF |
504 - 507 |
Mass production and characterization of free-standing ZnO nanotripods by thermal chemical vapor deposition Choi MY, Park HK, Jin MJ, Yoon DH, Kim SW |
508 - 511 |
Sonochemical deposition of nanosized Au on titanium oxides with different surface coverage and their photocatalytic activity Yang D, Park SE, Lee JK, Lee SW |
512 - 517 |
Acicular crystal-assembled TiO2 thin films and their deposition mechanism Masuda Y, Kato K |
518 - 521 |
Growth of shaped 12CaO x 7Al(2)O(3) crystals by the micro-pulling down method Liu LJ, Kagamitani YJ, Ehrentraut D, Yokoyama C, Fukuda T |
522 - 525 |
Crystal growth and characterization of ytterbium garnet and holmium garnet using the Fz technique Kimura H, Tanahashi R, Maiwa K, Morinaga R, Sato TJ |
526 - 529 |
Crystal growth and structural characterizations of Ce-doped Gd-9.33(SiO4)(6)O-2 single crystals Ohgi Y, Kagi H, Arima H, Ohta A, Kamada K, Yoshikawa A, Sugiyama K |
530 - 533 |
Growth and scintillation properties of cerium doped lutetium scandium borate single crystals Hatamoto SI, Yamazaki T, Hasegawa J, Katsurayama M, Oshika M, Anzai Y |
534 - 536 |
Growth of oxide compounds under dynamic atmosphere composition Klimm D, Ganschow S, Schulz D, Bertram R, Uecker R, Reiche R, Fornari R |
537 - 540 |
Crystal growth and scintillation properties of YAlO3:Pr co-doped with Mo3+ and Ga3+ ions Zhuravleva M, Novoselov A, Nikl M, Pejchal J, Ogino H, Yoshikawa A |
541 - 543 |
Flux growth of yttrium calcium oxy borate (YCOB) single crystals for nonlinear optical applications Kumar RA, Dhanasekaran R |
544 - 547 |
Unidirectional growth of largest L-LMHCl dihydrate crystal by SR method Senthil A, Babu RR, Balamurugan N, Ramasamy P |
548 - 552 |
Influence of micro-impurity on protein crystal growth studied by the etch figure method Dai GL, Liu XY, Sazaki G, Zhang XG |
553 - 555 |
Stopped-flow analysis on the mechanism of perylene nanoparticle formation by the reprecipitation method Mori J, Miyashita Y, Oliveira D, Kasai H, Oikawa H, Nakanishi H |
556 - 559 |
Melt growth rate and growth shape of Isotactic polybutene-1 tetragonal crystals Yamashita M |
560 - 563 |
Crystal growth kinetics and morphology of isotactic polybutene-1 trigonal phase in the melt Yamashita M |
564 - 567 |
Crystal thickness of melt-grown isotactic polybutene-1 tetragonal phase Yamashita M |
568 - 571 |
Development of DAST-derivative crystals for terahertz waves generation Matsukawa T, Takahashi Y, Miyabara R, Koga H, Umezawa H, Kawayama I, Yoshimura M, Okada S, Tonouchi M, Kitaoka Y, Mori Y, Sasaki T |
572 - 575 |
Growth aspects and characteristic properties of pure and Li-doped L-arginine acetate (LAA) single crystals: A promising nonlinear optical material Natarajan V, Arivanandhan M, Sankaranarayanan K, Ramasamy P |
576 - 579 |
Mild solvothermal synthesis and characterization of ZnO crystals with various morphologies on borosilicate glass substrate Long TF, Takabatake K, Yin S, Sato T |
580 - 584 |
Solvothermal synthesis, controlled morphology and optical properties of Y2O3:EU3+ nanocrystals Devaraju MK, Yin S, Sato T |
585 - 588 |
Growth and characterization of metal-organic crystal: Tetra thiourea cobalt chloride (TTCoC) Murugan GS, Ramasamy P |
589 - 592 |
Morphology control of anisotropic BaTiO3 and BaTiOF4 using organic-inorganic interaction Masuda Y, Tanaka Y, Gao YF, Koumoto K |
593 - 596 |
Aqueous synthesis of nanosheet assembled tin oxide particles and their N-2 adsorption characteristics Masuda Y, Kato K |
597 - 600 |
Low-temperature fabrication of ZnO nanoarray films by forced hydrolysis of anhydrous zinc acetate layer Hu XL, Masuda Y, Ohji T, Kato K |
601 - 604 |
