Journal of Crystal Growth

Journal of Crystal Growth, Vol.229, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (123 articles)

1 - 5	FZ-Si crystal growth and HREM study of new types of extended defects during in situ electron irradiation Fedina L, Gutakovskii A, Aseev A
6 - 10	Measurement of temperature gradient in Czochralski silicon crystal growth Huang XM, Taishi T, Wang TF, Hoshikawa K
11 - 16	Silicon crystals for future requirements of 300 mm wafers Dornberger E, Virbulis J, Hanna B, Hoelzl R, Daub E, von Ammon W
17 - 21	Growth of silicon crystal with a diameter of 400 mm and weight of 400 kg Shiraishi Y, Takano K, Matsubara J, Iida T, Takase N, Machida N, Kuramoto M, Yamagishi H
22 - 25	Photoelastic characterization of Si wafers by scanning infrared polariscope Fukuzawa M, Yamada M
26 - 30	Global simulation of the CZ silicon crystal growth up to 400 mm in diameter Takano K, Shiraishi Y, Matsubara J, Iida T, Takase N, Machida N, Kuramoto M, Yamagishi H
31 - 34	Development of crystal supporting system for diameter of 400 mm silicon crystal growth Iida T, Machida N, Takase N, Takano K, Matsubara J, Shiraishi Y, Kuramoto M, Yamagishi H
35 - 40	Growth of bulk GaN single crystals by the pressure-controlled solution growth method Inoue T, Seki Y, Oda O, Kurai S, Yamada Y, Taguchi T
41 - 47	Surface superstructures and optical properties of wurtzite GaN grown on 6H-SiC Xue QK, Xue QZ, Kuwano S, Nakayama K, Sakurai T, Tsong IST, Qiu XG, Segawa Y
48 - 52	Hexagonal GaN1-xPx growth by laser-assisted metalorganic chemical vapor deposition Kikawa J, Yoshida S, Itoh Y
53 - 57	Supersaturation-dependent step-behavior of InGaN grown by metal organic vapor phase epitaxy Kimura A, Futagawa N, Usui A, Mizuta M
58 - 62	Nanopipes in undoped AlGaN epilayers Kang JY, Tsunekawa S, Shen B, Mai ZH, Wang CY, Tsuru T, Kasuya A
63 - 68	AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD Shibata T, Asai K, Nakamura Y, Tanaka M, Kaigawa K, Shibata J, Sakai H
69 - 73	Growth and conductive type control of ZnSe single crystals by vertical Bridgman method Wang JF, Omino A, Isshiki M
74 - 78	Growth of large-diameter ZnTe single crystals by the vertical gradient freezing method Asahi T, Arakawa A, Sato K
79 - 86	Growth and characterization of Br-doped ZnSe single crystals grown by a vertical sublimation method Kato H, Udono H, Kikuma I
87 - 91	ZnSe growth from zinc chloride solvent by successive liquid phase epitaxy Tanaka A, Sukegawa T
92 - 97	Al diffused conductive ZnSe substrates grown by physical vapor transport method Namikawa Y, Fujiwara S, Kotani T
98 - 103	Variation of electrical properties on growth sectors of ZnO single crystals Sakagami N, Yamashita M, Sekiguchi T, Miyashita S, Obara K, Shishido T
XI - XI	Proceedings of the First Asian Conference on Crystal Growth and Crystal Technology Sendai, Japan, 29 August-1 September 2000 - Preface Fukuda T
104 - 108	Growth and characterization of ZnSe/BeTe superlattices Song JS, Chang JH, Cho MW, Hanada T, Yao T
109 - 113	Excitonic properties of Cd1-xMnxTe quantum wells grown by molecular beam epitaxy Debnath MC, Souma I, Takahashi M, Sato T, Pittini R, Sato F, Tanaka M
114 - 118	Lattice relaxation of a ZnO(0001) surface accompanied by a decrease in antibonding feature Maki H, Ichinose N, Ohashi N, Haneda H, Tanaka J
119 - 123	InP single crystal growth by the horizontal Bridgman method under controlled phosphorus vapor pressure Shimizu A, Nishizawa J, Oyama Y, Suto K
124 - 129	Growth of InxGa1-xAs bulk mixed crystals with a uniform composition by the rotational Bridgman method Ozawa T, Hayakawa Y, Balakrishnan K, Ohonishi F, Koyama T, Kumagawa M
