Journal of Crystal Growth

Journal of Crystal Growth, Vol.278, No.1-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (148 articles)

1 - 2	MBE XIII - 2004 - 13(th) International Conference on Molecular Beam Epitaxy - Preface Jones T
3 - 17	The opportunities, successes and challenges for GaInNAsSb Harris JS
18 - 24	MBE growth and properties of epitaxial metal oxides for high-k dielectrics Osten HJ, Bugiel E, Kirfel O, Czernohorsky M, Fissel A
25 - 37	Spintronics: recent progress and tomorrow's challenges Tanaka M
38 - 45	Pyramids and domes in the InAs/GaAs(001) and Ge/Si(001) systems Costantini G, Rastelli A, Manzano C, Acosta-Diaz P, Katsaros G, Songmuang R, Schmidt OG, Von Kanel H, Kern K
46 - 50	Intermixing in self-assembled InAs quantum dot formation Heyn C, Bolz A, Maltezopoulos T, Johnson RL, Hansen W
51 - 56	PL characteristics of InAs quantum dots with Sb irradiation in growth interruption Matsuura T, Miyamoto T, Ohta M, Matsui Y, Furuhata T, Koyama F
57 - 60	Indium segregation during multilayer InAs/GaAs(001) quantum dot formation Howe P, Le Ru EC, Murray R, Jones TS
61 - 66	Defect-free 50-layer strain-balanced InAs quantum dots grown on InAlGaAs/InP for infrared pliotodetector applications Zhang ZH, Xu CF, Hsieh KC, Cheng KY
67 - 71	InAs/InP quantum dots emitting in the 1.55 mu m wavelength region by inserting ultrathin GaAs and GaP interlayers Gong Q, Notzel R, van Veldhoven PJ, Wolter JH
72 - 77	Molecular beam epitaxy of type IIInSb/InAs nanostructures with InSb sub-monolayers Ivanov SV, Semenov AN, Solov'ev VA, Lyublinskaya OG, Terent'ev YV, Meltser BY, Prokopova LG, Sitnikova AA, Usikova AA, Toropov AA, Kop'ev PS
78 - 82	Ordering of self-assembled Si0.55Ge0.45 islands on vicinal Si(001) substrates Lichtenberger H, Muhlberger M, Schelling C, Schaffler F
83 - 87	Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (001) substrates Poydenot V, Dujardin R, Fournel F, Rouviere JL, Barski A
88 - 93	Ordering of quantum dot molecules by self-organization Von Lippen T, Notzel R, Hamhuis GJ, Wolter JH
94 - 97	Negative differential resistance of pseudomorphic InGaAs quantum-wire FETs Sugaya T, Yamane T, Ogura M, Komori K, Yonei K
98 - 102	Resonant tunneling of electrons through a single self-assembled InAs quantum dot probed via a novel overlayed quantum dot electrode Kamiya I, Tanaka I, Tada Y, Azuma M, Uno K, Sakaki H
103 - 107	Large InAs/GaAs quantum dots with an optical response in the long-wavelength region da Silva MJ, Quivy AA, Martini S, Lamas TE, da Silva ECF, Leite JR
108 - 112	Nanometer-scale GaAs ring structure grown by droplet epitaxy Mano T, Koguchi N
113 - 118	Distribution of self-assembled InAs dots on patterned GaAs (100) substrates Ikpi ME, Atkinson P, Bremner SP, Ritchie DA
119 - 124	Molecular beam epitaxy, photoluminescence and lasing of GaAs/GaSbAs QD nanostructures Meltser BY, Solov'ev VA, Lyublinskaya OG, Toropov AA, Terent'ev YV, Semenov AN, Sitnikova AA, Ivanov SV
125 - 130	Formation process of and lattice parameter variation in InAs/GaAs quantum dots dependent on the growth parameters Kim MD, Kim TW, Woo YD, Kim SG, Hong JS
131 - 135	Growth of InAs/InP(001) nanostructures: The transition from quantum wires to quantum dots Parry HJ, Ashwin MJ, Neave JH, Jones TS