Novel lanthanide-transition-metal coordination polymer materials: Crystal engineering challenges and a ligand-directed assembly strategy Mao WY, Gu XJ, Xue DF |
605 - 607 |
Synthesis and characterization of Ba0.5Sr0.5TiO3 nanoparticles Wang LQ, Kang HM, Xue DF, Liu CH |
608 - 610 |
Synthesis of BaTi2O5 powders by stearic acid gel method Wang LQ, Kang HM, Xue DF, Liu CH |
611 - 614 |
Low-temperature synthesis of ZnTiO3 nanopowders Wang LQ, Kang HM, Xue DF, Liu CH |
615 - 618 |
Application of highly ordered carbon nanotubes templates to field-emission organic light-emitting diodes Li CS, Su SH, Chi HY, Yokoyama M |
619 - 622 |
Synthesis of TiO2(B) using glycolato titanium complex and post-synthetic hydrothermal crystal growth of TiO2(B) Yamamoto K, Tomita K, Fujita K, Kobayashi M, Petrykin V, Kakihana M |
623 - 626 |
Electrochemical crystal growth of perovskite ruthenates Samata H, Saeki Y, Mizusaki S, Nagata Y, Ozawa TC, Sato A |
627 - 633 |
The effect of RF power and deposition temperature on the structure and electrical properties of Mg4Ta2O9 thin films prepared by RF magnetron sputtering Huang CL, Chen JY |
634 - 637 |
Micro-emulsion synthesis of blue-luminescent silicon nanoparticles stabilized with alkoxy monolayers Shirahata N, Furumi S, Sakka Y |
638 - 641 |
Fabrication of titania nanotubular film with metal nanoparticles Lee JH, Choi HS, Lee JH, Kim YJ, Suh SJ, Chi CS, Oh HJ |
642 - 646 |
Deposition of undoped indium oxide thin films on stripe-patterned substrates by spray CVD Kondo T, Funakubo H, Akiyama K, Enta H, Seki Y, Wang MH, Uchida T, Sawada Y |
647 - 650 |
Synthesis and effect of Sr substitution on fluorescence of new Ba2-xSrxZnS3: EU2+ red phosphor: Considerable enhancement of emission intensity Lee CW, Petrykin V, Kakihana M |
651 - 656 |
Simple one-step synthesis of water and organic media soluble gold nanoparticles with various shapes and sizes Moon SY, Sekino T, Kusunose T, Tanaka SI |
657 - 661 |
Tin oxide nanotube structures synthesized on a template of single-walled carbon nanotubes Hoa ND, Van Quy N, Song H, Kang Y, Cho Y, Kim D |
662 - 665 |
SWNT-SOG composite for transparent field emission device Van Quy N, Hoa ND, Cho Y, Oh D, Song H, Kang Y, Kim D |
666 - 669 |
On a geometric model of crystal growth on a flat substrate Brednikhina A, Debelov VA |
670 - 674 |
Impurity effects on nucleation of supercooled Lennard-Jones melt: A molecular dynamics study Takagishi Y, Kubo T, Nakada T |
675 - 679 |
Numerical simulation of natural convection heat transfer in a ZnO single-crystal growth hydrothermal autoclave-Effects of fluid properties Masuda Y, Suzuki A, Mikawa Y, Yokoyama C, Tsukada T |
680 - 683 |
Computer modeling of diamond single crystal growth by the temperature gradient method in carbon-solvent system Demina SE, Kalaev VV, Lysakovskyi VV, Serga MA, Kovalenko TV, Ivahnenko SA |
684 - 687 |
Segregation control of vertical Bridgman growth of Ga-doped germanium crystals by accelerated crucible rotation: ACRT versus angular vibration Wang LC, Liu YC, Yu WC, Roux B, Lyubimova TR, Lan CW |
688 - 694 |
Modeling of convective interactions and crystallization front shape in GaAs/LEC growth process Faiez R, Asadian M |
695 - 697 |
Transient 3D simulation of Czochralski crystal growth considering diameter variations Raufeisen A, Breuer M, Botsch T, Delgado A |
698 - 701 |
Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth Ito T, Akiyama T, Nakamura K |
702 - 706 |
Efficient adaptive three-dimensional phase-field simulation of dendritic crystal growth from various supercoolings using rescaling Chen CC, Lan CW |
707 - 710 |
Study of spatial correlation functions near the glass transition by molecular dynamics simulations Narumi T, Tokuyama M |
711 - 715 |
