Journal of Vacuum Science & Technology A

Journal of Vacuum Science & Technology A, Vol.15, No.4 Entire volume, number list

ISSN: 0734-2101 (Print)

In this Issue (101 articles)

1801 - 1813	Role of N-2 Addition on CF4/O-2 Remote Plasma Chemical Dry-Etching of Polycrystalline Silicon Matsuo PJ, Kastenmeier BE, Beulens JJ, Oehrlein GS
1814 - 1818	Flexible Fluorocarbon Wire Coatings by Pulsed Plasma-Enhanced Chemical-Vapor-Deposition Limb SJ, Gleason KK, Edell DJ, Gleason EF
1819 - 1823	Growth of Very-Low Temperature Polysilicon Film by Remote Plasma-Enhanced Chemical-Vapor-Deposition Oh JH, Park CY, Cho NI, Nam HG
1824 - 1827	Highly Oriented Rutile-Type TiO2 Films Synthesized by Ion-Beam-Enhanced Deposition Zhang F, Zheng ZH, Ding XZ, Mao YJ, Chen Y, Zhou ZY, Yang SQ, Liu XH
1828 - 1831	Plasma Diagnostics and Processings in CF4/He Radio-Frequency Discharge Matsukura N, Shimada M
1832 - 1836	Some Characteristics of Wide-Gap A-SiC-H Films Deposited by Electron-Cyclotron-Resonance Chemical-Vapor-Deposition Using Acetylene Yoon SF, Ahn J
1837 - 1847	Effect of Reactor Size on Plasma Polymerization of Perfluoropropene Kim HY, Yasuda HK
1848 - 1852	Early Nitriding Stage of Evaporated-Ti Thin-Films by N-Ion Implantation Kasukabe Y, Takeda S, Fiujno Y, Yamada Y, Nagata S, Kishimoto M, Yamaguchi S
1853 - 1863	Kinetic-Study of Low-Energy Argon Ion-Enhanced Plasma-Etching of Polysilicon with Atomic/Molecular Chlorine Chang JP, Arnold JC, Zau GC, Shin HS, Sawin HH
1864 - 1873	Improved Current-Voltage Characteristics of Downstream Plasma-Enhanced Chemical-Vapor-Deposition Sinx Deposited at Low-Temperature by Using He as a Dilution Arps M, Markwitz A
1874 - 1880	Polysilicon-Germanium Gate Patterning Studies in a High-Density Plasma Helicon Source Vallon S, Monget C, Joubert O, Vallier L, Bell FH, Pons M, Regolini JL, Morin C, Sagnes I
1881 - 1889	Role of Steady-State Fluorocarbon Films in the Etching of Silicon Dioxide Using Chf3 in an Inductively-Coupled Plasma Reactor Rueger NR, Beulens JJ, Schaepkens M, Doemling MF, Mirza JM, Standaert TE, Oehrlein GS
1890 - 1896	Comparison of Direct-Current and Radio-Frequency Argon Magnetron Discharges by Optical-Emission and Absorption-Spectroscopy Dony MF, Ricard A, Wautelet M, Dauchot JP, Hecq M
1897 - 1901	3-Dimensional Deposition of Tin Film Using Low-Frequency (50 Hz) Plasma Chemical-Vapor-Deposition Shimozuma M, Date H, Iwasaki T, Tagashira H, Yoshino M, Yoshida K
1902 - 1912	Ion-Assisted Etching and Profile Development of Silicon in Molecular Chlorine Levinson JA, Shaqfeh ES, Balooch M, Hamza AV
1913 - 1921	Integrated Plasma Equipment Model for Polysilicon Etch Profiles in an Inductively-Coupled Plasma Reactor with Subwafer and Superwafer Topography Hoekstra RJ, Grapperhaus MJ, Kushner MJ
1922 - 1928	Electron-Cyclotron-Resonance Plasma-Enhanced Direct-Current Sputtering Discharge with Magnetic-Mirror Plasma-Confinement Misina M, Setsuhara Y, Miyake S
