1 - 8 |
Homoepitaxial growth of CdTe on vicinal CdTe(100) surfaces: Reaction kinetics and mechanism Yong KJ, Martinez H, Gellman AJ, Sides PJ |
9 - 13 |
Molecular beam epitaxial growth and structural properties of Bi1-xSbx alloy thin films on CdTe(III) substrates Cho SL, DiVenere A, Wong GK, Ketterson JB, Meyer JR |
14 - 18 |
Room-temperature growth of ZrO2 thin films using a novel hyperthermal oxygen-atom source Wisotzki E, Balogh AG, Hahn H, Wolan JT, Hoflund GB |
19 - 25 |
Low energy ion beam etching of CuInSe2 surfaces Otte K, Lippold G, Frost A, Schindler A, Bigl F, Yakushev MV, Tomlinson RD |
26 - 37 |
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism Schaepkens M, Standaert TEFM, Rueger NR, Sebel PGM, Oehrlein GS, Cook JM |
38 - 51 |
Characterization of Cl-2/Ar high density plasmas for semiconductor etching Eddy CR, Leonhardt D, Douglass SR, Thoms BD, Shamamian VA, Butler JE |
52 - 55 |
Response surface study of inductively coupled plasma etching of GaAs/AlGaAs in BCl3/Cl-2 Agarwala S, King O, Horst S, Wilson R, Stone D, Dagenais M, Chen YJ |
56 - 61 |
Reactive ion etching of GaN and GaAs: Radially uniform processes for rectangular, smooth sidewalls Franz G, Rinner F |
62 - 69 |
Penning type magnetron sputtering source and its use in the production of carbon nitride coatings Murphy MJ, Monaghan J, Tyrrell M, Walsh R, Cameron DG, Chowdhury AKMS, Monclus M, Hashmi MSJ |
70 - 76 |
Abnormal steady states in reactive sputtering Zhu SL, Wang FH, Wu WT |
77 - 82 |
Hollow cathode magnetron Wang ZH, Cohen SA |
83 - 87 |
Ferroelectric SrBi2Ta2O9 thin film deposition at 550 degrees C by plasma-enhanced metalorganic chemical vapor deposition onto a metalorganic chemical vapor deposition platinum bottom electrode Seong NJ, Choi ES, Yoon SG |
88 - 92 |
Effect of prepared GaAs surface on the sulfidation with (NH4)(2)S-x solution Kang MG, Park HH |
93 - 96 |
Surface roughness and oxide contents of gas-phase and solution-phase polysulfide passivation of III-V surfaces Choy WH, Kwok RWM, So BKL, Hui GKC, Chen YJ, Xu JB, Wong SP, Lau WM |
97 - 101 |
Passivation of CdZnTe surfaces by oxidation in low energy atomic oxygen Chen H, Chattopadhyay K, Chen KT, Burger A, George MA, Gregory JC, Nag PK, Weimer JJ, James RB |
102 - 107 |
Deposition of high quality silicon dioxide on Hg1-xCdxTe by low-temperature liquid phase deposition method Wang NF, Chang WJ, Houng MP, Wang YH, Huang CJ |
108 - 112 |
Hydrogenated silicon nitride thin films deposited between 50 and 250 degrees C using nitrogen/silane mixtures with helium dilution Klein TM, Anderson TM, Chowdhury AI, Parsons GN |
113 - 120 |
Deposition of ultrapure hydrogenated amorphous silicon Kamei T, Matsuda A |
121 - 124 |
Deposition of diamond-like carbon films using the screen grid method in electron cyclotron resonance chemical vapor deposition Yoon SF, Ahn RJ, Zhang Q, Wu YS, Yang H |
125 - 132 |
Diagnostics and modeling in a pure argon plasma: Energy balance study Kelkar UM, Gordon MH, Roe LA, Li Y |
133 - 137 |
High temperature oxidation of (Ti1-xAlx)N coatings made by plasma enhanced chemical vapor deposition Kim BJ, Kim YC, Nah JW, Lee JJ |
138 - 143 |
Diagnostics of the diamond depositing inductively coupled plasma by electrostatic probes and optical emission spectroscopy Teii K |
144 - 149 |
Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry Zhou SM, Hundhausen M, Stark T, Chen LY, Ley L |
150 - 154 |
Ultraviolet-ozone jet cleaning process of organic surface contamination layers Moon DW, Kurokawa A, Ichimura S, Lee HW, Jeon IC |
155 - 158 |
Effect of laser-induced dissociation of SiH3 radicals in SiH4 plasmas during atomic hydrogen measurements using laser-induced fluorescence by a two-photon excitation Miyazaki K, Mishiro Y, Kajiwara T, Uchino K, Muraoka K, Okada T, Maeda M |
159 - 163 |
