1 - 6 |
X-ray diffraction from epitaxial oxide layers grown from sol-gel Boulle A, Masson O, Guinebretiere R, Dauger A |
7 - 13 |
Growth of beryllium nitride films by pulsed laser deposition; dielectric function determination Soto G, Machorro R, Diaz JA, de la Cruz W, Reyes A |
14 - 19 |
Transparent conducting V-co-doped AZO thin films prepared by magnetron sputtering Suzuki S, Miyata T, Ishii M, Minami T |
20 - 23 |
Electrochemical preparation of In and Al doped ZnO thin films for CuInSe2 solar cells Kemell M, Dartigues F, Ritala M, Leskela M |
24 - 29 |
Influence of substrate properties on the growth of titanium films: part IV Oberhauser P, Abermann R |
30 - 33 |
Effect of substrate bias voltage on the purity of Cu films deposited by non-mass separated ion beam deposition Lim JW, Mimura K, Miyake K, Yamashita M, Isshiki M |
34 - 39 |
Characteristics of ion beam deposited copper thin films as a seed layer: effect of negative substrate bias voltage Lim JW, Miyake K, Isshiki M |
40 - 48 |
High energy Li ion irradiation effects in ferroelectric PZT and SBT thin films Angadi B, Victor P, Jali VM, Lagare MT, Kumar R, Krupanidhi SB |
49 - 54 |
Thermal stability evaluation of diamond-like nanocomposite coatings Yang WJ, Choa YH, Sekino T, Shim KB, Niihara K, Auh KH |
55 - 61 |
Synthesis of cadmium tungstate films via sol-gel processing Lennstrom K, Limmer SJ, Cao GZ |
62 - 68 |
The formation and growth mechanisms of silica thin film and spherical particles through the Stober process Okudera H, Hozumi A |
69 - 74 |
Abnormal growth of LPCVD SiO2 on CoSi2 by high dose As implantation Cho IH, Sung NK, Shim HS, Ryu HH, Ha JH, Lee WG |
75 - 81 |
Crystallization behavior of CoSb3 and (Co,Fe)Sb-3 thin films Schupp B, Bacher I, Hecker M, Mattern N, Savchuk V, Schumann J |
82 - 85 |
An empirical growth model for the biaxially aligned yttria stabilized zirconia films deposited by ion beam assisted deposition Gnanarajan S |
86 - 93 |
Synthesis of rutile and anatase films with high surface areas in aqueous solutions containing urea Yamabi S, Imai H |
94 - 99 |
Atomic layer deposition of WxN/TiN and WNxCy/TiN nanolaminates Elers KE, Saanila V, Li WM, Soininen PJ, Kostamo JT, Haukka S, Juhanoja J, Besling WFA |
100 - 105 |
Adhesion evaluation of immersion plating copper films on silicon by microindentation measurements Magagnin L, Maboudian R, Carraro C |
106 - 111 |
Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy Torrison L, Tolle J, Tsong IST, Kouvetakis J |
112 - 120 |
The influence of deposition conditions on structure and morphology of aluminum nitride films deposited by radio frequency reactive sputtering Cheng H, Sun Y, Hing P |
121 - 125 |
Surface-bound nanoparticles for initiating metal deposition Xu LN, Liao JH, Huang L, Ou DL, Guo ZR, Zhang HQ, Ge CW, Gu N, Liu JZ |
126 - 129 |
A new method for deposition of cubic Ta diffusion barrier for Cu metallization Yuan ZL, Zhang DH, Li CY, Prasad K, Tan CM, Tang LJ |
130 - 135 |
The etching characteristics of YMnO3 thin films in high density Ar/C-4 plasma Kim DP, Kim CI |
136 - 144 |
Determination of interface growth with atomic resolution in FeCo-Si multilayers Cho SJ, Krist T, Mezei F |
145 - 151 |
Photochemical dissociation of p-nitrobenzyl 9,10-dimethoxyanthracene-2-sulfonate films and selective polycation adsorption following irradiation Liu X, Whitten JE |
152 - 156 |
