Journal of Crystal Growth

Journal of Crystal Growth, Vol.211, No.1-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (91 articles)

1 - 12	Historical aspects of crystal growth technology Scheel HJ
13 - 17	Monte Carlo modeling of silicon crystal growth Beatty KM, Jackson KA
18 - 20	Modeling grain boundaries using a phase-field technique Warren JA, Kobayashi R, Carter WC
21 - 26	Growth dynamics of InGaAs by MBE: process simulation and theoretical analysis Colayni G, Venkat R
27 - 33	Nucleation and growth of supported metal clusters at defect sites on oxide and halide (001) surfaces Venables JA, Harding JH
34 - 42	Investigation of vibrational control of convective flows in Bridgman melt growth configurations Fedoseyev AI, Alexander JID
43 - 48	Dynamic simulations of interface morphologies in free dendritic growth Emmerich H, Kassner K, Ihle T, Weiss A
49 - 61	Diffusion-limited crystal growth in silicate systems: similarity with high-pressure liquid-phase sintering Lupulescu A, Glicksman ME
62 - 67	Crystal growth and liquid-phase epitaxy of gallium nitride Klemenz C, Scheel HJ
68 - 72	On mechanisms of sublimation growth of AlN bulk crystals Segal AS, Karpov SY, Makarov YN, Mokhov EN, Roenkov AD, Ramm MG, Vodakov YA
73 - 77	Vapor-phase epitaxial lateral overgrowth of ZnSe on GaAs Mauk MG, Feyock BW
78 - 81	Epitaxial growth of AlN and Al0.5Ca0.5N layers on aluminum nitride substrates Schowalter LJ, Rojo JC, Slack GA, Shusterman Y, Wang R, Bhat I, Arunmozhi G
82 - 85	Preparation and characterization of sol-gel derived potassium lithium niobate films Zhang HX, Zhou Y, Kam CH, Cheng S, Han XQ, Lam YL, Chan YC
86 - 92	H-dependent magnetic domain structures in La0.67Sr0.33MnO3 thin films Hawley ME, Brown GW, Yashar PC, Kwon C
93 - 97	Studying of transparent conductive ZnO : Al thin films by RF reactive magnetron sputtering Chang JF, Wang HL, Hon MH
98 - 105	Epitaxial growth of oxides with pulsed laser interval deposition Blank DHA, Koster G, Rijnders GAJHM, van Setten E, Slycke P, Rogalla H
XV - XIX	A celebration of the career of Bob Laudise Fratello VJ
106 - 110	Pressure effects in ZnO films using off-axis sputtering deposition Zhu S, Su CH, Lehoczky SL, Peters P, George MA
111 - 115	Synthesis of a new hydroxyapatite-silica composite material Villacampa AI, Garcia-Ruiz JM
116 - 121	Discerning nature's mechanism for making complex biocomposite crystals Smith BL, Paloczi GT, Hansma PK, Levine RP
122 - 136	Crystallization processes in pharmaceutical technology and drug delivery design Shekunov BY, York P
137 - 142	Biomineralization mechanisms: a kinetics and interfacial energy approach Nancollas GH, Wu WJ
143 - 148	Patterned crystallization of calcite in vivo and in vitro Aizenberg J
149 - 156	Distribution coefficients of protein impurities in ferritin and lysozyme crystals - Self-purification in microgravity Thomas BR, Chernov AA, Vekilov PG, Carter DC
157 - 162	Growth of 3'' and 4'' gallium arsenide crystals by the vertical gradient freeze (VGF) method Birkmann B, Rasp M, Stenzenberger J, Muller G
163 - 168	Double crucible LEC growth of In-doped GaAs using inner crucibles with a bottom tube He J, Kou S
169 - 173	Developing a model for electromagnetic control of dopant segregation during liquid-encapsulated crystal growth of compound semiconductors Ma N, Bliss DF, Bryant GG
174 - 178	H-vacancy complex VInH4 abundance and its influences in n-type LEC InP Fung S, Zhao YW, Sun NF, Beling CD, Chen XD, Bi KY, Wu X, Zhang J, Sun TN
179 - 183	Carrier mobility distribution in annealed undoped LEC InP material Zhao YW, Fung S, Beling CD, Sun NF, Chen XD, Sun TN, Zhang J, Bi KY, Wu X
184 - 188	Structural studies on synthesised gallium nitride Kumar MS, Ramasamy P, Kumar J
189 - 193	Liquid-phase epitaxy of low-bandgap III-V antimonides for thermophotovoltaic devices Mauk MG, Shellenbarger ZA, Cox JA, Sulima OV, Bett AW, Mueller RL, Sims PE, McNeely JB, DiNetta LC
194 - 201	Bulk growth of quasi-binary quaternary alloys Marin C, Ostrogorsky AG
202 - 206	Process modeling of the industrial VGF growth process using the software package CrysVUN plus Backofen R, Kurz M, Muller G
