| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Enhanced crystallinity of VO2 thin film by post annealing |
| 초록 | Resistive random access memory (ReRAM) is one of the most promising candidates for non-volatile memories (NVMS) and it has positive prospect for next generation non-volatile memory because of its small cell size, long retention time, and fast switching speed. However, ReRAM has the general problem of sneak path current through neighboring cells. It causes the wrong interpretation of the stored cell during the reading process. Therefore, each cell has to be connected the selection device to prevent the sneak path current. The various oxide-switching materials are the significant candidates for selection devices. Among these materials, vanadium dioxide (VO2) has attracted much attention owing to its metal-insulator transition (MIT) property along with a high ON/OFF ratio, fast switching speed, and high current density. The crystal structure of VO2 is monoclinic structure below 68℃. The crystal structure of VO2 changes from monoclinic to tetragonal when VO2 receives energy such as heat or light. In this study, we investigated the crystallization of VO2 thin film by post annealing. Monoclinic VO2 thin films were deposited with the thermal ALD process employing OV(OCH(CH3)2)3 as a vanadium precursor and de-ionized (DI) water as a reactant. Argon (Ar) gas was injected as a purge gas. The deposition temperature was 320 °C. The process pressure was maintained at 0.85 Torr (300 sccm purge Ar gas). At first, we performed X-ray diffraction analysis (XRD) of thin film to show the crystallinity of VO¬2. In addition, we used X-ray photoelectron spectroscopy (XPS) to figure out the binding energy of VO2. We analyzed the thickness and the roughness of VO2 thin film using scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. Finally, we analyzed the electrical properties of VO2 thin film using semiconductor parameter analyzer. |
| 저자 | 김범식, 장우출, 정찬원, 조해원, 김현정, 임희우, 권영균, 전형탁 |
| 소속 | 한양대 |
| 키워드 | resistance random access memory; atomic layer deposition; vanadium dioxide; metal insulator transition |