136 - 141	Phosphorus-mediated growth of Ge quantum dots on Si(001) Qin J, Xue F, Wang Y, Bai LH, Cui J, Yang XJ, Fan YL, Jiang ZM
142 - 145	Near-infrared gain in GaSb quantum dots in Si grown by MBE Jo M, Yasuhara N, Sugawara Y, Kawamoto K, Fukatsu S
146 - 150	MBE-grown Au-island-catalyzed ZnSe nanowires Chan SK, Cai Y, Sou IK, Wang N
151 - 155	Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GraAs DWELL quantum Gutierrez M, Hopkinson M, Liu HY, Herrera M, Gonzalez D, Garcia R
156 - 161	Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors Walther M, Schmitz J, Rehm R, Kopta S, Fuchs F, Fleissner J, Cabanski W, Ziegler J
162 - 166	The thickness dependence of InAs sandwiched by GaAlAsSb layers grown by MBE Shibasaki I, Geka H, Okamoto A, Shibata Y
167 - 172	MBE growth optimization of Sb-based interband cascade lasers Hill CJ, Yang RQ
173 - 177	Heat management of MBE-grown antimonide lasers Zhu C, Zhang YG, Li AZ, Zheng YL, Tang T
178 - 182	Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy Mozume T, Kasai J
183 - 187	Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers Kasai J, Mozume T
188 - 192	Growth of dilute GaNSb by plasma-assisted MBE Buckle L, Bennett BR, Jollands S, Veal TD, Wilson NR, Murdin BN, McConville CF, Ashley T
193 - 197	Molecular beam epitaxy of (Ga,Al)AsSb alloys on InP(001) substrates Renard C, Marcadet X, Massies J, Parillaud O
198 - 202	InAs/GaSb type-II superlattices for high performance mid-infrared detectors Haugan HJ, Brown GJ, Smulowicz F, Grazulis L, Mitchel WC, Elhamri S, Mitchell WD
203 - 208	Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary Semenov AN, Solov'ev VA, Meltser BY, Terent'ev YV, Prokopova LG, Ivanov SV
209 - 213	Low-temperature growth and post-growth annealing of GaAsSb Sigmund J, Hartnagel HL
214 - 218	Thermal annealing effects and local atomic configurations in GaInNAs thin films Uno K, Yamada M, Tanaka I, Ohtsuki O, Takizawa T
219 - 223	Electrical and optical properties of (Ga,In)(As,N)/(Al,Ga)As multi-quantum-well structures Hey R, Han YJ, Giehler M, Ramsteiner M, Grahn HT, Ploog KH
224 - 228	Low threshold InGaAsN/GaAs lasers beyond 1500 nm Jaschke G, Averbeck R, Geelhaar L, Riechert H
229 - 233	Nitrogen plasma optimization for high-quality dilute nitrides Wistey MA, Bank SR, Yuen HB, Bae H, Harris JS
234 - 238	InGaAsN on GaAs (111)B for telecommunication laser application Miguel-Sanchez J, Guzman A, Ulloa JM, Hierro A, Munoz E
239 - 243	Dilute nitride absorbers in passive devices for mode locking of solid-state lasers Schon S, Rutz A, Liverini V, Grange R, Haiml M, Zeller SC, Keller U
244 - 248	Excitation power dependent photoluminescence of In0.7Ga0.3As1-xNx quantum dots grown on GaAs (001) Nishikawa A, Katayama R, Onabe K, Hong YG, Tu CW
249 - 253	A possibility of In-N fragments incorporation in InGaAsN MBE growth Yamaguchi T, Uchida M, Yamamoto A, Hashimoto A
254 - 258	Growth and characterization of InAsN alloy films and quantum wells Kuroda M, Nishikawa A, Katayama R, Onabe K
259 - 263	Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing Peng CS, Liu HF, Konttinen J, Pessa M