207 - 210	Growth of inclusion-free InSb crystals by vertical Bridgman method Mohan P, Senguttuvan N, Babu SM, Ramasamy P
211 - 215	X-ray photoelectron spectroscopy investigation of substrate surface pretreatments for diamond nucleation by microwave plasma chemical vapor deposition Chiang MJ, Hon MH
216 - 219	Low-pressure deposition of diamond by electron cyclotron resonance microwave plasma chemical vapor deposition Chiang MJ, Lung BH, Hon MH
220 - 224	Growth and characterisation of L-tyrosine-doped TGS crystals Meera K, Aravazhi S, Raghavan PS, Ramasamy P
225 - 229	Influence of Ce and Co doping ions on photorefractive effect of SBN : 61 crystals Li MH, Xu XW, Qiu DX, Chong TC, Kumagai H, Hirano M
230 - 236	The correlation of MgO-doped near-stoichiometric LiNbO3 composition to the defect structure Furukawa Y, Kitamura K, Takekawa S, Niwa K, Yajima Y, Iyi N, Mnushkina I, Guggenheim P, Martin JM
237 - 241	YVO4 single-crystal fiber growth by the LHPG method Huang CH, Chen JC, Hu C
242 - 246	Crystal growth and properties of AgGaTe2 Schunemann PG, Setzler SD, Pollak TM, Ohmer MC, Goldstein JT, Zelmon DE
247 - 251	Thermal stability of the Pb(Zn1/3Nb2/3)O-3 -PbTiO3 [PZNT91/9] and Pb(Mg1/3Nb2/3)O-3-PbTiO3 [PMNT68/32] single crystals Ye ZG, Dong M, Yamashita Y
252 - 256	Growth and light yield performance of dense Ce3+-doped (Lu,Y)AlO3 solid solution crystals Petrosyan AG, Ovanesyan KL, Shirinyan GO, Butaeva TI, Pedrini C, Dujardin C, Belsky A
257 - 264	Phase-matched crystal growth of AgGaSe2 and AgGa1-xInxSe2 Schunemann PG, Setzler SD, Pollak TM
265 - 270	Morphology of TSSG grown potassium lithium niobate (KLN) crystal in relation to its structure and growth conditions Xu XW, Chong TC, Zhang GY, Li L, Hu PF, Kumagai H, Hirano M
271 - 275	Growth of large size LBO (Li2B4O7) single crystals by modified Bridgman technique Tsutsui N, Ino Y, Imai K, Senguttuvan N, Ishii M
276 - 280	Growth of paratellurite crystals: effect of axial temperature gradient on the quality of the crystals Kumaragurubaran S, Krishnamurthy D, Subramanian C, Ramasamy P
281 - 285	Growth of potassium lithium niobate (KLN) single crystals for second harmonic generation (SHG) application Li L, Chong TC, Xu XW, Kumagai H, Hirano M
286 - 289	Clusters and their properties in aqueous solutions of KDP, KCl and sugar Li L, Ogawa T
290 - 294	High-temperature solution growth of Cr2+ : CdSe for tunable mid-IR laser application Ndap JO, Adetunji OO, Chattopadhyay K, Rablau CI, Egarievwe SU, Ma X, Morgan S, Burger A
295 - 301	Flux growth and characterization of Cr4+: Ca2GeO4 crystals as a new near infrared tunable laser material Bykov AB, Petricevic V, Steiner J, Yao D, Isaacs LL, Kokta MR, Alfano RR
302 - 307	Growth of Ce-doped LiCaAlF6 and LiSrAlF6 single crystals by the Czochralski technique under CF4 atmosphere Shimamura K, Baldochi SL, Mujilatu N, Nakano K, Liu ZL, Sarukura N, Fukuda T
308 - 312	Structure and morphology of phthalocyanine films grown in electrical fields by vapor deposition Zhu S, Banks CE, Frazier DO, Penn B, Abdeldayem H, Hicks R, Burns HD, Thompson GW
313 - 317	Preparation, microstructural and electrical characterization of SrVO3 single crystal fiber Ardila DR, Andreeta JP, Basso HC
318 - 324	Growth of a 3'' langasite crystal with clear faceting Uda S, Buzanov O
325 - 332	The status of SiC bulk growth from an industrial point of view Muller SG, Glass RC, Hobgood HM, Tsvetkov VF, Brady M, Henshall D, Jenny JR, Malta D, Carter CH
333 - 338	Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT Selder M, Kadinski L, Makarov Y, Durst F, Wellmann P, Straubinger T, Hofmann D, Karpov S, Ramm M
339 - 342	Growth and characterization of high-purity SiC single crystals Augustine G, Balakrishna V, Brandt CD
343 - 346	Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide Vorob'ev AN, Karpov SY, Zhmakin AI, Lovtsus AA, Makarov YN, Krishnan A
347 - 351	Analysis of sublimation growth of bulk SiC crystals in tantalum container Karpov SY, Kulik AV, Zhmakin IA, Makarov YN, Mokhov EN, Ramm MG, Ramm MS, Roenkov AD, Vodakov YA
