Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.23, No.1 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (60 articles)

1 - 4	Electrical and optical properties of GaCrN films grown by molecular beam epitaxy Polyakov AY, Smirnov NB, Govorkov AV, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ
5 - 10	Thermal oxidation of Si1-x-yGe(x)C(y) epitaxial layers characterized by Raman and infrared spectroscoples Cuadras A, Garrido B, Morante JR, Hunt CE, Robinson MD
11 - 19	Deposition of silica-silver nanocomposites by magnetron cosputtering Boscarino D, Vomiero A, Mattei G, Quaranta A, Mazzoldi P, Della Mea G
20 - 23	Local pressure in the proximity of a field emitter Zumer M, Nemanic V, Zajec B
24 - 31	Deposition of diamond-like carbon film on phase-change optical disk by PECVD Ueng HY, Guo CT
32 - 41	Fabrication technique for microelectromechanical systems vertical comb-drive actuators on a monolithic silicon substrate Zhang QX, Liu AQ, Li J, Yu AB
42 - 47	Improved C-V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition Kadoshima M, Akiyama K, Yamamoto K, Fujiwara H, Yasuda T, Nabatame T, Toriumi A
48 - 50	Electrical properties of Ni/Au and Au contacts on p-type GaN Lin YJ
51 - 56	Sidewall profile control of thick benzocyclobutene reactively ion etched in CF4/O-2 plasmas Buchwald WR, Vaccaro K
57 - 60	Use of 370 nm UV light for selective-area fibroblast cell growth Kang BS, Ren F, Jeong BS, Kwon YW, Baik KH, Norton DP, Pearton SJ
61 - 65	Determination of spatial resolution in atomic-force-microscopy-based electrical characterization techniques using quantum well structures Douheret O, Bonsels S, Anand S
66 - 71	Characterization of prototype silicon pitch artifacts fabricated by scanning probe lithography and anisotropic wet etching Chien FSS, Hsieh WF, Gwo S, Jun J, Silver RM, Vladar AE, Dagata JA
72 - 75	Nanoimprint process using epoxy-slioxane low-viscosity prepolymer Viallet B, Gallo P, Daran E
76 - 79	Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures Kluth SM, Alvarez D, Trellenkamp S, Moers J, Mantl S
80 - 83	Low temperature crystallization of high permittivity Ta oxide using an Nb oxide thin film for metal/insulator/metal capacitors in dynamic random access memory applications Ma DJ, Park SH, Seo BS, Choi SJ, Lee NS, Lee JH
84 - 89	Predicting surface figure in diamond turned calcium fluoride using in-process force measurement Marsh ER, John BP, Couey JA, Wang J, Grejda RD, Vallance RR
90 - 95	High-temperature self-grown ZrO2 layer against Cu diffusion at Cu(2.5 at. % Zr)/SiO2 interface Liu CJ, Chen JS
96 - 98	Anodic bonding using the low expansion glass ceramic Zerodur (R) van Elp J, Giesen PTM, van der Velde JJ
99 - 102	Tapered sidewall dry etching process for GaN and its applications in device fabrication Choi HW, Jeon CW, Dawson MD
103 - 112	Mass spectrometry studies of resist trimming processes in HBr/O-2 and Cl-2/O-2 chemistries Pargon E, Joubert O, Chevolleau T, Cunge G, Xu SL, Lill T
113 - 118	High-temperature electrostatic chuck for nonvolatile materials dry etch Kanno S, Edamura M, Yoshioka K, Nishio R, Kanai S, Kihara H, Shimada T
119 - 124	Use of lateral film structure for ultrathin diffusion barrier thermal stability study Lim BK, Park HS, Tan V, See AKH, Seet CS, Lee TJ, Yakovlev NL
125 - 129	Chamber maintenance and fault detection technique for a gate etch process via self-excited electron resonance spectroscopy Baek KH, Jung YJ, Min GJ, Kang CJ, Cho HK, Moon JT
130 - 132	Fabrication of natural diamond microlenses by plasma etching Choi HW, Gu E, Liu C, Griffin C, Girkin JM, Watson IM, Dawson MD
133 - 137	Partial blanking of an electron beam using a quadrupole lens Zhang F, Smith HI
138 - 143	Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography Junarsa I, Stoykovich MP, Nealey PF, Ma YS, Cerrina F
144 - 148	Studies on the interfacial and crystallographic characteristics of Al2O3/SiO2/Si and ZrO2/SiO2/Si stacks Kim JJ, Yang JM, Jang SA, Lim KY, Cho HJ, Lee SY, Kawasaki M
149 - 152	Photoluminescence properties of p-type InGaAsN grown by rf plasma-assisted molecular beam epitaxy Xie SY, Yoon SF, Wang SZ
153 - 156	Formation of GdSi2 film on Si(111) via phase transformation assisted by interfacial SiO2 layer Chung KB, Choi YK, Jang MH, Noh M, Whang CN, Jang HK, Jung EJ, Ko DH
157 - 161	High-current-density field emitters based on arrays of carbon nanotube bundles Manohara HM, Bronikowski MJ, Hoenk M, Hunt BD, Siegel PH
162 - 167	LiNbO3 thin film growth on (0001)-GaN Hansen PJ, Terao Y, Wu Y, York RA, Mishra UK, Speck JS