264 - 267	MBE growth of wide band gap wurtzite MgZnO quasi-alloys with MgO/ZnO superlattices for deep ultraviolet optical functions Fujita S, Tanaka H, Fujita S
268 - 272	The effects of thermal treatments on the electrical properties of phosphorus doped ZnO layers grown by MBE Tampo H, Shibata H, Fons P, Yamada A, Matsubara K, Iwata K, Tamura K, Takasu H, Niki S
273 - 277	Growth and UV-A sensor applications of MgCdS/ZnCdS superlattices Kobayashi M, Ueno J, Enami M, Katsuta S, Ichiba A, Ogura K, Onomitsu K, Horikoshi Y
278 - 281	N-type doping of zinc selenide using a silver iodide thermal effusion source Morrod JK, Graham TCM, Prior KA, Cavenett BC
282 - 287	Thermal diffusion studies of MBE-grown ZnSe/Fe/ZnSe and ZnS/Fe/ZnS structures Sou IK, Wang C, Chan SK, Wong GKL
288 - 292	Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications Koike K, Hama K, Nakashima I, Takada G, Ogata K, Sasa S, Inoue M, Yano M
293 - 298	Molecular beam epitaxial growth of hexagonal ZnMgO films on Si(111) substrates using thin MgO buffer layer Fujita M, Sasajima M, Deesirapipat Y, Horikoshi Y
299 - 304	Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy Lu YM, Wu CX, Wei ZP, Zhang ZZ, Zhao DX, Zhang JY, Liu YC, Shen DZ, Fan XW
305 - 310	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy Liang HW, Lu YM, Shen DZ, Yan JF, Li BH, Zhang JY, Liu YC, Fan XW
311 - 315	Interface disorder of Zn1-xCdxTe/ZnTe multiple quantum wells grown by MBE using RHEED intensity oscillations Park SH, Chang JH, Jung MN, Park YK, Goto K, Yao T
316 - 319	Structural investigations of spatial correlation of CdSe/ZnSe quantum dot stacks grown by molecular beam epitaxy Roventa E, Alexe G, Kroger R, Hommel D, Rosenauer A
320 - 324	Excitation intensity dependence of up-converted emission in ZnSe-ZnTe superlattice grown by MBE Ohashi M, Ichinohe Y, Shigaura G, Sasaki Y, Chikarayumi Y, Kimura N, Kimura N, Sawada T, Suzuki K, Imai K, Saito H, Trubenko PA, Korostelin YV
325 - 328	Epitaxial lift-off of MBE grown II-VI heterostructures using a novel MgS release layer Bradford C, Currran A, Balocchi A, Cavenett BC, Prior KA, Warburton RJ
329 - 334	Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5 mu m on InP(311)B substrates Caroff P, Platz C, Dehaese O, Paranthoen C, Bertru N, Le Corre A, Loualiche S
335 - 341	High-power 1.3 mu m InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system Wilk A, Kovsh AR, Mikhrin SS, Chaix C, Novikov II, Maximov MV, Shernyakov YM, Ustinov VM, Ledentsov NN
342 - 345	Regrowth dynamics of InAs quantum dots on the GaAs circular mesa Xie ZG, Fang W, Cao H, Solomon GS
346 - 350	InP-based quantum dash lasers for wide gain bandwidth applications Deubert S, Somers A, Kaiser W, Schwertberger R, Reithmaier JP, Forchel A
351 - 354	High responsivity quantum-dot infrared photodetector with Al0.1Ga0.9As blocking layers at both sides of the structure Lin SY, Chi JY, Lee SC
355 - 360	Conductive and crack-free AlN/GaN : Si distributed Bragg reflectors grown on 6H-SiC(0001) Ive T, Brandt O, Ploog KH
361 - 366	InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy Hooper SE, Kauer M, Bousquet V, Johnson K, Zellweger C, Heffernan J