1929 - 1936	Analysis of the Growth-Processes of Plasma-Enhanced Chemical-Vapor-Deposited Diamond Films from Co/H-2 and CH4/H-2 Mixtures Using Real-Time Spectroellipsometry Lee J, Collins RW, Hong B, Messier R, Strausser YE
1937 - 1942	Stabilization of CF4 Plasma-Treated Carbon Surface by Heat-Treated During and After Plasma Treatment Izumi Y, Kamata K, Katoh M, Ohte T, Kojima A
1943 - 1950	Deposition of Titanium Carbide Films from Mixed Carbon and Titanium Plasma Streams Delplanckeogletree MP, Monteiro OR
1951 - 1954	Low-Temperature Deposition of High-Quality Silicon Dioxide Films by Sputtering-Type Electron-Cyclotron-Resonance Plasma Nakashima H, Furukawa K, Liu YC, Gao DW, Kashiwazaki Y, Muraoka K, Shibata K, Tsurushima T
1955 - 1962	Negative-Ion Densities in Chlorine-Containing and Boron-Trichloride-Containing Inductively-Coupled Plasmas Fleddermann CB, Hebner GA
1963 - 1969	Simulation of Pressure Effects in a Multipulsed Nitrogen Plasma Source Ion-Implantation System Bear MJ, Guillory JU
1970 - 1975	Carbon Nitride Thin-Films Prepared by Reactive Sputtering - Elemental Composition and Structural Characterization Lacerda MM, Franceschini DF, Freire FL, Achete CA, Mariotto G
1976 - 1989	A Simplified Collisional Model of Sputtering in the Linear Cascade Regime Mahan JE, Vantomme A
1990 - 1998	Effects of Oxygen-Ion Assist at 1-10 eV on Growth of Bi-2(Sr,Ca)(2)Cuox Films at 540-Degrees-C by Ion-Beam Sputtering Endo T, Yan H, Abe K, Nagase S, Ishida Y, Nishiku H
1999 - 2006	Planar Magnetron Sputtering Discharge Enhanced with Radio-Frequency or Microwave Magnetoactive Plasma Musil J, Misina M, Hovorka D
2007 - 2012	Reactive Sputtering of Titanium Diboride and Titanium Disilicide Maya L, Vallet CE, Fiedor JN
2013 - 2016	Method for the Study of Grain-Boundary Diffusion Effects by Auger-Electron Spectroscopy Sputter Depth Profiling Lee YS, Lim KY, Chung YD, Whang CN, Woo JJ, Lee YP
2017 - 2022	Morphology-Dependent Oxidation Behavior of Reactively Sputtered Titanium-Nitride Films Hinode K, Homma Y, Horiuchi M, Takahashi T
2023 - 2028	Particle Contamination Formation in Magnetron Sputtering Processes Selwyn GS, Weiss CA, Sequeda F, Huang C
2029 - 2034	X-Ray Photoelectron-Spectroscopy Study of TiC Films Grown by Annealing Thin Ti Films on Graphite Miller S, Berning GL, Plank H, Roth J
2035 - 2042	Pulse-Modulated Infrared-Laser Interferometric Thermometry for Noncontact Silicon Substrate-Temperature Measurement Kikuchi J, Fujimura S, Kurosaki R, Yano H
2043 - 2050	Preparation of GaSb(100) Surfaces by Ultraviolet-Irradiation Bertru N, Nouaoura M, Bonnet J, Lassabatere L, Bedel E, Mamy M
2051 - 2057	Oxygen Fixing on Cu Due to Electron-Beam Damage During Auger-Spectroscopy Heras JM, Viscido L
2058 - 2062	X-Ray Photoemission Analysis of Chemically Treated I-III-VI Semiconductor Surfaces Nelson AJ, Schwerdtfeger CR, Herdt GC, King D, Contreras M, Ramanathan K, Obrien WL
2063 - 2068	Mapping of AlxGa1-xAs Band Edges by Ballistic-Electron-Emission Spectroscopy Cheng XC, Collins DA, Mcgill TC