Polymorphology formation of Cu2O: A microscopic understanding of single crystal growth from both thermodynamic and kinetic models Zhao X, Bao ZY, Sun CT, Xue DF |
716 - 718 |
Growth from the edges and inclusion defect of KDP crystal Teng B, Zhong DG, Yu ZH, Li XB, Wang DJ, Wang QG, Zhao YS, Chen SO, Yu T |
719 - 721 |
Specific surface free energy and etch pit density of synthesized quartz crystal Suzuki T, Sugihara N, Teshima K, Oishi S, Kawasaki M |
722 - 726 |
Spherical crystallization of Si during free fall in drop-tubes Kuribayashi K, Nagashio K, Tajima M |
727 - 730 |
Metastability of Zn1-xMgxO/Cu(In,Ga)Se-2 solar cells with different conduction band offset values Hori H, Tanaka K, Oda Y, Minemoto T, Takakura H |
731 - 734 |
Effect of Al addition on the characteristics of Cu(In,Al)Se-2 solar cells Yamada S, Tanaka K, Minemoto T, Takakura H |
735 - 737 |
Photocatalytic activity of Zr:SrTiO3 under UV illumination Chen L, Zhang SC, Wang LQ, Xue DF, Yin S |
738 - 741 |
Crystallization of In-Se/CuInSe2 thin-film stack by sequential electrodeposition and annealing Oda Y, Matsubayashi M, Minemoto T, Takakura H |
742 - 745 |
Comparison of lift-off processes and rear-surface characterization of Cu(In,Ga)Se-2 thin films for solar cells Anegawa T, Oda Y, Minemoto T, Takakura H |
746 - 748 |
Preparation and photocatalytic properties of strontium titanate powders via sol-gel process Chen L, Zhang SC, Wang LQ, Xue DF, Yin S |
749 - 752 |
Output estimation of Si-based photovoltaic modules with outdoor environment and output map Takahashi H, Fukushige S, Minemoto T, Takakura H |
753 - 756 |
Cu(In,Ga)Se-2 thin-film solar cells grown with cracked selenium Kawamura M, Fujita T, Yamada A, Konagai M |
757 - 759 |
A facile route to TiO2 nanotube arrays for dye-sensitized solar cells Charoensirithavorn P, Ogomi Y, Sagawa T, Hayase S, Yoshikawa S |
760 - 764 |
Growth mechanism of nanocrystalline silicon at the phase transition and its application in thin film solar cells Schropp REI, Rath JK, Li H |
765 - 768 |
Influence of crucible and coating quality on the properties of multicrystalline silicon for solar cells Kvande R, Arnberg L, Martin C |
769 - 772 |
Formation of micrometer-order-thick poly-Si films on textured glass substrates by flash lamp annealing of a-Si films prepared by catalytic chemical vapor deposition Ohdaira K, Fujiwara T, Endo Y, Nishioka K, Matsumura H |
773 - 775 |
Compensation effect of donor and acceptor impurities co-doping on the electrical properties of directionally solidified multicrystalline silicon ingots Dhamrin M, Saitoh T, Yamaga I, Kamisako K |
776 - 779 |
Refining of silicon during its solidification from a Si-Al melt Yoshikawa T, Morita K |
780 - 782 |
Effect of an applied static magnetic field on silicon dissolution into a germanium melt Armour N, Dost S |
783 - 788 |
Microstructure evolution with RTA temperature in nano-thick (Ru or Au)-inserted nickel silicides Yoon K, Song O |
789 - 793 |
Crystallographic properties of grain size-controlled polycrystalline silicon thin films deposited on alumina substrate Ogane A, Honda S, Uraoka Y, Fuyuki T, Fejfar A, Kocka J |
794 - 797 |
Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage Yamane K, Kobayashi T, Furukawa Y, Okada H, Yonezu H, Wakahara A |
798 - 801 |
Liquid phase epitaxial growth of Zn3As2 and the effect of 100 MeV Ni9+ ion irradiation Sudhakar S, Baskar K |
802 - 805 |
Comparison of structural and optical properties of GaSb/AlGaSb quantum well structures grown on different oriented Si substrates Toyota H, Yasuda T, Endoh T, Nakamura S, Jinbo Y, Uchitomi N |
806 - 808 |
Local control of strain in SiGe by ion-implantation technique Sawano K, Hoshi Y, Hiraoka Y, Usami N, Nakagawa K, Shiraki Y |