Boron diffusion into nitrogen doped silicon films for P+ polysilicon gate structures Mansour F, Mahamdi R, Jalabert L, Temple-Boyer P |
157 - 161 |
Determination of the electron temperature profile above the evaporative source in an ion plating discharge by spatially resolved optical emission spectroscopy Wilson AD, Davison A, Leyland A, Matthews A, Fancey KS |
162 - 170 |
Bi influence on growth and physical properties of chemical deposited PbS films Pentia E, Pintilie L, Botila T, Pintilie I, Chaparro A, Maffiotte C |
171 - 177 |
Comparison of visible fluorescence properties between sol-gel derived Er3+-Yb3+ and Er3+-Y3+ co-doped TiO2 films Chen SY, Ting CC, Hsieh WF |
178 - 182 |
Characterisation of metal oxide semiconductor capacitor structure using low-k dielectric methylsilsesquioxane with evaporated aluminium and copper gate Aw KC, Ibrahim K |
183 - 189 |
Elastic properties of thin films of cubic system Lee DN |
190 - 202 |
Intrinsic stress generation and relaxation of plasma-enhanced chemical vapor deposited oxide during deposition and subsequent thermal cycling Chen KS, Zhang X, Lin SY |
203 - 215 |
Analysis of the initial fragmentation stage of oxide coatings on polymer substrates under biaxial tension Andersons J, Leterrier Y, Fescenko I |
216 - 227 |
Modeling of residual stresses in a plasma-sprayed zirconia/alumina functionally graded-thermal barrier coating Widjaja S, Limarga AM, Yip TH |
228 - 238 |
Structural characterization of Fe(110) islands grown on alpha-Al2O3(0001) Quintana C, Menendez JL, Huttel Y, Lancin M, Navarro E, Cebollada A |
239 - 243 |
Tribology of fluorinated polymer Langmuir-Blodgett films on hard disk Fan FQ, Miyashita T |
244 - 249 |
Preparation of Gd2O3 doped CeO2 thin films by oxy-acetylene combustion assisted aerosol-chemical vapor deposition technique on various substrates and zone model for microstructure Song HZ, Xia CR, Meng GY, Peng DK |
250 - 257 |
Color changes in chitosan and poly(allyl amine) films upon metal binding Schauer CL, Chen MS, Chatterley M, Eisemann K, Welsh ER, Price RR, Schoen PE, Ligler FS |
258 - 263 |
Stability of silver thin films on cobalt and nickel silicides Milan MM, Alford TL, Mayer JW |
264 - 270 |
Frequency dependent conductivity of aluminium nitride films prepared by ion beam-assisted deposition Lal K, Meikap AK, Chattopadhyay SK, Chatterjee SK, Ghosh P, Ghosh M, Baba K, Hatada R |
271 - 275 |
Constrained martensitic transformations in TiNiCu films Craciunescu CM, Li J, Wuttig M |
276 - 282 |
Proximity-controlled silicon carbide etching in inductively coupled plasma Kim B, Kim S, Ann SC, Lee BT |
283 - 295 |
Damage after annealing and aging at room temperature of platinized silicon substrates Moret MP, Devillers MAC, Tichelaar FD, Aret E, Hageman PR, Larsen PK |
296 - 302 |
Origin of N 1s spectrum in amorphous carbon nitride obtained by X-ray photoelectron spectroscopy Ohta R, Lee KH, Saito N, Inoue Y, Sugimura H, Takai O |
303 - 310 |
A random walk model for the crystallite size effect on the secondary electron yield from insulators Cazaux J |
311 - 315 |
Wettability enhancement by rough surfaces generated by thin film technology Uelzen T, Muller J |
316 - 322 |
Piezoresistance and electrical resistivity of Pd, Au, and Cu films Jen SU, Yu CC, Liu CH, Lee GY |
323 - 324 |
Microstructures and sliding wear resistances of 0.2% carbon steel coatings deposited by HVOF and PTWA thermal spray processes (vol 420, 338, 2002) Edrisy A, Alpas AT |