168 - 172	Analysis of stress and composition of silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition for microfabrication processes Cianci E, Pirola F, Foglietti V
173 - 177	On-wafer monitoring of plasma-induced electrical current in silicon dioxide to predict plasma radiation damage Okigawa M, Ishikawa Y, Samukawa S
178 - 185	Schottky barrier height of TiN/p-type Si(100) evaluated by forward current-voltage-and capacitance Pelleg J, Douhin A
186 - 195	Rigorous coupled wave analysis of front-end-of-line wafer alignment marks Yeo SH, Tan CB, Khoh A
196 - 200	Subpicosecond jitter in picosecond electron bunches Ioakeimidi K, Gradinaru S, Liu Z, Machuca F, Nielsen JF, Aldana R, Bolton RP, Clendenin J, Leheny R, Pease RFW
201 - 205	Temperature dependent defect formation and charging in hafnium oxides and silicates Lim D, Haight R
206 - 209	Electron-beam-assisted etching of CrOx films by Cl-2 Wang S, Sun YM, White JM, Stivers A, Liang T
210 - 216	Highly selective low-damage processes using advanced neutral beams for porous low-k films Ohtake H, Inoue N, Ozaki T, Samukawa S, Soda B, Inukai K
217 - 223	Deposition control for reduction of 193 nm photoresist degradation in dielectric etching Negishi N, Takesue H, Sumiya M, Yoshida T, Momonoi Y, Izawa M
224 - 228	Quantifying acid generation efficiency for photoresist applications Tsiartas PC, Schmid GM, Johnson HF, Stewart MD, Willson CG
229 - 235	Comparative study of polycrystalline Ti, amorphous Ti, and multiamoIrphous Ti as a barrier film for Cu interconnect Ou KL, Yu MS, Hsu RQ, Lin MH
236 - 241	Solvent-assisted polymer-bonding lithography Luan SF, Xing RB, Wang Z, Yu XH, Han YC
242 - 246	Effect of self-patterned Si1-xGex template layer on the structural and optical properties of Ge dots Ismail B, Descoins M, Ronda A, Bassani F, Bremond G, Maaref H, Berbezier I
247 - 251	Cleaning of extreme ultraviolet lithography optics and masks using 13.5 nm and 172 nm radiation Hamamoto K, Tanaka Y, Watanabe T, Sakaya N, Hosoya M, Shoki T, Hada H, Hishinuma N, Sugahara H, Kinoshita H
252 - 256	Lithographic tuning of photonic-crystal unit-cell resonators with InGaAs/GaAs quantum dots emitting at 1.2 mu m Choi YS, Kim SK, Kim SH, Park HG, Lee YH, Kaiander IN, Hopfer F, Sellin RL, Bimberg D
257 - 261	Characteristics of heavily doped p(+)/n ultrashallow junction prepared by plasma doping and laser annealing Baek S, Heo S, Choi H, Hwang H
262 - 266	Selective growth of InAs quantum dots on patterned GaAs Hsieh TP, Chiu PC, Liu YC, Yeh NT, Ho WJ, Chyi JI
267 - 270	Ideal delta doping of carbon in GaAs Winking L, Wenderoth M, Reusch TCG, Ulbrich RG, Wilbrandt PJ, Kirchheim R, Malzer S, Dohler G
271 - 273	Electron-beam patterning with sub-2 nm line edge roughness Malac M, Egerton R, Freeman M, Lau J, Zhu YM, Wu LJ
274 - 279	Properties of Mn- and Co-doped bulk ZnO crystals Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Heo YW, Ivill MP, Ip K, Norton DP, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Steiner T
280 - 287	Diffusion-barrier properties of Ta1-xWx alloy films and silicidation-induced Cu penetration in Cu/Si contacts Noya A, Takeyama MB, Sase T
288 - 297	Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition Triyoso DH, Hegde RI, Grant JM, Schaeffer JK, Roan D, White BE, Tobin PJ
298 - 301	Performance of nanomanipulator fabricated on glass capillary by focused-ion-beam chemical vapor deposition Kometani R, Hoshino T, Kondo K, Kanda K, Haruyama Y, Kaito T, Fujita J, Ishida M, Ochiai Y, Matsui S
302 - 306	Monitoring polarization and high-numerical aperture with phase shifting masks: Radial phase grating McIntyre G, Neureuther AR
307 - 317	Verification studies of thermophoretic protection for extreme ultraviolet masks Dedrick DE, Beyer EW, Rader DJ, Klebanoff LE, Leung AH
318 - 321	Pulsed laser deposition of lanthanum monosulfide thin films on silicon substrates Fairchild S, Jones J, Cahay M, Garre K, Draviam P, Boolchand P, Wu X, Lockwood DJ
322 - 326	Investigation of Ta/Ti/Al/Ni/Au ohmic contact to AlGaN/GaN heterostructure field-effect transistor Kim KH, Jeon CM, Oh SH, Lee JL, Park CG, Lee JH, Lee KS, Koo YM
327 - 331	Effects of amine- and pyridine-terminated molecular nanolayers on adhesion at Cu-SiO2 interfaces Ganesan PG, Cui G, Vijayamohanan K, Lane M, Ramanath G
332 - 335	Process integration compatibility of low-k and ultra-low-k dielectrics Moore D, Carter R, Cui H, Burke P, McGrath P, Gu SQ, Gidley D, Peng H