Solar Energy Materials and Solar Cells

Solar Energy Materials and Solar Cells, Vol.66, No.1-4 Entire volume, number list

ISSN: 0927-0248 (Print)

In this Issue (80 articles)

1 - 9	Characterization of crystalline silicon grown by plasma-enhanced CVD for thin-film solar cells Kurobe K, Fuyuki T, Matsunami H
11 - 15	Impact and options for boron diffusions in buried contact solar cells Slade AM, Honsberg CB, Wenham SR
17 - 25	The use of silicon nitride in buried contact solar cells Vogl B, Slade AM, Pritchard SC, Gross M, Honsberg CB, Cotter JE, Wenham S
27 - 36	24.5% efficiency PERT silicon solar cells on SEH MCZ substrates and cell performance on other SEH CZ and FZ substrates Zhao J, Wang AH, Green MA
37 - 44	Experiments on anisotropic etching of Si in TMAH You JS, Kim D, Huh JY, Park HJ, Pak JJ, Kang CS
45 - 50	High current, thin silicon-on-ceramic solar cell Barnett AM, Rand JA, Hall RB, Bisaillon JC, DelleDonne EJ, Feyock BW, Ford DH, Ingram AE, Mauk MG, Yaskoff JP, Sims PE
51 - 59	Effect of light degradation on bifacial Si solar cells Ohtsuka H, Sakamoto M, Koyama M, Muramatsu S, Yazawa Y, Warabisako T, Abe T, Saitoh T
61 - 71	Charge transport in microcrystalline Si - the specific features Kocka J, Fejfar A, Fojtik P, Luterova K, Pelant I, Rezek B, Stuchlikova H, Stuchlik J, Svrcek V
73 - 84	Microcrystalline/micromorph silicon thin-film solar cells prepared by VHF-CD technique Meier J, Vallat-Sauvain E, Dubail S, Kroll U, Dubail J, Golay S, Feitknecht L, Torres P, Fay S, Fischer D, Shah A
85 - 94	Towards large-area, high-efficiency a-Si/a-SiGe tandem solar cells Okamoto S, Maruyama E, Terakawa A, Shinohara W, Nakano S, Hishikawa Y, Wakisaka K, Kiyama S
95 - 105	Mass-production of large size a-Si modules and future plan Tawada Y, Yamagishi H
107 - 115	Production technology for amorphous silicon-based flexible solar cells Ichikawa Y, Yoshida T, Hama T, Sakai H, Harashima K
117 - 125	Cost effective and high-performance thin film Si solar cell towards the 21st century Yamamoto K, Yoshimi M, Tawada Y, Okamoto Y, Nakajima A
127 - 136	Formation of stable Si network at low T-s by controlling chemical reaction at growing surface Shimizu I
137 - 145	Spatial distribution of high-density microwave plasma for fast deposition of microcrystalline silicon film Shirai H, Sakuma Y, Yoshino K, Ueyama H
147 - 153	Modeling charge-carrier transport and generation-recombination mechanisms in p(+)n(+) a-Si tunnel junctions Furlan J, Gorup Z, Smole F, Topic M
155 - 162	Wide optical band gap window layers for solar cells Yu ZR, Pereyra I, Carreno MNP
163 - 170	Performance of p-type silicon-oxide windows in amorphous silicon solar cell Matsumoto Y, Melendez F, Asomoza R
171 - 177	Kelvin probe measurements of microcrystalline silicon on a nanometer scale using SFM Breymesser A, Schlosser V, Peiro D, Voz C, Bertomeu J, Andreu J, Summhammer J
179 - 185	Effect of halogen additives on the stability of a-Si : H films deposited at a high-growth rate Nishimoto T, Takagi T, Kondo M, Matsuda A
187 - 193	Characterisation of light trapping in silicon films by spectral photoconductance measurements Campbell P, Keevers M, Vogl B
195 - 201	The influence of doping on charge carrier transport in a-Si : H Herm D, von Aichberger S, Kunst M
203 - 207	A large discrepancy between CPM and ESR defect densities in light-soaked a-Si : H Shimizu T, Sugiyama H, Kumeda M
209 - 215	Application of real-time in situ spectroscopic ellipsometry and infrared spectroscopy for characterizing interface structure of a-Si : H layer Fujiwara H, Toyoshima Y, Kondo M, Matsuda A
217 - 223	High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma Fukawa M, Suzuki S, Guo LH, Kondo M, Matsuda A
225 - 230	High-rate deposition of polycrystalline silicon thin films by hot wire cell method using disilane Ichikawa M, Tsushima T, Yamada A, Konagai M
231 - 237	A new perspective on the characterization of materials for a-Si : H solar cells Jiao L, Niu X, Lu Z, Wronski CR, Matsuda A, Kamei T, Ganguly G
