Journal of Crystal Growth

Journal of Crystal Growth, Vol.236, No.1-3 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (70 articles)

1 - 4	Jan Czochralski - father of the Czochralski method Tomaszewski PE
5 - 9	Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma-assisted pulsed laser deposition Bhattacharya P, Sharma TK, Singh S, Ingale A, Kukreja LM
10 - 20	SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition Hartmann JM, Loup V, Rolland G, Holliger P, Laugier F, Vannuffel C, Semeria MN
21 - 25	Organometallic vapor phase epitaxy of GaN on Si(111) with a gamma-Al2O3(111) epitaxial intermediate layer Wakahara A, Oishi H, Okada H, Yoshida A, Koji Y, Ishida M
26 - 30	Ab initio study of silicon etching by atomic hydrogen: influences of germanium and carbon impurities Hiraoka YS
31 - 36	Epitaxial growth of InGaAs on misoriented GaAs(100) substrate by metal-organic vapor phase epitaxy Takano Y, Masuda M, Kobayashi K, Kuwahara K, Fuke S, Shirakata S
37 - 40	Formation of epitaxially ordered SiO2 in oxygen-implanted silicon during thermal annealing Shimura T, Hosoi T, Fukuda K, Umeno M, Ogura A
41 - 45	Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample da Silva MJ, Quivy AA, Gonzalez-Borrero PP, Marega E
46 - 50	Nitrogen effect on grown-in defects in Czochralski silicon crystals Umeno S, Ono T, Tanaka T, Asayama E, Nishikawa H, Hourai M, Katahama H, Sano M
51 - 58	In-situ HRTEM observation of the melting-crystallization process of silicon Nishizawa H, Hori F, Oshima R
59 - 65	High temperature growth of InN on GaP(111)B substrate using a new two-step growth method Bhuiyan AG, Yamamoto A, Hashimoto A, Ito Y
66 - 70	Pre-treatment of GaN template for homoepitaxial growth by radio-frequency molecular beam epitaxy Kubo S, Nanba Y, Okazaki T, Manabe S, Kurai S, Taguchi T
71 - 76	Regular arrays of GaN nanorods Li ZJ, Chen XL, Li HJ, Xu YP
77 - 84	Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer Lu Y, Liu XL, Lu DC, Yuan HR, Chen Z, Fan TW, Li YF, Han PD, Wang XH, Wang D, Wang ZG
85 - 89	Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si Liao MY, Meng XM, Zhou XT, Hu JQ, Wang ZG
90 - 94	Effects of As pressure on optical features of low-temperature grown GaAs/AlGaAs multiple quantum wells Han YJ, Guo LW, Bao CL, Huang Q, Zhou JM
95 - 100	Rapid relaxation of crystallographic anisotropy in SiO2-removed lateral epitaxial overgrown GaN layers Kim MH, Choi YH, Yi JH, Yang M, Jeon J, Khym SW, Leem SJ
101 - 112	Nitrogen doping of epitaxial silicon carbide Forsberg U, Danielsson O, Henry A, Linnarsson MK, Janzen E
113 - 118	Effects of thermal convection of NH3 during growth of GaN epitaxial layers by horizontal MOCVD reactor Choi DK, Lee CY, Lee CR
119 - 124	Control of hillock formation during MOVPE growth of HgCdTe by suppressing the pre-reaction of the Cd precursor with Hg Suh SH, Kim JS, Kim HJ, Song JH
125 - 131	In-situ monitoring system of the position and temperature at the crystal-solution interface Sazaki G, Azuma Y, Miyashita S, Usami N, Ujihara T, Fujiwara K, Murakami Y, Nakajima K
132 - 136	InGaP lattice-mismatched LPE growth on GaAs substrates by epitaxial lateral overgrowth technique Nakayama S, Kaneko M, Aizawa S, Kashiwa K, Takahashi NS
137 - 140	Influence of lattice mismatch on hydrogen incorporation into C-doped In0.53Ga0.47As grown by metalorganic chemical vapor deposition Watanabe N, Kobayashi T
