1 - 16 |
Chemical vapour deposition of polycrystalline A1N films from AlCl3-NH3 mixtures. Analysis and modelling of transport phenomena Dollet A, Casaux Y, Chaix G, Dupuy C |
17 - 22 |
Study of grain growth of polysilicon formed by nickel-induced-lateral-crystallization of amorphous silicon and subsequent high temperature annealing Qin M, Poon MC, Fan LJ, Chan M, Yuen CY, Chan WY |
23 - 29 |
A comparison of Ti/Pt and TiN/Pt electrodes used with ferroelectric SrBi2Ta2O9 films Watts BE, Leccabue F, Guerri S, Severi M, Fanciulli M, Ferrari S, Tallarida G, Morandi C |
30 - 39 |
Dielectric and ferroelectric response of sol-gel derived Pb0.85La0.15TiO3 ferroelectric thin films on different bottom electrodes Bhaskar S, Majumder SB, Dobal PS, Krupanidhi SB, Katiyar RS |
40 - 45 |
Structural properties of magnetron sputtered ZnO films with incorporated iron Zhang M, Cao LM, Xu FF, Bando Y, Wang WK |
46 - 53 |
Synthesis and thermal decomposition of carbon nitride films prepared by nitrogen ion implantation into graphite Deng ZW, Souda R |
54 - 63 |
Effect of polymerization conditions of pyrrole on formation, structure and properties of high gas separation thin polypyrrole films Andreeva DV, Pientka Z, Brozova L, Bleha M, Polotskaya GA, Elyashevich GK |
64 - 69 |
Pore structure, barrier layer topography and matrix alumina structure of porous anodic alumina film Sui YC, Cui BZ, Martinez L, Perez R, Sellmyer DJ |
70 - 74 |
Effect of substrate holder boundaries on reproducibility of bias-enhanced diamond nucleation Sharda T, Soga I, Jimbo T, Umeno M |
75 - 78 |
Correlation between the opto-electronic and structural parameters of amorphous semiconductors Basa DK |
79 - 86 |
Defects and morphology of tungsten trioxide thin films LeGore LJ, Lad RJ, Moulzolf SC, Vetelino JF, Frederick BG, Kenik EA |
87 - 92 |
Multilayer TiN/Ti films for high-temperature annealing of GaAs Yokota K, Nakamura K, Satho M, Takano H |
93 - 97 |
Chemical bath deposition of BiVO4 Neves MC, Trindade T |
98 - 102 |
Characterization of carbon-boronnitride-coatings prepared with chemical vapor deposition by auger electron spectroscopy, electron probe microanalysis and secondary ion mass spectrometry Gammer K, Kolber T, Piplits K, Nowikow K, Tang X, Haubner R, Hutter H |
103 - 112 |
Fixed polarizer, rotating-polarizer and fixed analyzer spectroscopic ellipsometer: accurate calibration method, effect of errors and testing Naciri AE, Broch L, Johann L, Kleim R |
113 - 117 |
Dielectric enhancement of sol-gel derived BaTiO3/SrTiO3 multilayered thin films Xu R, Shen MR, Ge SB, Gan ZQ, Cao WW |
118 - 131 |
Chemical vapour deposition of polycrystalline AlN films from AlCl3-NH3 mixtures: II - surface morphology and mechanisms of preferential orientation at low-pressure Dollet A, Casaux Y, Matecki M, Rodriguez-Clemente R |
132 - 137 |
Selective deposition of anatase and rutile films by KrF laser chemical vapor deposition from titanium isopropoxide Watanabe A, Tsuchiya T, Imai Y |
138 - 144 |
Growth and microhardness of SiC films by plasma-enhanced chemical vapor deposition Seo JY, Yoon SY, Niihara K, Kim KH |
145 - 150 |
An investigation of tin oxide plasma-enhanced chemical vapor deposition using optical emission spectroscopy Robbins JJ, Alexander RT, Xiao W, Vincent TL, Wolden CA |
151 - 158 |
Correlation between bulk morphology and luminescence in porous silicon investigated by pore collapse resulting from drying Mason MD, Sirbuly DJ, Buratto SK |
159 - 163 |
Effects of nitrogen flow rates on the growth morphology of TiA1N films prepared by an rf-reactive sputtering technique Chakrabarti K, Jeong JJ, Hwang SK, Yoo YC, Lee CM |
