| 학회 | 한국재료학회 |
| 학술대회 | 2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 | 23권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | The effect of plasma treatment during deposition process on remote plasma atomic layer deposited silicon nitride for charge trap layer |
| 초록 | Continuous shrinking of the feature size of device makes conventional floating gate NAND flash memory faced reliability problems such as cell to cell interference, decrease of charge loss tolerance, and vulnerability of stress induced leakage current. To overcome above mentioned problems, 3D NAND flash memory has been developed. In 3D NAND flash memory, material of charge storage is silicon nitride (SiNx) and main trend of increasing memory density is not scaling down but stacking layers. However, as more layers stack up, aspect ratio of charge trap stacks increases. In first generation of 3D NAND, it has 24 layers and it shows 40:1 aspect ratio. Next generation of 3D NAND is expected that it has aspect ratio higher than 80:1. Therefore, there are demands of deposition technology with high step coverage. Among various deposition methods, atomic layer deposition (ALD) is considered that it has the best high step coverage ability. ALD reaction is self-limited, and therefore it enables to deposit thin film with precise thickness control (atomic layer) and high step coverage. Particularly, remote plasma ALD (RPALD) is very good deposition method due to enhancing the reactivity between precursor and reactant gas with minimizing plasma damage. However, SiNx ALD shows the lower defect density than conventional LPCVD SiNx. Because defect density is strongly related to device performance and reliability, it is very important and it should be higher than 5*1019/cm3 In this study, we developed SiNx with RPALD using bis(dimethylaminomethylsilyl)-trimethylsilyl amine (C9H29N3Si3, DTDN2-H2) and N2 remote plasma as the precursor and reactant gas, respectively. Various plasma treatments were performed during deposition process to satisfy above mentioned level of defect density and we investigated the effect of plasma treatment during deposition process on the properties of SiNx thin film. |
| 저자 | 장우출, 김현정, 권영균, 신석윤, 임희우, 정찬원, 조해원, 전형탁 |
| 소속 | 한양대 |
| 키워드 | silicon nitride; ALD; plasma treatment |