239 - 244	Role of hydrogen in hydrogenated microcrystalline silicon Itoh T, Yamamoto K, Harada H, Yamana N, Yoshida N, Inouchi H, Nonomura S, Nitta S
245 - 251	Absorption coefficient spectra of mu c-Si in the low-energy region 0.4-1.2 eV Kitao J, Harada H, Yoshida N, Kasuya Y, Nishio M, Sakamoto T, Itoh T, Nonomura S, Nitta S
253 - 258	The creation of hydrogen radicals by the hot-wire technique and its application for mu c-Si : H Harada H, Yoshida N, Yamamoto K, Itoh T, Inagaki K, Inouchi H, Yamana N, Aoki T, Nonomura S, Nitta S
259 - 265	Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition Masuda A, Niikura C, Ishibashi Y, Matsumura H
267 - 273	Amorphous and microcrystalline silicon solar cells prepared at high deposition rates using RF (13.56 MHz) plasma excitation frequencies Rech B, Roschek T, Muller J, Wieder S, Wagner H
275 - 281	Development of highly efficient thin film silicon solar cells on texture-etched zinc oxide-coated glass substrates Muller J, Kluth O, Wieder S, Siekmann H, Schope G, Reetz W, Vetterl O, Lundszien D, Lambertz A, Finger F, Rech B, Wagner H
283 - 288	High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD Endo K, Isomura M, Taguchi M, Tarui H, Kiyama S
289 - 295	Properties of amorphous silicon solar cells fabricated from SiH2Cl2 Shimizu S, Komaru T, Okawa K, Azuma M, Kamiya T, Fortmann CM, Shimizu I
297 - 303	Stability of a-Si : H solar cells deposited by Ar-treatment or by ECR techniques Ohkawa K, Shimizu S, Sato H, Komaru T, Futako W, Kamiya T, Fortmann CM, Shimizu I
305 - 311	Microstructure control of very thin polycrystalline silicon layers on glass substrate by plasma enhanced CVD Matsuura D, Kamiya T, Fortmann CM, Simizu I
313 - 320	In situ hydrogen plasma treatment for improved transport of (400) oriented polycrystalline silicon films Suemasu A, Nakahata K, Ro K, Kamiya T, Fortmann CM, Shimizu I
321 - 327	High-quality narrow gap (similar to 1.52 eV) a-Si : H with improved stability fabricated by excited inert gas treatment Sato H, Fukutani K, Futako W, Kamiya T, Fortmann CM, Shimizu I
329 - 335	Improved p-i-n solar cells structure for narrow bandgap a-Si : H prepared by Ar* chemical annealing at high temperatures Komaru T, Sato H, Futako W, Kamiya T, Fortmann CM, Shimizu I
337 - 343	High-rate deposition of hydrogenated amorphous silicon films using inductively coupled silane plasma Sakikawa N, Shishida Y, Miyazaki S, Hirose M
345 - 351	Thickness dependence of microcrystalline silicon solar cell properties Vetterl O, Lambertz A, Dasgupta A, Finger F, Rech B, Kluth O, Wagner H
353 - 359	Effect of front and back contact roughness on optical properties of single junction a-Si : H solar cells Zeman M, Van Swaaij RACMM, Zuiddam M, Metselaar JW, Schropp REI
361 - 367	Numerical modelling of trap-assisted tunnelling mechanism in a-Si : H and mu c-Si n/p structures and tandem solar cells Vukadinovic M, Smole F, Topic M, Krc J, Furlan J
369 - 374	Floating zone growth of beta-Ga2O3: A new window material for optoelectronic device applications Tomm Y, Ko JM, Yoshikawa A, Fukuda T
375 - 380	High-pressure plasma CVD for high-quality amorphous silicon Isomura M, Kondo M, Matsuda A
381 - 387	Characterization of pulsed laser crystallization of silicon thin film Ishigame S, Ozaki K, Sameshima T, Higashi S
389 - 395	Analysis of free-carrier optical absorption used for characterization of microcrystalline silicon films Sameshima T, Saitoh K, Aoyama N, Tanda M, Kondo M, Matsuda A, Higashi S
397 - 403	Microcrystalline n-i-p solar cells deposited at 10 angstrom/s by VHF-GD Feitknecht L, Kluth O, Ziegler Y, Niquille X, Torres P, Meier J, Wyrsch N, Shah A
405 - 412	Microcrystalline Si films deposited from dichlorosilane using RF-PECVD Guo LH, Kondo M, Matsuda A
413 - 419	More stable low gap a-Si : H layers deposited by PE-CVD at moderately high temperature with hydrogen dilution Ziegler Y, Daudrix V, Droz C, Platz R, Wyrsch N, Shah A
