Characteristics of Ge2Sb2Te5 Thin Films Deposited by DC Magnetron Sputtering

Young Soo Song; Chee Won Chung

Journal of Industrial and Engineering Chemistry, Vol.9, No.5, 551-555, September, 2003

Export Citation

Characteristics of Ge₂Sb₂Te₅ Thin Films Deposited by DC Magnetron Sputtering

Young Soo Song, and Chee Won Chung^†

Department of Chemical Engineering and Institute of Clean Technology, Inha University, Incheon 402-751, Korea

E-mail:

Ge₂Sb₂Te₅ (GST) thin films for various data storage systems were prepared by dc magnetron sputtering. The deposition rate, crystalline structure and the optical property of GST films were studied as a function of de power and annealing temperature. The deposition rate of GST films was linearly increased with increasing dc power. It was confirmed from x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) that the phase change took place at the temperature ranges of 150 ~ 200 and 300 ~ 350℃. The relative change in the reflectance (ΔR) of GST films was also observed for the temperatures before and after phase change. In particular, GST thin films deposited at higher power of 90 W exhibited high change of reflectance than those deposited at 30 and 60 W.

Keywords:Ge₂Sb₂Te₅;DC magnetron sputtering;data storage;phase change

[References]

Weidenhof V, Friedrich I, Wuttig M, J. Appl. Phys., 89, 3168 (2001)
Kim JH, J. Appl. Phys., 86, 6770 (1999)
Shintani T, Nakamura K, Hosaka S, Hirotsune A, Terao M, Imura R, Fujita K, Yoshida M, Kammer S, Ultramicroscopy, 61, 285 (1995)
Weidenhof V, Friedrich I, Ziegler S, Wuttig M, J. Appl. Phys., 86, 5879 (1999)
Friedrich I, Weidenhof V, Njoroge W, Franz P, Wuttig M, J. Appl. Phys., 87, 4130 (2000)
Zhou GF, Mater. Sci. Eng., A304, 73 (2001)
Weidenhof V, Pirch N, Friedrich I, Ziegler S, Wuttig M, J. Appl. Phys., 88, 657 (2000)
Forst M, Dekorsy T, Trappe C, Laurenzis M, Kurz H, Bechevet B, Appl. Phys. Lett., 77, 1964 (2000)
Chung CW, Kim HI, Byun YH, J. Ind. Eng. Chem., 8(3), 253 (2002)

[Referenced By]

[Related Articles]

[1] Weidenhof V, Friedrich I, Wuttig M, J. Appl. Phys., 89, 3168 (2001)

[2] Kim JH, J. Appl. Phys., 86, 6770 (1999)

[3] Shintani T, Nakamura K, Hosaka S, Hirotsune A, Terao M, Imura R, Fujita K, Yoshida M, Kammer S, Ultramicroscopy, 61, 285 (1995)

[4] Weidenhof V, Friedrich I, Ziegler S, Wuttig M, J. Appl. Phys., 86, 5879 (1999)

[5] Friedrich I, Weidenhof V, Njoroge W, Franz P, Wuttig M, J. Appl. Phys., 87, 4130 (2000)

[6] Zhou GF, Mater. Sci. Eng., A304, 73 (2001)

[7] Weidenhof V, Pirch N, Friedrich I, Ziegler S, Wuttig M, J. Appl. Phys., 88, 657 (2000)

[8] Forst M, Dekorsy T, Trappe C, Laurenzis M, Kurz H, Bechevet B, Appl. Phys. Lett., 77, 1964 (2000)

[9] Chung CW, Kim HI, Byun YH, J. Ind. Eng. Chem., 8(3), 253 (2002)