164 - 173 |
Characterization of annealed pulsed laser deposited (PLD) thin films of cesium oxythiomolybdate (CS2MOOS3) Strong KL, Zabinski JS |
174 - 184 |
Tribology of pulsed laser deposited thin films of cesium oxythiomolybdate (CS2MoOS3) Strong KL, Zabinski JS |
185 - 189 |
X-Ray diffraction measurement of Poisson's ratio in Mo sublayers of Ni/Mo multilayers Villain P, Renault PO, Goudeau P, Badawi KF |
190 - 194 |
Atomic force microscopy study of the morphological shape of thin film buckling Coupeau C |
195 - 199 |
Effects of mechanical stress on polycrystalline-silicon resistors Nakabayashi M, Ohyama H, Simoen E, Ikegami M, Claeys C, Kobayashi K, Yoneoka M, Miyahara K |
200 - 203 |
Leakage current of (Ba0.5Sr0.5)TiO3 thin film prepared by pulsed-laser deposition Yan F, Chan HLW, Choy CL, Wu WB, Wang YN |
204 - 209 |
Influence of bath chemistry on zincate morphology on aluminum bond pad Qi G, Chen X, Shao Z |
210 - 214 |
Thermally induced stress voids in hermetically carbon-coated optical fibers with different coating thickness Shiue ST, He JL, Pan LY, Huang ST |
215 - 218 |
Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition Ohshita Y, Ogura A, Hoshino A, Hiiro S, Suzuki T, Machida H |
219 - 223 |
Zincating morphology of aluminum bond pad: its influence on quality of electroless nickel bumping Qi GJ, Fokkink LGJ, Chew KH |
224 - 227 |
Preparation of oxycarbonate (BaxSr1-x)(2)CuO2(CO3) epitaxial films by molecular beam epitaxy Adachi Y, Sakaguchi I, Haneda H, Takahashi K |
228 - 232 |
Spreading monolayers and Langmuir-Blodgett films of a novel type of optically active macrocyclic poly(ether sulfone)s containing 1,1'-bi-2-naphthol moiety Gong AJ, Liu YH, Liu MH, Xi F |
233 - 240 |
Langmuir-Blodgett monolayers from lower generation amphiphilic monodendrons Peleshanko S, Sidorenko A, Larson K, Villavicencio O, Ornatska M, McGrath DV, Tsukruk VV |
241 - 249 |
Adsorption and aggregation of glycosylphosphatidyl inositol (GPI) anchored alkaline phosphatase on methylated glass surfaces studied by tapping mode atomic force microscopy Rieu JP, Ronzon F, Roux B |
250 - 254 |
Studies on Ge/CeO2 thin film system using positron beam and Raman spectroscopy Rao GV, Amarendra G, Viswanathan B, Kanakaraju S, Balaji S, Mohan S, Sood AK |
255 - 261 |
Fabrication and characterization of a new planar solid-state reference electrode for ISFET sensors Huang IY, Huang RS |
262 - 267 |
Study on bis[phthalocyaninato] praseodymium complex/silicon hybrid chemical field-effect transistor gas sensor Xie D, Jiang YD, Pan W, Jiang JH, Wu ZM, Li YR |
268 - 274 |
Thermal stability of electrode stacks for application in oxide film devices Song ZT, Chong N, Chan LWHW, Choy CL, Lin CL |
275 - 281 |
Investigation of diamond-like carbon films synthesized by multi-jet hollow cathode rf plasma source Fedosenko G, Korzec D, Engemann J, Lyebyedyev D, Scheer HC |
282 - 285 |
The grain size effect of Pb(Zr0.3Ti0.7)O-3 thin films Yan F, Bao P, Chan HLW, Choy CL, Wang YN |
286 - 293 |
High temperature stability of indium tin oxide thin films Gregory OJ, Luo Q, Crisman EE |
294 - 298 |
Electrical and structural properties of copper films annealed on Si(111) Bruggemann M, Masten A, Wissmann P |
299 - 301 |
Annealing of amorphous Ir18Si15O67 films in dry oxygen Giauque PH, Cherry HB, Nicolet MA, Bernard C, Pisch A |
302 - 302 |
Study of C-N binding states in carbon nitride films deposited by reactive XeCl laser ablation (vol 347, pg 72, 1999) D'Anna E, De Giorgi ML, Luches A, Martino M, Perrone A, Zocco A |