2069 - 2073	Use of Laser Reflectometry for End-Point Detection During the Etching of Magnetic Thin-Films Khamsehpour B, Wilkinson CD, Chapman JN
2074 - 2080	Formation of the Cs/GaAs(001) Interface - Work Function, Cesium Sticking Coefficient, and Surface Optical Anisotropy Kierren B, Paget D
2081 - 2084	Transient Charging and Slow Trapping in Ultrathin SiO2-Films on Si During Electron-Bombardment Shamir N, Mihaychuk JG, Vandriel HM
2085 - 2087	X-Ray-Absorption Spectroscopy Study of Different Solid Carbon Modifications Bressler PR, Lubbe M, Zahn DR, Braun W
2088 - 2094	Fabrication and Characterization of Graded Refractive-Index Silicon Oxynitride Thin-Films Callard S, Gagnaire A, Joseph J
2095 - 2106	Evaluation of Correction Parameters for Elastic-Scattering Effects in X-Ray Photoelectron-Spectroscopy and Auger-Electron Spectroscopy Jablonski A, Powell CJ
2107 - 2118	Chemistry of Actinide and Lanthanide Metal-Ions (M+) in Laser-Ablation of Dispersions of Inorganic-Compounds in Polyimide and Polytetrafluoroethylene Gibson JK
2119 - 2121	Electron-Energy-Loss Spectroscopy of (DME-DCNQI)(2)Cu Mochida M, Shimada T, Koma A
2122 - 2133	High-Resolution Algorithm for Quantitative Elemental Depth Profiling by Angle-Resolved X-Ray Photoelectron-Spectroscopy Williams JM, Beebe TP
2134 - 2142	Laser Single-Photon Ionization Mass-Spectrometry Measurements of Sicl and Sicl2 During Thermal Etching of Si(100) Materer N, Goodman RS, Leone SR
2143 - 2147	Analysis of the X-Ray Photoelectron-Spectrum of Teflon Af-1600 Sacher E, Klembergsapieha JE
2148 - 2152	Engineered Sculptured Nematic Thin-Films Messier R, Gehrke T, Frankel C, Venugopal VC, Otano W, Lakhtakia A
2153 - 2157	Extended-Spectral-Range Fourier-Transform Infrared-Attenuated Total-Reflection Spectroscopy on Si Surfaces Using a Novel Si Coated Ge Attenuated Total-Reflection Prism Rudkevich E, Savage DE, Cai W, Bean JC, Sullivan JS, Nayak S, Kuech TF, Mccaughan L, Lagally MG
2158 - 2166	Optimization of Niobium Thin-Films by Experimental-Design Knappe S, Elster C, Koch H
2167 - 2172	Microstructure, Composition, and Optical-Properties of PbTiO3 Thin-Films Prepared by the Sol-Gel Method Lu CJ, Ren SB, Shen HM, Liu JS, Wang YN
2173 - 2180	Orientation and Order in Microcontact-Printed, Self-Assembled Monolayers of Alkanethiols on Gold Investigated with Near-Edge X-Ray-Absorption Fine-Structure Spectroscopy Fischer D, Marti A, Hahner G
2181 - 2189	Decomposition of B2H6 on Ni(100) Desrosiers RM, Greve DW, Gellman AJ
2190 - 2195	Growth and Characterization of Silicon Thin-Films Employing Supersonic Jets Pacheco KA, Ferguson BA, Mullins CB
2196 - 2201	Characterization of Carbon and Carbon Nitride Thin-Films Using Time-of-Flight Secondary-Ion Mass-Spectrometry Huang LJ, Hung Y, Chang S, Massoumi GR, Lennard WN, Mitchell IV
2202 - 2206	Anodic Fluoride on HgMnTe Sun WG, Kosyachenko LA, Rarenko IM
