| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Characteristics of silicon oxy-carbide deposited by RPALD using OMCTS |
| 초록 | As the shrinkage of feature size in device continued, resistance-capacitance (RC) time delay has become the determining factor in chip performance due to non-negligible parasitic capacitance. Therefore, low dielectric constant (k) materials have been studied to reduce parasitic capacitance. Silicon oxy-carbide (SiOC) among the low k materials has attracted much attention due to their excellent thermal, mechanical and electrical stability. Among thin film deposition methods, atomic layer deposition (ALD) is considered one of best techniques because it enables to deposit thin films very comformally and precisely.. Especially, remote plasma ALD (RPALD) was utilized to enhance the reaction of film deposition and avoid plasma damage. In this study, we developed SiOC RPALD process using Octamethylcyclotetrasiloxan (OMCTS) with oxygen plasma. And the characteristics of deposited films were investigated after deposition annealing below 400°C was carried out. The chemical bonding states and compositions have been characterized using Fourier transform infrared spectroscopy (FTIR), X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Dielectric constant of films was determined by capacitance-voltage (C-V) measurement system. Leakage current of films also have been examined by current-voltage measurement. |
| 저자 | 이재민, 장우출, 김현정, 권영균, 전형탁 |
| 소속 | 한양대 |
| 키워드 | Octamethylcyclotetrasiloxan (OMCTS); SiOC; low-k dielectric; Atomic Layer Deposition(ALD) |