130 - 136	High resolution electron density distribution determination for GaAs and CdTe Kajitani T, Saravanan R, Ono Y, Ohno K, Isshiki M
137 - 141	Epitaxial growth of semiconductors on SrTiO3 substrates Fujioka H, Ohta J, Katada H, Ikeda T, Noguchi Y, Oshima M
142 - 146	RHEED investigation of the formation process of InAs quantum dots on (100) InAlAs/InP for application to photonic devices in the 1.55 mu m range Koo BH, Hanada T, Makino H, Chang JH, Yao T
147 - 151	Doping method for GaAs molecular-layer epitaxy by adsorption control of impurity precursor Kurabayashi T, Kikuchi H, Hamano T, Nishizawa J
152 - 157	Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3 Kurabayashi T, Kono K, Kikuchi H, Nishizawa J, Esashi M
158 - 163	Optimization of circular trench geometry of GaAs(111)B substrates for growth of high quality InxGa1-xAs bridge layers Hayakawa Y, Balakrishnan K, Iida S, Shibata Y, Koyama T, Kumagawa M
164 - 168	Formation mechanism of Al-segregated region in InAlAs/(110)InP Kangawa Y, Wakizono K, Kuwano N, Oki K, Ito T
169 - 174	Simulation studies on the liquid phase electroepitaxial growth of III-V compound semiconductors Dhanasekaran R, Fareed RSQ, Ramasamy P
175 - 178	Growth and spectroscopic properties of Er,Yb : YCOB crystals Yu YM, Ju JJ, Cha M
179 - 183	Development of edge-defined film-fed growth for the production of YVO4 single crystals with various shapes Kochurikhin VV, Ivanov MA, Yang WS, Suh SJ, Yoon DH
184 - 187	Nd : YVO4 single crystal fiber growth by the LHPG method Huang CH, Chen JC
188 - 192	Crystal growth and optical properties of Bi4Si3O12 : Nd Senguttuvan N, Kidokoro N, Ootsuka K, Ishii M, Kobayashi M, Taira T, Sato Y, Kurimura S
193 - 198	Growth of neodymium doped Y3Al5O12 single crystals by double crucible method Katsurayama M, Anzai Y, Sugiyama A, Koike M, Kato Y
199 - 204	Proposal and demonstration of cached holographic 3D display system using photorefractive crystals Sasaura M, Horikoshi T, Ono M, Imai T, Yagi S, Kubota E, Tate A, Kojima H, Sonehara N
205 - 207	A new nonlinear optical crystal beta-Zn3BPO7 Wu YC, Wang GF, Fu PZ, Liang XY, Xu ZY, Chen CT
208 - 211	Laser molecular beam epitaxy of high-quality GdxY1-xCa4O(BO3)(3) thin films Kim TW, Arai N, Matsumoto Y, Yoshimura M, Furuya H, Mori Y, Sasaki T, Koinuma H
212 - 216	Single crystal growth of SBN by the floating zone method Takekawa S, Furukawa Y, Kaneko N, Kitamura K
217 - 222	Large size SBN single crystal growth by the resistance-heating Czochralski technique using crucible-base cooling Kubota E, Yamazaki H, Ono M, Sasaura M, Yagi S, Imai T, Tate A
223 - 227	Growth and characterization of Er-doped stoichiometric LiNbO3 single crystal fibers by the micro-pulling down method Shur JW, Yang WS, Suh SJ, Lee JH, Fukuda T, Yoon DH
228 - 232	Doubly doped stoichiometric and congruent lithium niobate for holographic data storage Galambos L, Orlov SS, Hesselink L, Furukawa Y, Kitamura K, Takekawa S
233 - 237	Defect analysis in Czochralski grown Bi12SiO20 crystals Kumaragurubaran S, Babu SM, Kitamura K, Takegawa S, Subramanian C
238 - 242	Double crucible Stepanov technique for the growth of striation-free SBN single crystal Takekawa S, Furukawa Y, Lee M, Kitamura K
243 - 247	Growth of LixTa1-xO3 single crystals and their optical properties Kim IG, Takekawa S, Furukawa Y, Lee M, Kitamura K
248 - 251	Investigation of phase equilibria in the triple system Li2O-Cs2O-B2O3 in the region of triborates crystallization Kaplun AB, Meshalkin AB
252 - 255	Image shifts resulting from the misorientation of two individuals in GdCa4O(BO3)(3) crystal Hu XB, Wang JY, Jiang SS, Liu H, Guo M, Jiang HD, Zhang CQ, Tian YL, Huang WX