2207 - 2213	Growth of Gallium Nitride Thin-Films by Liquid-Target Pulsed-Laser Deposition Xiao RF, Sun XW, Li ZF, Cue N, Kwok HS, Liu QZ, Lau SS
2214 - 2218	Atomic Layer Epitaxy Growth of Aluminum-Oxide Thin-Films from a Novel Al(CH3)(2)Cl Precursor and H2O Kukli K, Ritala M, Leskela M, Jokinen J
2219 - 2225	Silicon Epitaxy from Pulsed Supersonic Jets - Growth, Modeling, and Simulation Malik R, Guljari E
2226 - 2233	Growth-Mechanism of 3C-SiC(111) Films on Si Using Tetramethylsilane by Rapid Thermal Chemical-Vapor-Deposition Seo YH, Nahm KS, Suh EK, Lee HJ, Hwang YG
2234 - 2237	Adhesion Improvement Between Au Films and Glass by 1 keV Ar+ Ion Irradiation Jang HG, Kim KH, Han S, Choi WK, Jung HJ, Koh SK, Kim HB
2238 - 2246	Generation of Intense, Hexapole-Selected, Supersonic Beams of Fluorocarbon Radicals - Cf, Cf2, and CF3 Weibel MA, Hain TD, Curtiss TJ
2247 - 2251	Tunable Diode-Laser Spectroscopy Measurement of CH3 and C2H2 Densities in a H2O/CH3OH Radio-Frequency Chemical-Vapor-Deposition Diamond System Kim SC, Billesbach DP, Dillon R
2252 - 2261	Molecular-Dynamics Simulations of Fluorosilyl Species Impacting Fluorinated Silicon Surfaces with Energies from 0.1 to 100 eV Helmer BA, Graves DB
2262 - 2275	Comparison of Microstructural Features of Diamond Composite Coatings with Polycrystalline Diamond or Boron-Nitride Brazed on Tungsten Carbide Tools Jagannadham K, Fan ND, Komanduri R, Narayan J
2276 - 2281	Transmission Through the Quadrupole Mass-Spectrometer Mass Filter - The Effect of Aperture and Harmonics Voo AC, Ng R, Tunstall JJ, Taylor S
2282 - 2286	Characterization of Defect Levels in Chemically Deposited CdS Films in the Cubic-to-Hexagonal Phase-Transition Vigil O, Riech I, Garciarocha M, Zelayaangel O
2287 - 2290	Magnetic Dichroism Effect of Binary-Alloys Using a Circularly-Polarized X-Ray Wu SZ, Schumann FO, Willis RF, Goodman KW, Tobin JG, Carr R
2291 - 2296	Structural Characterization of a Mo/Si Multilayer Reflector by Means of X-Ray-Diffraction Measurements Kim DE, Cha DH, Lee SW
2297 - 2306	Physical-Properties of Dual-Ion Beam Deposited (B0.5-Xsix)N-0.5 Films Zhao XA, Ong CW, Chan KF, Ng YM, Tsang YC, Choy CL, Chan PW
2307 - 2312	Axially-Resolved Study of Highly Ionized Physical Vapor-Deposition Dickson M, Hopwood J
2313 - 2317	Fe-N Gradient Films and Epitaxial Fe16N2 Single-Crystal Films Tian MB, Jiang EY, Sun DC
2318 - 2322	Characterization of the Ion-Plated Tin on AISI-304 Stainless-Steel by Energy-Filtering Transmission Electron-Microscopy Shieu FS, Cheng LH, Sung YC, Huang JH, Yu GP
2323 - 2329	Crystallinity and Texture Promotion in Ws2 Thin-Films Regula M, Ballif C, Remskar M, Levy F
2330 - 2333	Deposition of Copper-Films by an Alternate Supply of CuCl and Zn Juppo M, Ritala M, Leskela M
2334 - 2338	Comparative Effects of Adatom Evaporation and AD-Dimer Diffusion for Si on Si(100)-2X1 Iguain JL, Martin HO, Aldao CM
2339 - 2348	Effects of Nd Content in Al Thin-Films on Hillock Formation Onishi T, Iwamura E, Takagi K, Watanabe T