Room temperature visible electroluminescence in silicon nanostructures Wu W, Huang XF, Chen KJ, Xu JB, Gao X, Xu J, Li W |
164 - 169 |
Fermi level pinning on HF etched silicon surfaces investigated by photoelectron spectroscopy Schlaf R, Hinogami R, Fujitani M, Yae S, Nakato Y |
170 - 175 |
Spectroscopic analysis of photochromic films Mo YG, Dillon RO, Snyder PG |
176 - 182 |
Continuity and topography of ultrathin diamond-like carbon films characterized by scanning electron microscopy energy dispersive x-ray analysis and atomic force microscopy Lemoine P, Mc Laughlin JM |
183 - 189 |
Generation of atomic nitrogen flux monitoring by an atomic absorption detection system at 120 nm Wang WZ, Hammond RH, Arnason SB, Beasley MR |
190 - 197 |
Intelligent process control of indium tin oxide sputter deposition using optical emission spectroscopy Eisgruber IL, Engel JR, Hollingsworth RE, Bhat PK, Wendt R |
198 - 205 |
Lithium depth profiling in thin electrochromic WO3 films Krings LHM, Tamminga Y, van Berkum J, Labohm F, van Veen A, Arnoldbik WM |
206 - 211 |
Design and experimental approach of optical reflection filters with graded refractive index profiles Wang X, Masumoto H, Someno Y, Hirai T |
212 - 228 |
Vapor deposition modeling for an entrenched wafer geometry Willett LJ, Loyalka SK, Tompson RV |
229 - 234 |
Solution of the outgassing equation for the pump down of an unbaked vacuum system Akaishi K |
235 - 241 |
Viscosity and velocity slip coefficients for gas mixtures: Measurements with a spinning rotor gauge Bentz JA, Tompson RV, Loyalka SK |
242 - 248 |
Design and performance of an ultrahigh vacuum system for metallic multilayers Chaudhari SM, Suresh N, Phase DM, Gupta A, Dasannacharya BA |
249 - 255 |
Crystalline structure of very hard tungsten carbide thin films obtained by reactive pulsed laser deposition Mihailescu IN, Gyorgy E, Marin G, Popescu M, Teodorescu VS, Van Landuyt J, Grivas C, Hatziapostolou A |
256 - 265 |
Monte Carlo simulation of growth and decay processes in a cluster aggregation source Briehl B, Urbassek HM |
266 - 274 |
Modeling vapor deposition of low-K polymers: Parylene and polynaphthalene Rogojevic S, Moore JA, Gill WN |
275 - 281 |
Plasma induced copolymerization of hexafluoropropylene and octafluoropropane Leezenberg PB, Reiley TC, Tyndall GW |
282 - 290 |
Heterogeneous recombination of atomic bromine and fluorine Kota GP, Coburn JW, Graves DB |
291 - 296 |
Direct observation of Na and O impurities at grain surfaces of CuInSe2 thin films Niles DW, Al-Jassim M, Ramanathan K |
297 - 302 |
Nanofabrication of model catalysts and simulations of their reaction kinetics Johansson S, Wong K, Zhdanov VP, Kasemo B |
303 - 305 |
Secondary ion coincidence in highly charged ion based secondary ion mass spectroscopy for process characterization Hamza AV, Schenkel T, Barnes AV, Schneider DH |
306 - 309 |
Passivation and performance analysis of thin film Peltier heat pumps Shafai C, Brett MJ, Broughton JN |
310 - 313 |
Hollow cathode sputtering cluster source for low energy deposition: Deposition of Fe small clusters Ishii K, Amano K, Hamakake H |
314 - 316 |
Deposition of amorphous nitrogenated carbon films using an alternate plasma deposition method in a dual electron cyclotron resonance-radio frequency plasma Hong JG, Turban G |
317 - 318 |
Low-cost modification for the high-frequency raster on the Cameca IMS-3F secondary ion mass spectrometer Reedy RC, Young MR, Asher SE |
319 - 321 |
A new and simple variable-angle accessory for infrared specular reflectance Polo MC, Ferrer N, Romero M, Perez J, Quevedo M, Vilardell F |
322 - 322 |
Determination of metal vapor ion concentration in an argon/copper plasma for ionized physical vapor deposition (vol A16, pg 2198, 1998) Foster JE, Wendt AE, Wang WW, Booske JH |
323 - 323 |
Chemical downstream etching of tungsten (vol A16, pg 2115, 1998) Blain MG, Jarecki RL, Simonson RJ |