367 - 372	Correlation between nucleation, morphology and residual strain of InN grown on Ga-face GaN (0001) Dimakis E, Tsagaraki K, Iliopoulos E, Komninou P, Kehagias T, Delimitis A, Georgakilas A
373 - 377	InN layers grown on silicon substrates: effect of substrate temperature and buffer layers Grandal J, Sanchez-Garcia MA
378 - 382	Characterizations of GaN films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001) substrates by RF-MBE Shen XQ, Shimizu M, Yamamoto T, Honda Y, Okumura H
383 - 386	Structural and electrical properties of AlGaN/GaN HEMTs grown by MBE on SiC, Si(111) and GaN templates Cordier Y, Hugues M, Semond F, Natali F, Lorenzini P, Bougrioua Z, Massies J, Frayssinet E, Beaumont B, Gibart P, Faurie JP
387 - 392	Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption Friel I, Driscoll K, Kulenica E, Dutta M, Paiella R, Moustakas TD
393 - 396	AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111) Cordier Y, Semond F, Hugues M, Natali F, Lorenzini P, Haas H, Chenot S, Laugt M, Tottereau O, Vennegues P, Massies J
397 - 401	Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications Liu XY, Falth JF, Andersson TG, Holmstrom P, Janes P, Ekenberg U, Thylen L
402 - 405	Band gap widening of MBE grown InN layers by impurity incorporation Uesaka Y, Yamamoto A, Hashimoto A
406 - 410	Influence of dislocation density on photoluminescence intensity of GaN Falth JF, Gurusinghe MN, Liu XY, Andersson TG, Ivanov IG, Monemar B, Yao HH, Wang SC
411 - 414	Thick cubic GaN film growth using ultra-thin low-temperature buffer layer by RF-MBE Kimura R, Suzuki T, Ouchi M, Ishida K, Takahashi K
415 - 420	Thermal properties of GaN/Si heterostructures grown by molecular beam epitaxy Cervantes-Contreras M, Quezada-Maya CA, Lopez-Lopez M, de la Cruz GG, Tamura M, Yodo T
421 - 425	Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure Lin RM, Lin CH, Wang JC, Nee TE, Fang BR, Wang RY
426 - 430	Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth Iliopoulos E, Adikimenakis A, Dimakis E, Tsagaraki K, Konstantinidis G, Georgakilas A
431 - 436	Fabrication of cubic and hexagonal GaN micro-crystals on GaAs(001) substrates with relatively thin low-temperature GaN buffer layer Katayama R, Onabe K
437 - 442	Growth of BxAl1-xN layers using decaborane on SiC substrates Nakajima A, Furukawa Y, Yokoya H, Yonezu H
443 - 448	Control of Mg doping of GaN in RF-plasma molecular beam epitaxy Feduniewicz A, Skierbiszewski C, Siekacz M, Wasilewski ZR, Sproule I, Grzanka S, Jakiela R, Borysiuk J, Kamler G, Litwin-Staszewska E, Czernecki R, Bockowski M, Porowski S
449 - 457	Surface kinetics of GaAs(001), InAs(001) and GaSb(001) during MBE growth studied by in situ surface X-ray diffraction Braun W, Kaganer VM, Jenichen B, Satapathy DK, Guo XX, Tinkham BP, Ploog KH
458 - 463	A comparison between GaAs and AlAs deposition on patterned substrates Williams RS, Ashwin MJ, Jones TS, Neave JH
464 - 467	Phosphorous-beam free InP substrate cleaning for MBE Bando H, Yoshino H, Okamoto H, Iizuka K
468 - 472	First-principles investigations of surface reconstructions of an InAs(111)B surface Taguchi A
473 - 477	Daily calibration of InAs growth rates using pyrometry Farrer I, Ritchie DA
