287 - 290 |
Growth of a new nonlinear optical crystal-BaAlBO3F2 Hu ZG, Yoshimura M, Mori Y, Sasaki T |
291 - 297 |
Boron oxide encapsulated Bridgman growth of high-purity high-resistivity cadmium telluride crystals Zha M, Zappettini A, Bissoli F, Zanotti L, Corregidor V, Dieguez E |
298 - 303 |
Direct observation of sublimation process on a CdTe(111) surface using an ultrafine particle Tanigaki T, Kimura Y, Suzuki H, Kaito C |
304 - 308 |
Correlations between photoluminescence, and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition Lee IH, Lee CR, Shin DC, Nam O, Park Y |
309 - 315 |
Synthesis of ZnO nanoparticles on Si substrates using a ZnS source Li YJ, Duan R, Shi PB, Qin GG |
316 - 321 |
MOCVD selective growth of InP through narrow openings and its application to InPHBT extrinsic base regrowth Dong YD, Okuno YL, Mishra UK |
322 - 326 |
Growth of good quality InGaN multiple quantum wells by MOCVD Viswanath AK, Lee JI, Kim ST, Kim D |
327 - 330 |
Preparation and characterizations of bulk GaN crystals Song YT, Chen XL, Wang WJ, Yuan WX, Cao YG, Wu X |
331 - 335 |
Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate Wu M, Zhang BS, Chen J, Liu JP, Shen XM, Zhao DG, Zhang JC, Wang JF, Li N, Jin RQ, Zhu JJ, Yang H |
336 - 342 |
Photocurrent measurements on GaAs1-xNx epilayers grown by metalorganic chemical vapor deposition Kim TS, Cuong TV, Park CS, Park JY, Lee HJ, Suh EK, Hong CH |
343 - 347 |
Properties of self-assembled InAs quantum dots grown by various growth techniques Hong SU, Kim JS, Lee JH, Kwack HS, Han WS, Oh DK |
348 - 359 |
Synthesis of AlGaAs-based strained separately confined heterostructure laser diodes by low temperature liquid-phase epitaxy Chandvankar SS, Shah AP, Bhattacharya A, Chandrasekaran KS, Arora BM |
360 - 365 |
Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001)Si substrate by metalorganic vapor phase epitaxy Tanaka S, Honda Y, Kameshiro N, Iwasaki R, Sawaki N, Tanji T, Ichihashi M |
366 - 371 |
Influence of Be on N composition in Be-doped InGaAsN grown by RF plasma-assisted molecular beam epitaxy Xie SY, Yoon SF, Wang SZ, Sun ZZ, Chen P, Chua ST |
372 - 383 |
Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations Nakajima K, Ujihara T, Usami N, Fujiwara K, Sazaki G, Shishido T |
384 - 387 |
Characterization of heterointerfaces in GaAs/MnAs/MnZn-ferrite structures Ito S, Fujioka H, Oshima M |
388 - 393 |
Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows Liu JP, Zhang BS, Wu M, Li DB, Zhang JC, Jin RQ, Zhu JJ, Chen J, Wang JF, Wang YT, Yang H |
394 - 399 |
Strong and stable red photoluminescence from porous silicon prepared by Fe-contaminated silicon Lee DY, Park JW, Leem JY, Kim JS, Kang SK, Son JS, Kang HB, Mun YH, Lee DK, Kim DH, Bae IH |
400 - 409 |
Electrical and optical properties of Cd1-xZnxS (0 <= x <= 0.18) grown by chemical bath deposition Khefacha Z, Benzarti Z, Mnari M, Dachraoui M |
410 - 413 |
The growth and spectroscopic characteristics of Ca3Y2(BO3)(4): Er3+ laser crystal Tu CY, Wang Y, You ZY, Li JF, Zhu ZJ, Wu BC |
414 - 421 |
Growth of thiourea-doped TGS crystals and their characterisation Meera K, Muralidharan R, Tripathi AK, Dhanasekaran R, Ramasamy P |
422 - 426 |
Influence of trivalent ions codoping on the Mo : TbWO4 luminescence properties Yang CH, Li JL, Wang B |
427 - 434 |
Growth of dendritic cobalt nanocrystals at room temperature Zhu YC, Zheng HG, Yang Q, Pan AL, Yang ZP, Qian YT |
435 - 439 |
Hydrothermal growth of single-crystal CaV6O16 center dot 3H(2)O nanoribbons Kong LF, Shao MW, Xie Q, Liu HW, Qian YT |
440 - 446 |