141 - 144	Nanofabrication of grid-patterned substrate by holographic lithography Huang CJ, Zhu XP, Li C, Zuo YH, Cheng BW, Li DZ, Luo LP, Yu JZ, Wang QM
145 - 154	InAs/GaAs(100) self-assembled quantum dots: Arsenic pressure and capping effects Riel BJ, Hinzer K, Moisa S, Fraser J, Finnie P, Piercy P, Fafard S, Wasilewski ZR
155 - 164	Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates Nosho BZ, Bennett BR, Aifer EH, Goldenberg M
165 - 170	Preparation and photoluminescence characterization of high-purity CdTe single crystals: Purification effect of normal freezing on tellurium and cadmium telluride Song SH, Wang J, Isshiki M
171 - 175	Nucleation behavior of silicon carbide whiskers grown by chemical vapor deposition Leu IC, Hon MH
176 - 180	Growth of diamond films on grooved Si substrates Yamamoto H, Naoi Y, Shintani Y
181 - 190	The variation of the equilibrium of chemical reactions in the process of (Bi2Te3)(Sb2Te3)(Sb2Se3) crystal growth Sokolov OB, Skipidarov SY, Duvankov NI
191 - 196	The growth and absorption characterization of Cr, Ca : YAG by liquid-phase epitaxy Rao HB, Cheng JB, Huang ZL, Gao T, Gong HR
197 - 209	Temperature reduction of theta- to alpha-phase transformation induced by high-pressure pretreatments of nano-sized alumina powders derived from boehmite Yen FS, Wang MY, Chang JL
210 - 216	Crystal growth and characterization of new high Curie temperature (1-x)BiScO3-xPbTiO(3) single crystals Zhang SJ, Lebrun L, Rhee S, Eitel RE, Randall CA, Shrout TR
217 - 220	Elaboration of Bi2Se3 by metalorganic chemical vapour deposition Giani A, Al Bayaz A, Foucaran A, Pascal-Delannoy F, Boyer A
221 - 224	Low-temperature growth conditions of YBa2Cu3O7-delta using Ba-Cu-Ag-O-F solvent Yamada Y, Suga T, Hirabayashi I
225 - 238	Epitaxial growth of SiC in a chimney CVD reactor Ellison A, Zhang J, Henry A, Janzen E
239 - 247	Morphology and dielectric properties of Ba0.5Sr0.5TiO3 thin films on annealed (100) MgO Cukauskas EJ, Kirchoefer SW, Chang W
248 - 252	Fabrication of lead zirconate titanate thin films using a diffusion process of lead zirconate and lead titanate multilayer films Iijima T, He G, Funakubo H
253 - 256	Growth of CuInS2 crystals by a hot-press method Komaki H, Yoshino K, Sato S, Yoneta M, Akaki Y, Ikari T
257 - 260	Crystal growth of AgIn1-XGaXSe2 crystals grown by a vertical gradient freeze method Yoshino K, Komaki H, Itani K, Chichibu SF, Akaki Y, Ikari T
261 - 266	Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process Tan LW, Zan YD, Wang J, Wang QY, Yu YH, Wang SR, Liu ZL, Lin LY
267 - 272	Effect of excessive amount of Cd(II) cations on surface morphology of prismatic {110} faces of cadmium mercury thiocyanate crystals Jiang XN, Xu D, Yuan DR, Sun DL, Lu MK
273 - 280	Alloy composition dependence in selective area epitaxy on InP substrates Greenspan JE
281 - 289	Behaviors of trace amounts of metal-fluoride impurities in CaF2 single-crystal grown by Stockbarger's method Yonezawa T, Matsuo K, Tamada H, Kawamoto Y
290 - 296	Growth of alpha-BaB2O4 single crystals from melts at various compositions: comparison of optical properties Solntsev VP, Tsvetkov EG, Gets VA, Antsygin VD
297 - 304	Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature Syvajarvi M, Yakimova R, Janzen E