421 - 429	Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate Niikura C, Brenot R, Guillet J, Bouree JE, Kleider JP, Bruggemann R, Longeaud C
431 - 435	Epitaxial growth of polycrystalline films formed by microwave plasma chemical vapor deposition at low temperatures Andoh N, Kamisako K, Sameshima T, Saitoh T
437 - 441	Effect of film thickness on electrical property of microcrystalline silicon Andoh N, Hayashi K, Shirasawa T, Sameshima T, Kamisako K
443 - 452	An overview of thermophotovoltaic generation of electricity Coutts TJ
453 - 466	Recent developments in high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells: steps to next-generation PV cells Karam NH, King RR, Haddad M, Ermer JH, Yoon H, Cotal HL, Sudharsanan R, Eldredge JW, Edmondson K, Joslin DE, Krut DD, Takahashi M, Nishikawa W, Gillanders M, Granata J, Hebert P, Cavicchi BT, Lillington DR
467 - 477	Radiation-induced defects in solar cell materials Bourgoin JC, de Angelis N
479 - 486	Heteroepitaxial technologies of III-V on Si Kawanami H
487 - 494	ESA's space solar array technology programme current status and future activities Lisbona EF, Signorini C, Bogus KP
495 - 500	Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells de Angelis N, Bourgoin JC, Takamoto T, Khan A, Yamaguchi M
501 - 509	Temperature-dependent study of the radiative losses in double-quantum well solar cells Kluftinger B, Barnham K, Nelson J, Foxon T, Cheng T
511 - 516	High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched to Ge substrates Takamoto T, Agui T, Ikeda E, Kurita H
517 - 524	Characteristics of Al0.36Ga0.64As/GaAs tandem solar cells with pp(-)n(-)n structural AlGaAs solar cells Takahashi K, Yamada S, Minagawa Y, Unno T
525 - 532	Improved efficiency of Al0.36Ga0.64As solar cells with a pp(-)n(-)n structure Takahashi K, Minagawa Y, Yamada S, Unno T
533 - 540	Fabrication and simulation of GaSb thermophotovoltaic cells Sulima OV, Bett AW
541 - 550	Advanced III-V solar cell structures grown by MOVPE Bett AW, Adelhelm R, Agert C, Beckert R, Dimroth F, Schubert U
551 - 558	Development of both-side junction silicon space solar cells Tonomura Y, Hagino M, Washio H, Kaneiwa M, Saga T, Anzawa O, Aoyama K, Shinozaki K, Matsuda S
559 - 565	Characteristics of GaAs-based concentrator cells Araki K, Yamaguchi M, Takamoto T, Ikeda E, Agui T, Kurita H, Takahashi K, Unno T
567 - 571	Shadow protection for tandem solar cells in space Taylor SJ, Hardingham CM, Huggins CR, Kelt A, Wood S, Simpson J, Burrage J, Hayward A, Ginige R, Cross T, Clark C, Van der Zel V
573 - 578	Radiation resistance of MBE-grown GaInP/GaAs cascade solar cells flown onboard Equator-S satellite Haapamaa J, Pessa M, La Roche G
579 - 583	Analysis of energy balance of electricity and heat generated by TPV generators Amano T, Yamaguchi M
585 - 592	GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors Moto A, Tanaka S, Tanabe T, Takagishi S
593 - 598	Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application Akahori K, Wang G, Okumura K, Soga T, Jimbo T, Umeno M
599 - 605	A detailed study of H-2 plasma passivation effects on GaAs/Si solar cell Wang G, Ogawa T, Soga T, Jimbo T, Umeno M
607 - 614	High-quality thin film GaAs bonded to Si using SeS2 - A new approach for high-efficiency tandem solar cells Arokiaraj J, Okui H, Taguchi H, Soga T, Jimbo T, Umeno M
615 - 620	Progress toward high-efficiency (> 24%) and low-cost multi-junction solar cell production Chiang PK, Chu CL, Yeh YCM, Iles P, Ho F
621 - 630	High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics Carlin JA, Ringel SA, Fitzgerald A, Bulsara M
631 - 636	Improvement in photovoltaic conversion efficiency of InGaP solar cells grown on Si substrate by thermal cleaning using Si2H6 Goto S, Ueda T, Yamagishi C
637 - 644	High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios Agert C, Dimroth F, Schubert U, Bett AW, Leu S, Stolz W
645 - 653	Development and manufacturing of CIS thin film solar modules Karg FH