Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.17, No.5 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (72 articles)

1897 - 1902	Plane-view observation technique of silicon nanowires by transmission electron microscopy Tsutsumi T, Suzuki E, Ishii K, Kanemaru S, Maeda T, Tomizawa K
1903 - 1905	Study of growth process of germanium nanocrystals using a grazing incidence x-ray diffraction method Ninomiya H, Itoh N, Rath S, Nozaki S, Morisaki H
1906 - 1911	Surface-adsorbed polystyrene spheres as a template for nanosized metal particle formation: Optical properties of nanosized Au particle Takei H
1912 - 1918	Role of embedded titanium nanoparticles for enhanced chemical vapor deposition diamond formation on silicon Shima R, Chakk Y, Folman M, Hoffman A, Lai F, Prawer S
1919 - 1922	Fabrication of microdiamond array and electrical characterization of individual diamond microcrystals based on scanning probe microscopy Sugimura H, Ushiyama K, Sato Y, Takai O, Sakamoto Y, Takaya M, Nakagiri N
1923 - 1929	Time-of-flight high-mass spectrometer observation of large size Nb clusters toward assembling of size controlled clusters Hihara T, Sumiyama K
1930 - 1934	Surface potential of ferroelectric thin films investigated by scanning probe microscopy Chen XQ, Yamada H, Horiuchi T, Matsushige K, Watanabe S, Kawai M, Weiss PS
1935 - 1940	Atomic force microscopy of oxidative coupling reactions of phenols with FeCl3 in the solid state Zeng QD, Wang C, Bai CL, Zeng PJ, Li Y, Yan XJ
1941 - 1945	High-resolution imaging of single-stranded DNA on mica surface under ultrahigh vacuum conditions by noncontact atomic force microscopy Matsumoto T, Maeda Y, Naitoh Y, Kawai T
1946 - 1953	Use of the Schiller decapitation process for the manufacture of high quality tungsten scanning tunneling microscopy tips de Raad GJ, Koenraad PM, Wolter JH
1954 - 1958	Novel scanning near-field optical microscopy/atomic force microscope probes by combined micromachining and electron-beam nanolithography Zhou H, Midha A, Bruchhaus L, Mills G, Donaldson L, Weaver JMR
1959 - 1969	Three behavioral states observed in field emission from single-walled carbon nanotubes Dean KA, von Allmen P, Chalamala BR
1970 - 1986	Field emission properties of nanocrystalline chemically vapor deposited-diamond films Groning O, Kuttel OM, Groning P, Schlapbach L
1987 - 1992	Simulation of thermionic emission from aluminum gallium nitride cathodes at elevated temperatures Hatfield CW, Bilbro GL
1993 - 1996	Cold cathode field emitter array on a quadrupole mass spectrometer: Route to miniaturization Felter TE
1997 - 2000	Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy Wang JS, Lin HH
2001 - 2004	In situ preparation of the semiconductor-superconductor interface: Nb contacts on InAs quantum wells Bellomi G, Mitchell WJ, Hu EL
2005 - 2008	Luminescence properties of CdS quantum dots on ZnSe Kobayashi M, Nakamura S, Kitamura K, Umeya H, Jia A, Yoshikawa A, Shimotomai M, Kato Y, Takahashi K
2009 - 2014	Practical aspects of solid source molecular beam epitaxial growth of phosphorus-containing films Hoke WE, Lemonias PJ
2015 - 2018	Oxygen implant isolation of n-GaN field-effect transistor structures Dang G, Cao XA, Ren F, Pearton SJ, Han J, Baca AG, Shul RJ
2019 - 2024	More exact method of determination of the trap concentration of deep levels: Application to molecular beam epitaxy-grown, low temperature GaAs Halder NC, Zhao X
2025 - 2029	Microscopic description of electronic structure and scattering in disordered antimonide-based heterostructures Shaw MJ, Hagon JP, Corbin EA, Jaros M