352 - 359	Modeling of silicon carbide crystal growth by physical vapor transport method Ma RH, Chen QS, Zhang H, Prasad V, Balkas CM, Yushin NK
360 - 364	The influence of thermoelectromagnetic convection (TEMC) on the Bridgman growth of semiconductors Yesilyurt S, Vjusic L, Motakef S, Szofran FR, Croell A
365 - 371	A numerical model for inductively heated cylindrical silicon tube growth system Roy A, Mackintosh B, Kalejs JP, Chen QS, Zhang H, Prasad V
372 - 377	Economic feeder for recharging and "topping off" Fickett B, Mihalik G
378 - 383	Growth of Ga-doped Ge0.98Si0.02 by vertical Bridgman with a baffle Marin C, Ostrogorsky AG
384 - 388	Physical properties of InGaAsP/InP grown by molecular beam epitaxy with valve phosphorous cracker cell Zhang DH, Shi W, Zheng HQ, Yoon SF, Kam CH, Wang XZ
389 - 394	Fabrication of submicrometer structures by PSE/MBE Bacchin G, Nishinaga T
395 - 399	Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source Naritsuka S, Nishinaga T, Tachikawa M, Mori H
400 - 404	InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition Biefeld RM, Phillips JD, Kurtz SR
405 - 410	Arsenic pressure dependence of Ga desorption from MBE high index GaAs substrates Ohachi T, Feng JM, Asai K
411 - 415	Development of a modular, large-scale, high-throughput semicontinuous-mode liquid-phase epitaxy system Mauk MG, Shellenbarger ZA, Sims PE, Bloothoofd W, McNeely JB, Collins SR, Rabinowitz PI, Hall RB, DiNetta LC, Barnett AM
416 - 420	Efficiency difference in Ga adatom incorporation in MBE growth of GaAs with As-2 and As-4 molecular beams Ogura T, Nishinaga T
421 - 427	Design of ceramic springs for use in semiconductor crystal growth in microgravity Kaforey ML, Deeb CW, Matthiesen DH
428 - 433	Ground and space processing of single-crystalline organic thin films Carswell WE, Zugrav MI, Wessling FC, Haulenbeek G
434 - 440	Bridgman growth without crucible contact using the dewetting phenomenon Duffar T, Dusserre P, Picca F, Lacroix S, Giacometti N
441 - 445	Distribution of Te in GaSb grown by Bridgman technique under microgravity Nakamura T, Nishinaga T, Ge P, Huo C
446 - 451	Effect of melt convection at various gravity levels and orientations on the forces acting on a large spherical particle in the vicinity of a solidification interface Bune AV, Sen S, Mukherjee S, Catalina A, Stefanescu DM
452 - 457	Growth of single crystals belonging to a family of one-dimensional oxides: commensurate and incommensurate structures zur Loye HC, Layland RC, Smith MD, Claridge JB
458 - 460	Hydrothermal growth and morphology of calcite single crystals Nefyodova IV, Lyutin VI, Borodin VL, Chvanski PP, Leonyuk NI
461 - 465	Melt growth of non-isoaxial bicrystals of an Fe-3%Si alloy Adamek J, Lejcek P
466 - 470	Directional growth of Al-Nb-X eutectic alloys Rios CT, Milenkovic S, Caram R
471 - 475	Electrochemical growth near the Ba1-xKxBiO3 (x > 0.5)-Ba1.7K1.3Bi2O7 boundary and the crystals properties Shiryaev SV, Barilo SN, Ustinovich SN, Fedotova VV, Gatalskaya VI, Szymczak H, Szymczak R, Baran M
476 - 479	Crystal growth and photoluminescence of CuInXGa1-XSe2 alloys Yoshino K, Yokoyama H, Maeda K, Ikari T
480 - 484	Seeded growth from flux and neutron study of La1-xBaxMnO3 (0.2 < x < 0.5) single crystals Barilo SN, Bychkov GL, Kurnevich LA, Shiryaev SV, Kurochkin LA, Lynn JW, Vasiliu-Doloc L
485 - 490	Directional solidification processing of eutectic alloys in the Ni-Al-V system Milenkovic S, Coelho AA, Caram R
491 - 496	Flux growth of (Y,RE)Al-3(BO3)(4) solid solutions (RE = Nd, Gd, Ho, Yb, Lu) Koporulina EV, Leonyuk NI, Mokhov AV, Pilipenko OV, Bocelli G, Righi L
497 - 500	Hydrothermal synthesis of lead titanate from complexed precursor solutions Gelabert MC, Gersten BL, Riman RE
501 - 505	Growth of superconducting (M2Cu2O3)(m)(CuO2)(n) crystals Maltsev V, Leonyuk L, Babonas GJ, Szymczak R, Reza A
506 - 508	Synthesis and solubility of GaPO4 crystals in acid solutions under hydrothermal conditions Motchany AI, Chvanski PP, Leonyuk NI
XXI - XXI	Bob Laudise - In memoriam Jackson KA
XIII - XIII	Proceedings of the Eleventh American Conference on Crystal Growth and Epitaxy - Tucson, Arizona, USA, 1-6 August 1999 - Preface [Anonymous]