478 - 481	RHEED observation of the growth of chalcopyrite-type MnGeP2 on GaAs(001) substrate using Ge-buffer layer Minami K, Jogo J, Morishita Y, Ishibashi T, Sato K
482 - 487	GaAs facet formation and progression during MBE overgrowth of patterned mesas Atkinson P, Ritchie DA
488 - 494	SiGe quantum cascade structures for light emitting devices Zhang J, Li XB, Neave JH, Norris DJ, Cullis AG, Kelsall RW, Lynch S, Towsend P, Paul DJ, Fewster PF
495 - 499	Structural studies of strain-symmetrised modulation-doped Si/SiGe structures grown by molecular beam epitaxy Falub CV, Meduna M, Muller E, Tsujino S, Borak A, Sigg H, Grutzmacher D, Fromherz T, Bauer G
500 - 504	First-principles study on crystal and electronic structures of stacking-fault tetrahedra in epitaxialized Si films Kobayashi R, Nakayama T
505 - 511	GSMBE growth and structural characterisation of SiGeC layers for HBT Zhang J, Neave JH, Li XB, Fewster PF, El Mubarek HAW, Ashburn P, Mitrovic IZ, Buiu O, Hall S
512 - 515	Triggered luminescence in a strained Si1-xGex/Si single quantum well with surface as an electron reservoir Yasuhara N, Fukatsu S
516 - 520	High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001) Wallart X, Pinsard B, Mollot F
521 - 525	Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy Ohta M, Miyamoto T, Kageyama T, Matsuura T, Matsui Y, Furuhata T, Koyama F
526 - 531	Strain-compensated AlAs/(In,Ga)As heterostructures for short-wavelength intersubband absorption and laser emission Semtsiv MP, Ziegler M, Dressler S, Masselink WT, Georgiev N, Dekorsy T, Helm M
532 - 537	Hall electron mobility versus N spatial distribution in III-V-N systems Hashimoto A, Yamaguchi T, Suzuki T, Yamamoto A
538 - 543	Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25/As two-dimensional electron gases Capotondi F, Blasiol G, Ercolani D, Sorba L
544 - 547	Growth of AlAsSb/InGaAs MBE-layers for all-optical switches Cristea P, Fedoryshyn Y, Jackel H
548 - 552	Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy Wu SD, Wang WX, Guo LW, Li ZH, Shang XZ, Liu F, Huang Q, Zhou JM
553 - 557	Improvement of crystal quality of GaInNAs films grown by atomic hydrogen-assisted RF-MBE Shimizu Y, Kobayashi N, Uedono A, Okada Y
558 - 563	Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mu m (InyGa1-yAs/GaAs1-x Sb-x)/ GaAs bilayer quantum wells Niu ZC, Xu XH, Ni HQ, Xu YQ, He ZH, Han Q, Wu RH
564 - 568	As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system Dhellemmes S, Godey S, Wilk A, Wallart X, Mollot F
569 - 574	STEM studies of MBE-grown corrugated structures of GaAs, InGaAs and AlAs on (757)B substrates Noda T, Sumida N, Koshiba S, Nishioka S, Negi Y, Okunishi E, Akiyama Y, Sakaki H
575 - 579	Optical and deep-level spectroscopic study on In0.38GaAsNx/GaAs single-quantum-well structures of x >= 3% grown by molecular beam epitaxy Lay TS, Lin EY, Chang CY, Kong KM, Chen LP, Chang TY, Wang JS, Lin G, Chi JY
580 - 584	Raman scattering in AlAs/GaP and AlAs/AIP strained short-period superlattices Nagano M, Sugie R
585 - 590	Photoluminescence properties of Be-doped GaAs/(Al-0.2 Ga-0.8)(0.51)In0.49P heterostructures subjected to annealing processes Mendez-Garcia VH, Garcia-Motolinia JF, Esparza-Garcia AE, Hernandez IC
