| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | 9Remote plasma ALD of Silicon nitride at low temperature for gate spacer |
| 초록 | Silicon nitride (SiNx) is one of the most widely used materials in the field of semiconductor due to excellent thermal stability, high etch selectivity, optical, mechanical and electrical properties. SiNx is widely used as gate sidewall spacer, etch stop layer, gate dielectric, stress liner and charge trap layer. For these reasons, SiNx has been investigated extensively with low-pressure chemical vapor deposition (LPCVD) and plasma enhanced CVD (PECVD). LPCVD SiNx is the most common deposition method for SiNx gate spacer and charge trap layer due to its low hydrogen content, excellent etching properties, and good step coverage. LPCVD SiNx is deposited at 700 - 800°C. However, as the device size is scaled down continuously, in gate spacer, the deposition temperature should get lower to prevent dopant re-distribution. Therefore, there is still demand for new deposition method to ensure excellent step coverage and precise thickness control at low deposition temperature. Among various deposition methods, atomic layer deposition (ALD) is considered to be the best solution to satisfy above-mentioned requirements. Particularly, remote plasma ALD (RPALD) was utilized to enhance the reactivity between precursor and reactant gas for high film density with minimizing plasma damage. In RPALD, the plasma generation section is remotely outside of reaction chamber and the radicals in plasma generation region enter into the reaction chamber for deposition. In this study, we developed low temperature silicon nitride RPALD. SiNx films were deposited using the Bis(dimethylaminomethyl(silyl)trimethylsilyl)amine as a precursor and nitrogen plasma as a reactant. We investigated the property of SiNx films. Auger electron spectroscopy (AES) was utilized to measure the composition of SiNx films. Atomic force microscopy (AFM) was used to characterize the surface morphology and X-ray photoelectron spectroscopy (XPS) was utilized for chemical binding state. We carried out relative wet etch rate (WER) compared to silicon nitride deposited by commercial method which is LPCVD at higher deposition temperature. In addition, I-V measurements were investigated to obtain the leakage current and breakdown voltage. |
| 저자 | 김만석, 장우출, 김현정, 이재민, 이건영, 신창희, 권영균, 임희우, 전형탁 |
| 소속 | 한양대 |
| 키워드 | Bis(dimethylaminomethyl(silyl)trimethylsilyl)amine; SiNx; gate spacer; Atomic Layer Deposition (ALD) |