2349 - 2353	Degradation of ZnS Field-Emission Display Phosphors During Electron-Beam Bombardment Sebastian JS, Swart HC, Trottier TA, Jones SL, Holloway PH
2354 - 2358	Characterization of Heat-Treated Ito/InP Solar-Cells Rosenwaks Y, Li X, Coutts TJ
2359 - 2368	Comparison of Bromine Etching of Polycrystalline and Single-Crystal Cu Surfaces Nakakura CY, Altman EI
2369 - 2374	Proposal for a New Self-Focusing Configuration Involving Porous Silicon for Field-Emission Flat-Panel Displays Nicolaescu D, Filip V, Okuyama F
2375 - 2381	Slip Coefficients for Binary Gas-Mixtures Ivchenko IN, Loyalka SK, Tompson RV
2382 - 2387	Characterization of a Solid Fluorocarbon Film on Magnetic Recording Media Karis TE, Tyndall GW, Fenzelalexander D, Crowder MS
2388 - 2390	Mirror-Finished, Surface-Seal-Type Gate Valve with a Long-Life of About 10(4) Cycles Satou M, Momose T, Tamura K, Ishimaru H
2391 - 2394	Spinning Rotor Gauge in the Range from 10(-4) to Atmospheric-Pressure Boffito C, Moraja M, Pastore G
2395 - 2406	Comparison of the Standards for High and Ultrahigh-Vacuum at 3 National Standards Laboratories Jousten K, Filippelli AR, Tilford CR, Redgrave FJ
2407 - 2412	Quartz-Crystal Microbalance - A New Design Eliminates Sensitivity Outside the Electrodes, Often Wrongly Attributed to the Electric Fringing Field Cumpson PJ
2413 - 2417	Study of Distributed Ion Pumps in the Cornell Electron Storage-Ring Li YL, Kersevan R, Mistry N
2418 - 2425	Recombination at the Silicon-Nitride Silicon Interface Elmiger JR, Schieck R, Kunst M
2426 - 2427	Molecular-Beam Epitaxy of P-Type Znsse Using a Nitric-Oxide Plasma Source Uusimaa P, Rakennus K, Salokatve A, Pessa M, Likonen J
2428 - 2430	How to Distinguish the Raman Modes of Epitaxial GaN with Photon Features from Sapphire Substrate - Optical-Properties of GaN Film Grown by Metalorganic Chemical-Vapor-Deposition - Comment Feng ZC, Schurman M, Stall RA
2431 - 2433	On the Relation Between Preferential Emission and Bulk Composition in Binary Alloy Sputtering Zheng LP, Li RS, Li SY
2434 - 2436	Rarefied-Gas Flow-Through a Long Tube at Arbitrary Pressure and Temperature Drops Sharipov F
2437 - 2440	Measurements of Current Transport in Metal/Si1-xGex Schottky Diodes He L, Shi ZQ
2441 - 2445	Comparison of Initial Oxidation of Si(111)7X7 with Ozone and Oxygen Investigated by 2nd-Harmonic Generation Nakamura K, Kurokawa A, Ichimura S
2446 - 2448	Orientation of Vacuum-Evaporated BaF2 Films in the Presence of Nitrogen Sircar P, Lebret NG
2449 - 2451	High-Vacuum Co-Evaporator for Thin-Film Deposition of Molecular Organic Conductors Fraxedas J, Caro J, Figueras A
2452 - 2454	Improved Design for an Aluminum Evaporator Keck HG, Kopatzki E, Behm RJ
2455 - 2455	Effects of Readsorption on Outgassing Rate Measurements (Vol 14, Pg 2599, 1996) Redhead PA
2456 - 2456	Relative Sensitivity Factors of B Related to SiGe Alloy Composition on Secondary-Ion Mass-Spectrometry with an Oxygen Primary Ion-Beam (Vol 14, Pg 2361, 1996) Fujinaga K