591 - 595	Photoreflectance investigations of HEMT structures grown by MBE Zamora-Peredo L, Lopez-Lopez M, Lastras-Martinez A, Mendez-Garcia VH
596 - 599	Growth of InP high electron mobility transistor structures with Te doping Bennett BR, Suemitsu T, Waldron N, del Alamo JA
600 - 603	CBr4 and Be heavily doped InGaAs grown in a production MBE system Godey S, Dhellemmes S, Wilk A, Zaknoune M, Mollot F
604 - 609	Transport properties of InSb and InAs thin films on GaAs substrates Okamoto A, Geka H, Shibasaki I, Yoshida K
610 - 613	Crosshatch observation in MBE-grown be-doped InGaAs epilayer on InP Bando H, Kosuge M, Ban K, Yoshino H, Takahashi R, Okamoto H, Okuno T, Masumoto Y
614 - 618	Electrical properties of InAs thin films grown directly on GaAs(100) substrates by MBE Geka H, Shibasaki I, Okamoto A
619 - 623	MBE-grown high kappa gate dielectrics of HfO2 and (Hf-Al)O-2 for Si and III-V semiconductors nano-electronics Lee WC, Lee YJ, Wu YD, Chang P, Huang YL, Hsu YL, Mannaerts JP, Lo RL, Chen FR, Maikap S, Lee LS, Hsieh WY, Tsai MJ, Lin SY, Gustffson T, Hong M, Kwo J
624 - 628	Depth-profile study of the electronic structures at Ga2O3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy Lay TS, Liao YY, Hung WH, Hong M, Kwo J, Mannaerts JP
629 - 632	Surface diffusion during layer growth of SrTiO3 films with pulsed laser molecular beam epitaxy Li YR, Jiang SW, Zhang Y, Deng XW, Wei XH
633 - 637	Mechanical and optical characteristics of Al-doped C-60 filMS Nishinaga J, Aihara T, Yamagata H, Horikoshi Y
638 - 642	Thin single-crystal SC2O3 films epitaxially grown on Si (111) -structure and electrical properties Chen CP, Hong M, Kwo J, Cheng HM, Huang YL, Lin SY, Chi J, Lee HY, Hsieh YF, Mannaerts JP
643 - 648	Surface modification of Si substrates by CdF2 molecular beam for stable growth of fluoride ultra-thin heterostructures Maeda M, Omae J, Watanabe S, Toriumi Y, Tsutsui K
649 - 654	Growth and magnetic properties of epitaxial MnAs/NiAs/MnAs hetero structures grown on exact GaAs(111)B substrates Nakane R, Kondo J, Yuan MW, Sugahara S, Tanaka M
655 - 660	Growth control, structure and ferrornagnetic properties of digital Mn/GaAs heterostructures Guo XX, Herrmann C, Kong X, Kolovos-Vellianitis D, Daweritz L, Ploog KH
661 - 665	Infrared light-induced beating of Shubnikov-de Haas oscillations in MBE grown InAs/AlSb quantum wells Sadofyev YG, Ramamoorthy A, Bird JP, Johnson SR, Zhang YH
666 - 670	Epitaxial growth of Fe3Si/GaAs(001) hybrid structures for spintronic application Herfort J, Schonherr HP, Kawaharazuka A, Ramsteiner M, Ploog KH
671 - 674	Excitonic transitions in (Ga1-xMx)N thin films with high Curie temperature Jeon HC, Lee JA, Shon Y, Lee SJ, Kang TW, Kim TW, Yeo YK, Cho YH, Kim MD
675 - 679	Magnetic, optical and transport properties of GaCrN-based ferromagnet/nonmagnet/ferromagnet trilayer structures Kim MS, Zhou YK, Kimura S, Emura S, Hasegawa S, Asahi H
680 - 684	Chirped multiple InAs quantum dot structure for wide spectrum device applications Li LH, Rossetti M, Fiore A
685 - 689	Molecular beam epitaxy of p-type cubic GaMnN layers Foxon CT, Novikov SV, Zhao L, Edmonds KW, Giddings AD, Wang KY, Campion RP, Staddon CR, Fay MW, Han Y, Brown PD, Sawicki M, Gallagher BL