256 - 260	Growth and defects in YbxY1-xAl3(BO3)(4) crystals Wang JY, Hu XB, Liu H, Li J, Jiang SS, Zhao SR, Teng B, Tian YL, Jiang JH
261 - 264	Growth of Ca4YO(BO3)(3) crystals by vertical Bridgman method Luo J, Fan SJ, Wang JC, Zhong ZW, Qian GX, Sun RY
265 - 269	Dependence of gray-track threshold of GdYCOB on the crystal growth atmosphere Furuya H, Nakao H, Kawamura K, Yap YK, Yoshimura M, Mori Y, Sasaki T
270 - 274	Heat treatment effect upon etch-channel formation in synthetic quartz crystals Kagami T, Matsumoto T, Sugaya N, Kawasaki M, Mitsugi H, Hamaguchi K, Takahashi J
275 - 282	Characterization of synthetic quartz crystals grown from cylindrical seeds produced by ultrasonic machining Guzzo PL, Raslan AA, Shinohara AH, Suzuki CK, Mikawa Y
283 - 288	Growth of high quality 4in diameter Li2B4O7 single crystals Tsutsui N, Ino Y, Imai K, Senguttuvan N, Ishii M
289 - 293	Crystal growth and electromechanical properties of Al substituted langasite (La3Ga5-xAlxSiO14) Kumatoriya M, Sato H, Nakanishi J, Fujii T, Kadota M, Sakabe Y
294 - 298	Piezoelectric Pb[(Zn1/3Nb2/3)(0.91)Ti-0.09]O-3 single crystals with a diameter of 2 inches by the solution Bridgman method supported on the bottom of a crucible Harada K, Hosono Y, Yamashita Y, Miwa K
299 - 304	Crystal growth and electrical properties of lead indium niobate-lead titanate binary single crystal Yasuda N, Ohwa H, Kume M, Hayashi K, Hosono Y, Yamashita Y
305 - 311	Progress in growth of large sized BGO crystals by the low-thermal-gradient Czochralski technique Borovlev YA, Ivannikova NV, Shlegel VN, Vasiliev YV, Gusev VA
312 - 315	Modification of PbWO4 scintillator characteristics by doping Nikl M, Bohacek P, Mihokova E, Solovieva N, Martini M, Vedda A, Fabeni P, Pazzi GP, Kobayashi M, Ishii M, Usuki Y, Zimmerman D
316 - 320	Novel approaches to crystallize materials with narrow liquidus lines: application to spin ladder compound La4+4nCu8+2nO14+8n (n=2,3) and high-T-c cuprate Bi-2223 Watanabe T, Sekar C, Shibata H, Fujii T, Matsuda A, Zenitani Y, Akimitsu J
321 - 324	Mechanism of a-c oriented crystal growth of YBCO thin films by ion beam sputtering Endo T, Itoh KI, Hashizume A, Kohmoto H, Takahashi E, Morimoto D, Srinivasu VV, Masui T, Niwano K, Nakanishi H
325 - 329	Pseudo-binary phase diagram and crystal growth of YyNd1-yBa2Cu3Ox Hayakawa Y, Mori T, Aswal DK, Kumagawa M
330 - 334	Growth of RE-Ba-Cu-O thick film on metal substrate by liquid phase epitaxy process Izumi T, Hobara N, Kakimoto K, Izumi T, Hasegawa K, Kai M, Honjo T, Yao X, Fuji H, Nakamura Y, Shiohara Y
335 - 338	Study of the formation process of solidification structures of faceted 1 2 3 peritectic crystals in superconductive YBCO oxide Mori N, Kuroki T, Ogi K
339 - 342	Vapour-liquid-solid (VLS) growth mechanism of superconducting Bi-Sr-Ca-Cu-O whiskers Jayavel R, Mochiku T, Ooi S, Hirata K
343 - 347	Liquid phase epitaxy of YBa2Cu3O7-x film: exploration of new seed layer materials and additives in the solvent Yamada Y, Hirabayashi I
348 - 352	Rapid growth of YBa2Cu3O7-y films by metalorganic chemical vapor deposition using vapor-liquid-solid mode Yoshida Y, Hirabayashi I, Takai Y
353 - 357	Epitaxial growth of REBa2Cu3O7-y films on various substrates by chemical solution deposition Yamagiwa K, Araki T, Takahashi Y, Hiei H, Kim SB, Matsumoto K, Shibata J, Hirayama T, Ikuta H, Mizutani U, Hirabayashi I
358 - 364	Structure of subgrains in large single-grain RE-Ba-Cu-O (RE = Y, Sm, Nd) bulk superconductors Ogasawara K, Sakai N, Murakami M
365 - 368	T-c enhancement by partial substitution of Ca in superconducting YbBa2Cu4O8 epitaxial films prepared by coating-pyrolysis process Yajima Y, Manabe T, Yamaguchi I, Shimizu T, Mizuta S, Kumagai T