2030 - 2033	Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts Shiojima K, Woodall JM, Eiting CJ, Grudowski PA, Dupuis RD
2034 - 2039	Plasma nitridation of thin Si layers for GaAs dielectrics Wang Z, Diatezua DM, Park DG, Chen Z, Morkoc H, Rockett A
2040 - 2044	Rapid annealing study of neutron-irradiated GaAs by Rutherford backscattering spectrometry/channeling Liu J, Wang PX
2045 - 2049	Real time monitoring and control of wet etching of GaAs/Al0.3Ga0.7As using real time spectroscopic ellipsometry Cho SJ, Snyder PG
2050 - 2054	Via-hole etching for SiC Leerungnawarat P, Hays DC, Cho H, Pearton SJ, Strong RM, Zetterling CM, Ostling M
2055 - 2057	Fast, smooth, and anisotropic etching of SiC using SF6/Ar So MS, Lim SG, Jackson TN
2058 - 2060	Extreme ultraviolet emission of laser-produced plasmas using a cryogenic xenon target Schriever G, Bergmann K, Lebert R
2061 - 2069	Model etch profiles for ion energy distribution functions in an inductively coupled plasma reactor Chen WJ, Abraham-Shrauner B, Woodworth JR
2070 - 2073	Micromachined, reusable shadow mask for integrated optical elements grown by metalorganic chemical vapor deposition Peake GM, Zhang L, Li NY, Sarangan AM, Willison CG, Shul RJ, Hersee SD
2074 - 2083	Mesoscopic hemisphere arrays far use as resist in solid state structure fabrication Green M, Tsuchiya S
2084 - 2089	Application of development-free vapor photolithography in silicon nitride etching Hong XY, Duan SQ, Lu JP, Wang PQ, Chen YQ
2090 - 2096	Studies on the interfacial etching reaction of development-free vapor photolithography Hong XY, Lu JP, Duan SQ, Chen QD, Wang PQ
2097 - 2102	Control of photogenerated acid diffusion and evaporation by copolymerization with a basic monomer Kim JB, Kwon YG, Choi JH, Jung MH
2103 - 2108	Phantom exposures of chemically amplified resists caused by acids generated in environmental air in synchrotron radiation lithography Deguchi K, Nakamura J, Kawai Y, Nakanishi K, Okada I, Fukuda M, Oda M, Kochiya H
2109 - 2114	Control of spatial and transient temperature trajectories for photoresist processing El-Awady K, Schaper CD, Kailath T
2115 - 2121	Analysis of Joule heating in multilevel interconnects Shen YL
2122 - 2128	Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures Martensson P, Juppo M, Ritala M, Leskela M, Carlsson JO
2129 - 2135	Radio frequency plasma chemical vapor deposited thin films of diamond-like carbon/SiO2 nanocomposites by way of tetraethoxysilane Senkevich JJ, Leber DE, Tutor MJ, Heiks NA, Ten Eyck GA, Scherrer DW
2136 - 2146	Process integration induced thermodesorption from SiO2/SiLK resin dielectric based interconnects Baklanov MR, Muroyama M, Judelewicz M, Kondoh E, Li H, Waeterloos J, Vanhaelemeersch S, Maex K
2147 - 2152	Effects of surface topography on oxide deposition rates using TEOS/O-2 chemistry Doyle JR, Feng GFJ
2153 - 2162	Deuterium sintering of silicon-on-insulator structures: D diffusion and replacement reactions at the SiO2/Si interface Wallace RM, Chen PJ, Archer LB, Anthony JM
2163 - 2171	Si single-electron tunneling transistor with nanoscale floating dot stacked on a Coulomb island by self-aligned process Nakajima A, Futatsugi T, Kosemura K, Fukano T, Yokoyama N
2172 - 2177	Mechanical response of thin films with helical microstructures Seto MW, Robbie K, Vick D, Brett MJ, Kuhn L
2178 - 2181	Study of local stress using stress-absorbing Si diaphragm Zheng DW, Wang XH, Shyu K, Chang CT, Guo Y, Sarihan V, Wen WJ, Tu KN
2182 - 2185	Characterization of (Ba1-x,Sr-x)TiO3 thin films deposited on Pt/Ti/SiO2/Si substrates with different Ti buffer layer thicknesses Lee JC, Yoon SG