690 - 694	Growth of (Ga,Mn)As on GaAs(001) and (311)A in a high-mobility MBE system Reinwald M, Wurstbauer U, Doppe M, Kipferl W, Wagenhuber K, Tranitz HP, Weiss D, Wegscheider W
695 - 698	Electrical characterisation of (Ga,Mn,Cr)As thin films grown by molecular beam epitaxy Ibanez J, Edmonds KW, Henini M, Eaves L, Pastor D, Cusco R, Artus L, Akinaga H
699 - 703	Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE Onomitsu K, Fukui H, Maeda T, Hirayama Y, Horikoshi Y
704 - 708	MBE growth of mid-IR type-II interband laser diodes Schmitz J, Mermelstein C, Kiefer R, Walther M, Wagner J
709 - 713	GSMBE growth of GaInAsP/InP 1.3 mu m-TM-lasers for monolithic integration with optical waveguide isolator Lelarge F, Dagens B, Cuisin C, Le Gouezigou O, Patriarche G, Van Parys W, Vanwolleghem M, Baets R, Gentner JL
714 - 717	High-temperature (T >= 400 K) operation quantum cascade lasers with thin InAs of strain-compensated insertion layers and AlAs blocking barriers Yang QK, Mann C, Fuchs F, Kohler K, Bronner W
718 - 722	Plasma-assisted molecular beam epitaxy of nitride-based photodetectors for UV and visible applications Pau JL, Pereiro J, Rivera C, Munoz E, Calleja E
723 - 727	Molecular beam epitaxy of vertical-emitting microcavity lasers for the 6-8 micron spectral range operating in continuous-wave mode Schwarzl T, Boberl M, Springholz G, Kaufmann E, Roither J, Heiss W, Furst J, Pascher H
728 - 733	Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy Niu ZC, Ni HQ, Xu XH, Xu YQ, He ZH, Han Q, Wu RH
734 - 738	Very low threshold current density 1.3 mu m GaInNAs single-quantum well lasers grown by molecular beam epitaxy Wang SM, Wei YQ, Wang XD, Zhao Q, Sadeghi M, Larsson A
739 - 742	Lead salt mid-IR photodetectors with narrow linewidth Arnold M, Zimin D, Alchalabi K, Zogg H
743 - 746	Increasing the spectral separation between the emission lines from individual CdSe quantum dots through annealing Graham TCM, Tang X, Prior KA, Cavenett BC, Warburton RJ
747 - 750	Long-wavelength InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy Wei YQ, Wang SM, Wang XD, Zhao QX, Sadeghi M, Tangring I, Larsson A
751 - 755	Semiconductor saturable absorber mirror with wavelength tailored distributed Bragg reflector Vainionpaa A, Suomalainen S, Isomaki A, Tengvall O, Pessa M, Okhotnikov OG
756 - 764	MBE growth of terahertz quantum cascade lasers Beere HE, Fowler JC, Alton J, Linfield EH, Ritchie DA, Kohler R, Tredicucci A, Scalari G, Ajili L, Faist J, Barbieri S
765 - 769	Comparison of strain-compensated quantum cascade lasers grown with GaInAs and InP waveguides Boehm G, Friedrich A, Scarpa G, Meyer R, Amann MC
770 - 774	Low threshold distribution feedback quantum cascade lasers at 7.6 mu m grown by gas source molecular beam epitaxy Li AZ, Xu GY, Zhang YG, Li H, Zhang X
775 - 779	Reduction of the threshold current density of GaAs/AlGaAs quantum cascade lasers by optimized injector doping and growth conditions Hofling S, Kallweit R, Seufert J, Koeth J, Reithmaier JP, Forchel A
780 - 784	Continuous-wave operation quantum cascade lasers at 7.95 mu m Xu GY, Li AZ, Zhang YG, Li H