369 - 373	Crystal growth of REBa2Cu3Ox superconductive oxides from semi-solid melt Nakamura Y, Kawase T, Izumi T, Murata K, Shiohara Y
374 - 377	Crystal growth of NdBa2(Cu1-xNix)(3)O7-delta solid solutions by top-seeded solution growth for HTS device and tape applications Yao X, Izumi T, Hobara N, Nakamura Y, Izumi T, Shiohara Y
378 - 383	Real-time simulation of single crystal growth for RE-Ba-Cu-O system Egami M, Izumi T, Shiohara Y
384 - 390	Preferential growth of RE-Ba-Cu-O crystal by liquid phase epitaxy process Nomura K, Hoshi S, Yao X, Kakimoto K, Izumi T, Nakamura Y, Shiohara Y
391 - 395	Growth and characterization of superconducting (GdCe)(2)NbSr2Cu2O10-delta Single crystals Srinivasan E, Uthayakumar S, Jayavel R, Subramanian C, Ramasamy P
396 - 400	Crystal growth of Bi-2(Sr,Nd/Sm)(2)CuOy and their superconductivity Kikuchi M, Itou M, Faqir H, Atou T, Murakami Y, Syono Y
401 - 404	Crystal growth techniques for Tl-based cuprate superconductors Hasegawa M, Takei H, Izawa K, Matsuda Y
405 - 408	Single crystal growth of the spinel-type LiMn2O4 Akimoto J, Takahashi Y, Gotoh Y, Mizuta S
409 - 414	Influence of growth atmosphere on solubility limit of Ce3+ ions in Ce-substituted fibrous yttrium iron garnet single crystals Sekijima T, Itoh H, Fujii T, Wakino K, Okada M
415 - 418	La1-xBaxMnOz thin film growth by ion beam sputtering: effects of oxygen partial pressure Tada M, Yamada J, Srinivasu VV, Sreedevi V, Kohmoto H, Hashizume A, Inamori Y, Tanaka T, Harrou A, Nogues J, Munoz JS, Colino JM, Endo T
419 - 422	Crystal growth of Ca2+xY2-xCu5O10 with edge-sharing CuO2 chains by the traveling-solvent floating-zone method Oka K, Yamaguchi H, Ito T
423 - 427	Control of the anisotropic growth rates of oxide single crystals in floating zone growth Watauchi S, Wakihara M, Tanaka I
428 - 432	Preparation of nanotube-shaped TiO2 powder Seo DS, Lee JK, Kim H
433 - 439	Preparation of nm-sized BaTiO3 crystallites by a LTDS method using a highly concentrated aqueous solution Wada S, Tsurumi T, Chikamori H, Noma T, Suzuki T
440 - 444	Improvement of duality of hydrothermally grown calcite single crystals Yanagisawa K, Kageyama K, Feng Q, Matsushita I
445 - 449	Transverse piezoelectric properties of epitaxial Pb(Yb1/2Nb1/2)O-3-PbTiO3 (50/50) films Yoshimura T, Trolier-McKinstry S
450 - 456	Crystal structure comparison between conductive SrRuO3 and CaRuO3 thin films Higashi N, Watanabe T, Saito K, Yamaji I, Akai T, Funakubo H
457 - 461	Preparation of fine silicon particles from amorphous silicon monoxide by the disproportionation reaction Mamiya M, Takei H, Kikuchi M, Uyeda C
462 - 466	Growth, photophysical and structural properties of Bi2InNbO7 Zou ZG, Ye JH, Arakawa H
467 - 471	High-pressure phases of V2O5: an application of an in situ X-ray observation method to high-pressure synthesis of materials Kusaba K, Ohshima E, Syono Y, Kikegawa T
472 - 476	Structural study of LiKB4O7 and LiRbB4O7: New nonlinear optical crystals Ono Y, Nakaya M, Sugawara T, Watanabe N, Siraishi H, Komatsu R, Kajitani T
477 - 481	High-temperature solution growth of Na2W4O13 crystals and their optical properties Oishi S, Endo N, Itoh M
482 - 486	Crystal growth of rare earth-iron intermetallic compounds by the flux-creep-up method Samata H, Sakamoto K, Yashiro S, Nagata Y
487 - 491	Optical and ESR studies of Ce3+ in perovskite fluoride crystals BaLiF3 and KMgF3 Yamaga M, Imai T, Shimamura K, Fukuda T
492 - 496	Optical and structural studies on BaMgF4: Ce3+ crystals Kodama N, Hoshino T, Yamaga M, Ishizawa N, Shimamura K, Fukuda T
497 - 500	Fluoride crystals: 2 mu m Ho3+ laser emission and energy transfer mechanisms in Er3+ Maroni P, Palatella L, Toncelli A, Tonelli M