2186 - 2190	Ion beam deposition of permanent magnet layers for liftoff processes Hegde H, Wang JS, Devasahayam AJ, Kanarov V, Hayes A, Yevtukhov R, Bozeman S, Anderson P, Tabat N, Ryan P
2191 - 2192	Determination of silicon oxide layer thickness by time-of-flight secondary ion mass spectroscopy Brox O, Iltgen K, Hellweg S, Benninghoven A
2193 - 2193	Low temperature metalorganic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization (vol B17, pg 1101, 1999) Kelsey JE, Goldberg C, Nuesca G, Peterson G, Kaloyeros AE, Arkles B
2196 - 2196	Microelectronics and nanometer structures - Processing, measurement, and phenomena - Preface Givens JH, Cale TS
2197 - 2203	Characteristics of chemically vapor deposited TiN films prepared using tetrakis-ethylmethyl-amido-titanium Kim DH, Lim GT, Kim SK, Park JW, Lee JG
2204 - 2209	Reactive ion etch of patterned and blanket silver thin films in Cl-2/O-2 and O-2 glow discharges Nguyen P, Zeng YX, Alford TL
2210 - 2215	Quantitative study of chemical mechanical planarization process affected by bare silicon wafer front surface topography Xu CS, Liu J, Xia Y
2216 - 2221	Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing Trabzon L, Awadelkarim OO, Werking J
2222 - 2225	Ultrathin oxide films deposited using electron cyclotron resonance sputter Amazawa T, Ono T, Shimada M, Matsuo S, Oikawa H
2226 - 2238	Growth characterization of rapid thermal oxides Lai WH, Li MF, Chan L, Chua TC
2239 - 2242	Effects of ramp-up rates on the salicide process Tan CC, Lu L, Chen SY, Shen ZX, See A, Chan LH, Chua LH, Chan TKL
2243 - 2247	Selectivity to silicon nitride in chemical vapor deposition of titanium silicide Maa JS, Howard DJ, He SS, Tweet DJ, Stecker L, Stecker G, Hsu ST
2248 - 2255	Minimization of chemical-mechanical planarization (CMP) defects and post-CMP cleaning Zhang LM, Raghavan S, Weling M
2256 - 2261	Gap-filling property of Cu film by chemical vapor deposition Kobayashi A, Sekiguchi A, Koide T, Okada O, Zhang M, Egami A, Sunayama H
2262 - 2271	Selectivity switch concept in Cu chemical mechanical planarization and its implementation on orbital tools Gotkis Y, Alamgir S, Yang L, Dai F, Mitchell F, Nguyen J, Shumway L, Walesa LR, Yang J, Nunan P, Holland K
2272 - 2276	High density plasma deposited phosphosilicate glass as pre-metal dielectrics for advanced self-aligned contacts in sub 0.25 mu m device technology Yu JYE, Qiao JM, Jin B, Gopalan P, Feng JG
2277 - 2283	Metal silicides synthesized by high current metal-ion implantation Liu BX, Gao KY, Zhu HN
2284 - 2289	Spectroscopic ellipsometry investigation of silicide formation by rapid thermal process Hu YZ, Tay SP
2290 - 2293	Plasma doping for shallow junctions Goeckner MJ, Felch SB, Fang Z, Lenoble D, Galvier J, Grouillet A, Yeap GCF, Bang D, Lin MR
2294 - 2299	Optimizing Pd-Ge ohmic contact to GaAs through microstructure control Radulescu F, McCarthy JM
2357 - 2360	Nondestructive technique for the characterization of deep traps at interlayer interfaces in thin-film multilayer semiconductor structures Gonzalez-Hernandez J, Prokhorov E, Gorev NB, Kodzhespirova IF, Kovalenko YA
2361 - 2365	Critical influence of plating bath temperature on Cu damascene electrodeposits Jiang QT, Mikkola R, Carpenter B
2366 - 2372	Characterization of organic solution deposited copper seed layers on Al(Cu) sputtered thin films O'Keefe MJ, Leedy KD, Grant JT, Fang M, Gu H, O'Keefe TJ
2373 - 2377	Development of self-aligned contact technology for 0.18 mu m static random access memory devices Qiao JM, Jin B, Phatak P, Yu JY, Geha S
2378 - 2384	Optical endpoint detection for chemical mechanical planarization Bibby T, Adams JA, Holland K