Journal of Crystal Growth

Journal of Crystal Growth, Vol.233, No.4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (35 articles)

619 - 621	Growth of Bi3-2xCa2xFe5-x-yInyVxO12 crystals by top seed solution growth (TSSG) technique Song YT, Wang CQ, Wu X
622 - 630	Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field Won YC, Kakimoto K, Ozoe H
631 - 638	Growth of bulk Ga1-xMnxN single crystals Szyszko T, Kamler G, Strojek B, Weisbrod G, Podsiadlo S, Adamowicz L, Gebicki W, Szczytko J, Twardowski A, Sikorski K
639 - 644	Two-dimensional ordering arrays of InAsxP1-x islands formed by As/P exchange reaction on InP (311)B surface Xu HZ, Akahane K, Song HZ, Okada Y, Kawabe M
645 - 659	Micromechanical based constitutive relations for modeling the bulk growth of single crystal InP Kalan RJ, Maniatty AM
660 - 666	Study of Al segregation phenomenon during Czochralski growth of AlxGa1-xSb Hayakawa Y, Krishnamurthy D, Ohsawa H, Nakano H, Koyama T, Kumagawa M
667 - 672	Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition Cho HK, Lee JY, Jeon SR, Yang GM
673 - 680	Effects of stress on the microstructure of the corner defect in As+-implanted, two-dimensional amorphized Si Shin YG, Lee JY, Park MH, Kang HK
681 - 686	Influence of carrier gas on the morphology and structure of GaN layers grown on sapphire substrate by six-wafer metal organic chemical vapor deposition system Wang HX, Amijima Y, Ishihama Y, Sakai S
687 - 698	Three-dimensional numerical simulation of thermal convection in an industrial Czochralski melt: comparison to experimental results Vizman D, Grabner O, Muller G
699 - 708	Correlation between structural parameters of colquiriite structures Pawlak DA, Wozniak K, Shimamura K, Fukuda T
709 - 716	Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy Elsass CR, Poblenz C, Heying B, Fini P, Petroff PM, DenBaars SP, Mishra UK, Speck JS
717 - 722	Crystal growth of beta'-Gd-2(MoO4)(3) and in situ observation of its domain structure by the microscope and the synchrotron X-ray topography Yuan QX, Zhao CH, Luo WP, Yin XF, Xu J, Pan SK
723 - 729	Experimental design method applied to microwave plasma enhanced chemical vapor deposition diamond films Hung CC, Shih HC
730 - 736	Raman scattering investigation of the effect of EDTA additives on growth habit of KDP Lu GW, Xia HR, Zhang SQ, Sun X, Gao ZS, Wang JY
737 - 748	Growth and morphology of cobalt nanoparticles on alumina Dureuil V, Ricolleau C, Gandais M, Grigis C, Lacharme JP, Naudon A
749 - 754	Long-range order in CdxZn1-xTe epilayers grown on GaAs substrates Lee HS, Lee JY, Kim TW, Park HL
755 - 760	Crystal growth and optical assessment of Nd3+: GdAl3(BO3)(4) crystal Wang GF, Lin ZB, Hu ZS, Han TPJ, Gallagher HG, Wells JPR
761 - 773	Crystallite size growth and the derived dilatometric effect during theta- to alpha-phase transformation of nano-sized alumina powders Yen FS, Wen HL, Hsu YT
774 - 778	The synthesis of SbSI rodlike crystals with studded pyramids Yang Q, Tang KB, Wang CR, Hai B, Shen GZ, An CH, Zhang CJ, Qian YT
779 - 784	RHEED and XPS study of GaN on Si(111) grown by pulsed laser deposition Ohta J, Fujioka H, Takahashi H, Sumiya M, Oshima M
785 - 790	The formation mechanism of self-assembled CdSe quantum dots Yang Y, Shen DZ, Zhang JY, Fan XW, Li BS, Lu YM, Liu YC, Liu YN
791 - 794	Growth of high resistivity CdZnTe crystals by modified Bridgman method Li QF, Zhu SF, Zhao BJ, Jing YR, Gao DY, Cai L
795 - 798	Growth and characterization of ZnCdTe-ZnTe quantum wells on ZnO coated Si substrate by metalorganic chemical vapor deposition Shan CX, Fan XW, Zhang JY, Zhang ZZ, Ma JG, Lu YM, Liu YC, Shen DZ
799 - 802	The effect of agitation states on hydrothermal synthesis of Bi2S3 nanorods Shao MW, Mo MS, Cui Y, Chen G, Qian YT
803 - 808	A simple method to synthesize Si3N4 and Si/SiO2 nanowires from Si or Si/SiO2 mixture Zhang YJ, Wang NL, He RR, Liu J, Zhang XZ, Zhu J
809 - 812	Growth of potassium nickel sulfate hexahydrate (KNSH) crystal and its characterization He YP, Chen JR, Su GB, Zhuang XX, Lee GH, Jiang RH
813 - 822	Importance of nitrate in the crystal growth of cytochrome c from four biological species judged by morphodrom analysis Kubota T, Homma K, Noda J, Yamane T, Ataka M
823 - 828	Crystallization behavior of the amorphous carbon nanotubes prepared by the CVD method Ci LJ, Wei BQ, Xu CL, Liang J, Wu DH, Xie SS, Zhou WY, Li YB, Liu ZQ, Tang DS
829 - 836	A microwave assisted heating method for the rapid synthesis of sphalrite-type mercury sulfide nanocrystals with different sizes Wang H, Zhang HR, Zhu JJ
837 - 845	Bassanite (CaSO4 center dot 0.5H(2)O) dissolution and gypsum (CaSO4 center dot 2H(2)O) precipitation in the presence of cellulose ethers Brandt F, Bosbach D
846 - 862	Development and application of a constant supersaturation, semi-batch crystalliser for investigating gibbsite agglomeration Ilievski D
863 - 867	Growth and characterization of organic NLO crystals of semicarbazone of acetophenone Vijayan N, Babu RR, Gopalakrishnan R, Dhanuskodi S, Ramasamy P
868 - 880	Recrystallization phenomena of solution grown paraffin dendrites Hollander FFA, Stasse O, van Suchtelen J, van Enckevort WJP
881 - 896	Flows induced by inclined rotation in directional solidification of variable-viscosity solutions Chang MH, Chen FL