501 - 504	Observation of new excitation channel of cerium ion through highly vacuum ultraviolet transparent LiCAF host crystal Kozeki T, Suzuki Y, Sakai M, Ohtake H, Sarukura N, Liu ZL, Shimamura K, Nakano K, Fukuda T
505 - 509	Structural study of colquiriite-type fluorides Ono Y, Nakano K, Shimamura K, Fukuda T, Kajitani T
510 - 515	A process model for silicon carbide growth by physical vapor transport Prasad QS, Chen QS, Zhang H
516 - 520	Single crystal growth of incongruent intermetallic compound ZrCo2Si2 using W crucibles Abe H, Kitazawa H
521 - 526	Crystal growth and structural properties of RRh3B2 (R = Gd, Er, Tm) compounds Ye JH, Shishido T, Fukuda T, Nakajima K
527 - 531	Epitaxial growth of MnSi1.7 layers in the presence of an Sb flux Souno Y, Maeda Y, Tatsuoka H, Kuwabara H
532 - 536	MnSi and MnSi2-x single crystals growth by Ga flux method and properties Okada S, Shishido T, Ogawa M, Matsukawa F, Ishizawa Y, Nakajima K, Fukuda T, Lundstrom T
537 - 541	MBE growth of MnAs on oxide substrates Fujioka H, Noguchi Y, Ikeda T, Katada H, Ono K, Oshima M
542 - 546	Preparation of Bi2Te3 films by electrodeposition Miyazaki Y, Kajitani T
547 - 552	Inhibition of microbial growth, study of solution stability, growth and characterization of potassium fluoride mixed L-arginine phosphate single crystals Hameed ASH, Ravi G, Ramasamy P
553 - 557	Single crystal growth of organic semiconductors by the Repeated Solid Solvent Growth Method using melted anthracene as a solvent Miyahara T, Shimizu M
558 - 562	Fabrication of a frequency conversion device using a novel direction controlled crystal growth method Taima T, Komatsu K, Onodera S, Kaino T
563 - 567	Growth and characterization of zinc thiourea chloride (ZTC): a semiorganic nonlinear optical crystal Rajasekaran R, Ushasree PM, Jayavel R, Ramasamy P
568 - 573	Growth and characterization of L-lysine doped TGS and TGSP single crystals Kumar RM, Muralidharan R, Babu DR, Rajendran KV, Jayavel R, Jayaraman D, Ramasamy P
574 - 579	Orientation fluctuation of organic monomolecular layers at liquid/solid interfaces Isoda S, Nemoto T, Fujiwara E, Adachi Y, Kobayashi T
580 - 585	Fluorinated fullerene thin films grown on the Si(111)-7 x 7 surfaces -STM and HREELS investigations Sadowski JT, Fujikawa Y, Kelly KF, Nakayama K, Sakurai T, Mickelson ET, Hauge RH, Margrave JL
586 - 590	Nano-wire crystals of pi-conjugated organic materials Onodera T, Oshikiri T, Katagi H, Kasai H, Okada S, Oikawa H, Terauchi M, Tanaka M, Nakanishi H
591 - 594	Crystal structure and conducting properties of a SbF6 salt of BEDT-BDTBF Ise T, Takahashi K
595 - 600	Effects of centrifugal acceleration on the flows and segregation in vertical Bridgman crystal growth with steady ampoule rotation Lan CW
601 - 604	Marangoni convection in model of floating zone under microgravity Zeng Z, Mizuseki H, Shimamura K, Higashino K, Fukuda T, Kawazoe Y
605 - 609	Numerical modelling and analysis of binary compound semiconductor growth under microgravity conditions Maekawa T, Hiraoka Y, Ikegami K, Matsumoto S
610 - 614	Lattice Monte Carlo simulation with a renormalized potential in Si Sahara R, Mizuseki H, Ohno K, Kubo H, Kawazoe Y
615 - 618	Theoretical study of embedded InAs quantum dots in GaAs Lie WC, Acosta AS, Fujioka H, Mano T, Mitsui T, Takeuchi M, Oshima M
619 - 624	Position distribution of steps on vicinal surface and surface stiffness Yamamoto T, Akutsu Y, Akutsu N
XIII - XIII	Proceedings of the First Asian Conference on Crystal Growth and Crystal Technology Sendai, Japan, 29 August-1 September 2000 - Editors' preface Nakajima K, Durbin SD, Capper P, Hiyamizu S