Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.7, No.4 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (24 articles)

A71 - A74	Development of novel method for preparation of PEMFC electrodes Kim H, Popov BN
A75 - A77	Nanostructured lead dioxide thin electrode Morales J, Petkova G, Cruz M, Caballero A
A78 - A81	Effect of cell width on segmented-in-series SOFCs Lai TS, Liu J, Barnett SA
A82 - A84	Extent of PEMFC cathode surface oxidation by oxygen and water measured by CV Paik CH, Jarvi TD, O'Grady WE
A85 - A87	Versatile synthesis of carbon-rich LiFePO4 enhancing its electrochemical properties Bauer EM, Bellitto C, Pasquali M, Prosini PP, Righini G
A88 - A92	POSS based electrolytes for rechargeable lithium batteries Maitra P, Wunder SL
C39 - C42	Influence of elastic deformation on initiation of pits on duplex stainless steels Vignal V, Mary N, Valot C, Oltra R, Coudreuse L
C43 - C45	Improvement in the crystalline quality of epitaxial GaN films grown by MOCVD by adopting porous 4H-SiC substrate Jeong JK, Kim HJ, Seo HC, Kim HJ, Yoon E, Hwang CS, Kim HJ
C46 - C48	Plasma-enhanced atomic layer deposition of ruthenium thin films Kwon OK, Kwon SH, Park HS, Kang SW
C49 - C51	Low-temperature deposition of nanocrystalline ZnO phosphor films from neutral ethanolic zinc acetate solutions in the absence of base Hosono E, Fujihara S, Kimura T
C52 - C54	Electroacoustic measurements on electrodeposited films obtained from copper damascene process chemistries Gabrielli C, Mocoteguy P, Perrot H, Zdunek A, Bouard P, Haddix M
C55 - C56	Atomic layer deposition of hafnium silicate thin films using HfCl2[N-SiMe3)(2)](2) and H2O Nam WH, Rhee SW
F25 - F29	Optimized nitridation of Al2O3 interlayers for atomic-layer-deposited HfO2 gate dielectric films Park HB, Cho M, Park J, Lee SW, Hwang CS, Jeongb J
G51 - G52	Back side damage gettering of Cu using a cavitating jet Kumano H, Soyama H
G53 - G55	MOSFETs with recessed SiGe source/drain junctions formed by selective etching and growth Isheden C, Hellstrom PE, Radamson HH, Zhang SL, Ostling M
G56 - G58	Correlation between bond cleavage in parylene N and the degradation of its dielectric properties Senkevich JJ, Mallikarjunan A, Wiegand CJ, Lu TM, Bani-Salameh HN, Lichti RL
G59 - G61	A self-aligned gate-all-around MOS transistor on single-grain silicon Zhang SD, Han RQ, Wang HM, Chan MS
G62 - G64	Low-temperature growth of thermal quality SiO2 thin films in high-density He/O-2 plasma generated by RF driven ICP source Joshi PC, Ono Y, Voutsas AT, Hartzell JW
G65 - G67	Low resistance Ni-Mg solid solution/Pt ohmic contacts to p-type GaN Leem DS, Song JO, Kim SH, Seong TY
G68 - G71	Effect of stress on the properties of copper lines in Cu interconnects Balakumar S, Kumar R, Shimura Y, Namiki K, Fujimoto M, Toida H, Uchida M, Hara T
G72 - G74	Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contact to undoped AlGaN/GaN heterostructures Desmaris V, Eriksson J, Rorsman N, Zirath H
G75 - G78	Texturing of as-cut silicon conducted under negative potentials Starosvetsky D, Gordon N, Ein-Eli Y
G79 - G82	Electrical equivalent sidewall damage in patterned low-k dielectrics Iacopi F, Stucchi M, Richard O, Maex K
G83 - G85	Abnormal oxidation of NiSi formed on arsenic-doped substrate Yun JG, Ji HH, Oh SY, Bae MS, Lee HJ, Huang BF, Kim YG, Wang JS, Sung NG, Hu SB, Lee JG, Park SH, Lee HS, Ho WJ, Kim DB, Lee HD