305 - 310	Single crystals of Tb0.3Dy0.7Fe2 grown by Czochralski method with cold crucible Chen JL, Gao SX, Wang WH, Zhang M, Wu GH, Li YX, Qu JP, Xu GZ
311 - 317	Initial growth of hexagonal GaN grown on an Si(111) substrate coated with an ultra-thin SiC buffer layer Wang D, Yoshida S, Ichikawa M
318 - 322	Growth and characterization of a new nonlinear optical mixed borate crystal Bhat SI, Rao PM, Upadyaya V, Nagaraja HS
323 - 332	Controlling factors and mechanism of reactive crystallization of calcium carbonate polymorphs from calcium hydroxide suspensions Kitamura M, Konno H, Yasui A, Masuoka H
333 - 346	The growth, morphology and perfection of fluoranthene crystals grown from supercooled chlorine derivative solutions on spontaneously formed seeds Marciniak B
347 - 356	Density and ultrasonic velocity of undersaturated and supersaturated solutions of fluoranthene in trichloroethylene, and study of their metastable zone width Marciniak B
357 - 362	Solvothermal growth of vaterite in the presence of ethylene glycol, 1,2-propanediol and glycerin Li Q, Ding Y, Li FQ, Xie B, Qian YT
363 - 370	The effect of aminoacids on the crystal growth of calcium carbonate Manoli F, Kanakis J, Malkaj P, Dalas E
371 - 375	Sol-gel preparation of Ge nanocrystals embedded in SiO2 glasses Yang HQ, Wang XJ, Shi HZ, Wang FJ, Gu XX, Yao X
376 - 380	Growth of nonlinear optical gamma-glycine crystals Bhat MN, Dharmaprakash SM
381 - 392	Growth and characterization of NMBA (4-nitro-4'-methyl benzylidene aniline) single crystals Srinivasan K, Biravaganesh R, Gandhimathi R, Ramasamy P
393 - 399	Effect of borax on the crystallization kinetics of boric acid Sahin O
400 - 406	Crystallization kinetics of epsomite influenced by pH-value and impurities Al-Jibbouri S, Strege C, Ulrich J
407 - 412	Growth of semicarbazone of benzophenone single crystals Vijayan N, Babu RR, Gopalakrishnan R, Dhanuskodi S, Ramasamy P
413 - 419	The determination of solute distribution during growth and dissolution of NaClO3 crystals: the growth of large crystals Chen WC, Liu DD, Ma WY, Xie AY, Fang J
420 - 428	Dendritic morphologies of directionally solidified single crystals along different crystallographic orientations Ding GL, Tewari SN
429 - 433	Hybrid model simulation of the cluster deposition process Hongo K, Mizuseki H, Kawazoe Y, Wille LT
434 - 440	In situ monitoring of growth of ice from supercooled water by a new electromagnetic method Shibkov AA, Golovin YI, Zheltov MA, Korolev AA, Leonov AA
441 - 454	Crystal structural control on surface topology and crystal morphology of normal spinel (MgAl2O4) Dekkers R, Woensdregt CF
455 - 465	Development of a thermal stress analysis system for anisotropic single crystal growth Miyazaki N
466 - 476	Synthesis and characterisation of boron carbide whiskers and thin elongated platelets Carlsson M, Garcia-Garcia FJ, Johnsson M
477 - 481	Single-crystal growth of the Al-Cu-Ru icosahedral quasicrystal from the ternary melt Guo JQ, Hasegawa H, Tsai AP, Takeuchi S
482 - 498	Modeling of free dendritic growth of succinonitrile-acetone alloys with thermosolutal melt convection Li Q, Beckermann C
499 - 499	Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots (vol 234, pg 354, 2001) Jia R, Jiang DS, Liu HY, Wei YQ, Xu B, Wang ZG