809 - 813 |
Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (110) Si substrates Arimoto K, Watanabe M, Yamanaka J, Nakagawa K, Sawano K, Shiraki Y, Usami N, Nakajima K |
814 - 818 |
Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates Arimoto K, Kawaguchi G, Shimizu K, Watanabe M, Yamanaka J, Nakagawa K, Usami N, Nakajima K, Sawano K, Shiraki Y |
819 - 824 |
Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures Arimoto K, Watanabe M, Yamanaka J, Nakagawa K, Usami N, Nakajima K, Sawano K, Shiraki Y |
825 - 828 |
Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method Hoshi Y, Sawano K, Hiraoka Y, Sato Y, Ogawa Y, Yamada A, Usami N, Nakagawa K, Shiraki Y |
829 - 832 |
Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth Smirnov AD, Kalaev VV |
833 - 836 |
Silicon optical waveguide modulator incorporating a hybrid structure of transistor and p(+)-n -n(+) diode Chuang RW, Liao ZL, Cheng CC, Hsu MT |
837 - 841 |
Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits Yang DR, Chen JH, Ma XY, Que DL |
842 - 846 |
Lattice-mismatched InGaP/GaAs (111)B liquid phase epitaxy with epitaxial lateral overgrowth Hayashi S, Nangu M, Morikuni T, Owa S, Takahashi NS |
847 - 850 |
Dependence of In2Se3 crystal structures grown on GaAs (001) substrates on growth temperature and VI/III ratio Kato T, Utsugi Y, Ohara T, Muranaka T, Nabetani Y, Matsumoto T |
851 - 854 |
Polarization and excitation power-dependent photoluminescence of magnetic/non-magnetic coupled quantum dots Lee S, Dobrowolska M, Furdyna JK |
855 - 858 |
Solution growth of single crystalline 6H, 4H-SiC using Si-Ti-C melt Kamei K, Kusunoki K, Yashiro N, Okada N, Tanaka T, Yauchi A |
859 - 862 |
Effect of annealing on sheet carrier density of AlGaN/GaN HEMT structure Chen NC, Tseng CY, Lin HT |
863 - 866 |
Cathode-luminescence study of photonic crystal green InxGa1-xN/InyGa1-yN light emitting diodes Choi ES, Doan MH, Nguyen HPT, Kim S, Lim H, Rotermund F, Lee JJ |
867 - 870 |
Improved output power of 400-nm InGaN/AlGaN LEDs using a novel surface roughening technique Huang SC, Wuu DS, Wu PY, Lin WY, Tu PM, Yeh YC, Hsu CP, Chan SH |
871 - 874 |
Numerical modeling of SiC single crystal growth-sublimation and hot-wall epitaxy Nishizawa S |
875 - 877 |
Hydrothermal-method-grown ZnO single crystal as fast EUV scintillator for future lithography Nakazato T, Furukawa Y, Tanaka M, Tatsumi T, Nishikino M, Yamatani H, Nagashima K, Kimura T, Murakami H, Saito S, Shimizu T, Sarukura N, Nishimura H, Mima K, Kagamitani Y, Ehrentraut D, Fukuda T |
878 - 882 |
Luminescence properties of Eu2+-doped beta-Si6-zAlzOzN8-z microcrystals fabricated by gas pressured reaction Ryu JH, Park YG, Won HS, Kim SH, Suzuki H, Yoon C |
883 - 887 |
Resonant photoluminescence from Ge self-assembled dots in optical microcavities Xia JS, Tominaga R, Usami N, Iwamoto S, Ikegami Y, Nemoto K, Arakawa Y, Shiraki Y |
888 - 891 |
Spectral properties of Yb:GdVO4 crystals Wu AH, Pan SK, Xu J, Ogawa T, Wada S, Higuchi M, Kodaira K |
892 - 894 |
Single crystal growth of MgO-doped near-stoichiometric lithium niobate crystals and fabrication of Ti:PPLN devices Zheng YQ, Kong HK, Chen H, Tu XN, Shi EW, Chen YL, Zhan H, Liu G, Geng F, Zhang Y, Pan JX |
895 - 898 |
Observation of birefringence in BBO crystals in the terahertz regime Saito S, Estacio E, Nakazato T, Furukawa Y, Shimizu T, Sarukura N, Cadatal M, Pham MH, Ponseca C, Mizuseki H, Kawazoe Y |
899 - 903 |
Spectroscopic studies of Ti3+ ions speciation inside MgAl2O4 spinels Lombard P, Boizot B, Ollier N, Jouini A, Yoshikawa A |
904 - 907 |
Post-annealing effects on the recrystallization and optical properties of CaAl2O4:Eu2+ thin films Lee CK, Kim YJ |
908 - 911 |