XPS and electroluminescence studies on SrS1-xSex and ZnS1-xSex thin films deposited by atomic layer deposition technique Ihanus J, Lambers E, Holloway PH, Ritala M, Leskela M |
447 - 450 |
Solvothermal synthesis of K2V3O8 nanorods Xu HY, He WL, Wang H, Yan H |
451 - 455 |
(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit Song SL, Chen NF, Zhou JP, Li YL, Chai CL, Yang SY, Liu ZK |
456 - 459 |
Growth and spectral properties of Nd3+-doped Sr3Y(BO3)(3) crystal Pan HG, Hu ZS, Lin ZB, Wang GF |
460 - 463 |
Growth and spectral properties of Nd3+ : LaVO4 crystal Zhang LZ, Hi ZS, Lin ZB, Wang GF |
464 - 468 |
MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications Wang SR, Wang W, Zhu HL, Zhao LJ, Zhang RY, Zhou F, Shu HY, Wang RF |
469 - 474 |
Microwave-assisted polyol synthesis of nanoscale SnSx(x=1,2) flakes Chen D, Shen GZ, Tang KB, Lei SJ, Zheng HG, Qian YT |
475 - 485 |
Levitation of metallic melt by using the simultaneous imposition of the alternating and the static magnetic fields Yasuda H, Ohnaka I, Ninomiya Y, Ishii R, Fujita S, Kishio K |
486 - 489 |
The study on properties of Sr2+-doped alpha-BBO crystal Liu JF, He XM, Xu J, Zhou GQ, Zhou SM, Zhao GJ, Li SZ |
490 - 493 |
Large-scale synthesis of uniform Cu2O stellar crystals via microwave-assisted route Wu ZC, Shao MW, Zhang W, Ni YB |
494 - 499 |
Fabrication of novel urchin-like architecture and snowflake-like pattern CuS Zhu LY, Xie Y, Zheng XW, Liu X, Zhou GE |
500 - 506 |
Influence of polyethylenimine on the precipitation process of lead sulfate crystals Katayama A, Sakuma T, Hirasawa I |
507 - 510 |
Combustion synthesis and luminescence properties of Dy3+-doped MgO nanocrystals Feng G, Shu F, Meng KL, Wen GZ, Guang JZ, Dong X, Rong Y |
511 - 516 |
Crystallization habit of calcium carbonate in the presence of sodium dodecyl sulfate and/or polypyrrolidone Hao W, Qiang S, Ying Z, Wang DJ, Xu DF |
517 - 526 |
Characterization of tautomeric forms of ranitidine hydrochloride: thermal analysis, solid-state NMR, X-ray Mirmehrabi M, Rohani S, Murthy KSK, Radatus B |
527 - 531 |
Sonochemical synthesis of taper shaped HgSe nanorods in polyol solvent Ding T, Zhang JR, Hong JM, Zhu JJ, Chen HY |
532 - 544 |
Role of pore structure in salt crystallisation in unsaturated porous stone Benavente D, del Cura MAG, Garcia-Guinea J, Sanchez-Moral S, Ordonez S |
545 - 550 |
Crystallization habit of calcium carbonate in presence of sodium dodecyl sulfate and/or polypyrrolidone Hao W, Qiang S, Ying Z, Wang DJ, Xu DF |
551 - 556 |
Preparation of nanoscaled BaTiO3 powders by DSS method near room temperature under normal pressure Qi HQ, Li LT, Wang YL, Gui ZL |
557 - 565 |
Microstructure selection map for rapidly solidified Al-rich Al-Ce alloys Zhang ZH, Wang Y, Bian XF |
566 - 579 |
AFM investigation of step kinetics and hillock morphology of the {100} face of KDP Thomas TN, Land TA, Martin T, Casey WH, DeYoreo JJ |
580 - 589 |
Development of dendrite array growth during alternately changing solidification condition Ma DX |
590 - 599 |
Detached solidification of InSb on earth Wang HB, Regel LL, Wilcox WR |
600 - 602 |
Comments on the article "Transport properties of Sn-doped InSb thin films and application to Hall element" [J. Crystal Growth 251 (2003) 560] Oszwaldowski M |
603 - 605 |
Reply to'Comments on the article "Transport properties of Sn-doped InSb thin films and application to Hall element [J. Crys Growth 251(2003)560]" by M. Oszwaldowski [J. Crys Growth 260(2004)600]' Okamoto A, Shibasaki I |
606 - 606 |
Comparison of the ZnO : Al films deposited in static and dynamic modes by reactive mid-frequency magnetron sputtering (vol 253, pg 117, 2003) Hong RJ, Jiang X, Szyszka B, Sittinger V, Xu SH, Werner W, Heide G |