Growth and optical properties of Lu-3(Ga,Al)(5)O-12 single crystals for scintillator application Ogino H, Yoshikawa A, Nikl M, Mares JA, Shimoyama JI, Kishio K |
912 - 915 |
Heat treatment and optical absorption studies on Nd:YVO4 crystal Zhang GC, Tu H, Liu YC, Hu ZG |
916 - 920 |
Dielectric, elastic and piezoelectric properties of RCa4O(BO3)(3) (R = rare-earth elements) crystals with monoclinic structure of point group m Shimizu H, Nishida T, Takeda H, Shiosaki T |
921 - 924 |
Growth and magnetic characterization of high-quality alpha'-Na0.75CoO2 single crystals Peng JB, Lin CT |
925 - 928 |
Monitoring of magnetization processes in GaMnAs ferromagnetic film by electrical transport measurement Shin DY, Lee S, Liu X, Furdyna JK |
929 - 932 |
MBE growth of Mn-doped ZnSnAS(2) thin films Asubar JT, Jinbo Y, Uchitomi N |
933 - 936 |
Low-temperature annealing effects on (Ga,Mn)As/Zn-GaAs superlattice structures grown on GaAs(001) substrates Asubar JT, Nakagawa H, Jinbo Y, Uchitomi N |
937 - 940 |
MBE growth and properties of GeMn thin films on (001) GaAs Tsuchida R, Asubar JT, Jinbo Y, Uchitomi N |
941 - 943 |
Persistent photoconductivity phenomena in GaMnAs grown via molecular beam epitaxy Parchinskiy PB, Yu FC, Cho Y, Kim D |
944 - 947 |
Unidirectional growth of < 001 > tetra glycine barium chloride (TGBC) single crystal by Sankaranarayanan-Ramasamy method Pandian MS, Ramasamy P |
948 - 952 |
Fabrication and characterization of size-controlled CuTCNQ charge-transfer complex nanocrystals Hiraishi K, Masuhara A, Yokoyama T, Kasai H, Nakanishi H, Oikawa H |
953 - 955 |
Modification of DAST-based compounds toward enhanced terahertz-wave generation Akiyama K, Okada S, Goto Y, Nakanishi H |
956 - 959 |
Femtosecond laser-induced nucleation of protein in agarose gel Yoshikawa HY, Murai R, Sugiyama S, Sazaki G, Kitatani T, Takahashi Y, Adachi H, Matsumura H, Murakami S, Inoue T, Takano K, Mori Y |
960 - 965 |
The influence of Mn-doping on the nonlinear optical properties and crystalline perfection of tris(thiourea)zinc(II) sulphate crystals: Concentration effects Bhagavannarayana G, Kushwaha SK, Parthiban S, Meenakshisundaram S |
966 - 969 |
Structural study of liquid LiNbO3 by the high-temperature energy dispersive X-ray diffraction coupled with reverse Monte Carlo simulation Sugiyama K, Saito M, Waseda Y |
970 - 973 |
Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy Guo QX, Sueyasu Y, Ding YL, Tanaka T, Nishio M |
974 - 977 |
Synthesis of single crystal (Mg1-xFex)(1-delta)O (x=0.001-1.00) solid-solution and electrical conduction mechanism at high temperature and pressure Yoshiasa A, Sugiyama K, Sakai S, Isobe H, Sakamoto D, Ota K, Arima H, Takei H |
978 - 981 |
X-ray fluorescence holography of In1-xGaxSb mixed crystal Hosokawa S, Ozaki T, Takata N, Happo N, Ikemoto H, Shishido T, Hayashi K |
982 - 985 |
Structural analysis of Ti50Ni44Fe6 single crystal by X-ray fluorescence holography Hu W, Hayashi K, Happo N, Hosokawa S, Terai T, Fukuda T, Kakeshita T, Xie HL, Xiao TQ |
986 - 989 |
Growth and dislocation etching of InBi1-xSex (x=0.15) single crystals Shah D, Pandya GR, Vyas SM |
990 - 993 |
Atomic image around Mn atoms in diluted magnetic semiconductor Cd0.6Mn0.4Te obtained from X-ray fluorescence holography Happo N, Hayashi K, Hosokawa S |
994 - 997 |
Damage of light-emitting diodes induced by high reverse-bias stress Chen NC, Wang YN, Wang YS, Lien WC, Chen YC |
998 - 1004 |
High-resolution stress mapping of Al2O3/monoclinic ZrO2 and Al2O3/cubic ZrO2(Y2O3) eutectics using scanning near-field optical microscopy Fukura S, Kagi H, Nakai M, Sugiyama K, Fukuda T |
1005 - 1008 |
In-situ observation of ettringite crystals Komatsu R, Mizukoshi N, Makida K, Tsukamoto K |