Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.18, No.1 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (107 articles)

1 - 6	Influence of the depth calibration procedure on the apparent shift of impurity depth profiles measured under conditions of long-term changes in erosion rate Wittmaack K
7 - 9	In situ atomic force microscopy observation on the decay of small islands on Au single crystal in acid solution Hirai N, Watanabe K, Shiraki A, Hara S
10 - 12	Preparation of macroscopic two-dimensional ordered array of indium nanodots Chen SH, Fei GT, Cui P, Cheng GS, Zhu Y, Zhu XG, Zeng ZY, Zhang LD
13 - 15	Growth and modification of Ag islands on hydrogen terminated Si(100) surfaces Butcher MJ, Jones FH, Beton PH
16 - 20	Comparative study of Ni nanowires patterned by electron-beam lithography and fabricated by lift-off and dry etching techniques Park YD, Jung KB, Overberg M, Temple D, Pearton SJ, Holloway PH
21 - 24	Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces Zhou W, Xu B, Xu HZ, Jiang WH, Liu FQ, Gong Q, Ding D, Liang JB, Wang ZG, Zhu ZM, Li GH
25 - 31	Fabrication and transport measurements of YBa2Cu3O7-x nanostructures Larsson P, Nilsson B, Ivanov ZG
32 - 36	Low-permittivity nanocomposite materials using sculptured thin film technology Venugopal VC, Lakhtakia A, Messier R, Kucera JP
37 - 40	Atomic force microscopy and transmission electron microscopy observations of KOH-etched GaN surfaces Shiojima K
41 - 47	Atomic force microscope study of amorphous silicon and polysilicon low-pressure chemical-vapor-deposited implanted layers Edrei R, Shauly EN, Hoffman A
48 - 54	Analysis of electron standing waves in a vacuum gap of scanning tunneling microscopy: Measurement of band bending through energy shifts of electron standing wave Suganuma Y, Tomitori M
55 - 59	Atomic force microscope tip-induced anodization of titanium film for nanofabrication of oxide patterns Huh C, Park SJ
60 - 63	Scanning tunneling microscopy of defects in NbSe2 Prodan A, Marinkovic V, Gril R, Ramsak N, van Midden HJP, Boswell FW, Bennett JC
64 - 68	Atomic force microscopy of solid-state reaction of alcohol: Substitution and dehydration Zeng QD, Wang C, Bai CL, Li Y, Yan XJ
69 - 75	Frictional properties of titanium carbide, titanium nitride, and vanadium carbide: Measurement of a compositional dependence with atomic force microscopy Lee S, El-bjeirami O, Perry SS, Didziulis SV, Frantz P, Radhakrishnan G
76 - 81	Scanning tunneling microscope study of diamond films for electron field emission Rakhimov AT, Suetin NV, Soldatov ES, Timofeyev MA, Trifonov AS, Khanin VV, Silzars A
82 - 89	Electromagnetic transmission of nanometric circular aperture on top of a metal coated optical fiber tip: Theory Alvarez L, Xiao MF
90 - 93	InP-based photonic micro-sensor for near field optical investigations Belier B, Castagne M, Falgayrettes P, Bonnafe J, Santoso A, Leclercq JL
94 - 99	Megahertz silicon atomic force microscopy (AFM) cantilever and high-speed readout in AFM-based recording Hosaka S, Etoh K, Kikukawa A, Koyanagi H
100 - 103	Cantilever technique for the preparation of cross sections for transmission electron microscopy using a focused ion beam workstation Langford RM, Reeves CM, Goodall JG, Findlay J, Jeffree CE
104 - 106	Carbon-nanotube probe equipped magnetic force microscope Arie T, Nishijima H, Akita S, Nakayama Y
107 - 111	Effects of molecular properties on nanolithography in polymethyl methacrylate Dobisz EA, Brandow SL, Bass R, Mitterender J
112 - 116	Critical tool performance analysis for SCALPEL extensibility Stanton ST, Liddle JA, Waskiewicz WK, Mkrtchyan MM
117 - 121	Resolution of the multiple aperture pixel by pixel enhancement of resolution electron lithography concept Kampherbeek BJ, Wieland MJ, Kruit P
122 - 126	Thermostable trilayer resist for niobium lift-off Dubos P, Charlat P, Crozes T, Paniez P, Pannetier B
127 - 135	Double-layer inorganic antireflective system for KrF lithography Xu M, Ko TM
136 - 139	On-wafer spectrofluorometric evaluation of the response of photoacid generator compounds in chemically amplified photoresists Feke GD, Hessman D, Grober RD, Lu B, Taylor JW
140 - 143	In situ normal incidence reflectance study on the effect of growth rate of nucleation layer on GaN by metalorganic chemical vapor deposition Kim DJ, Moon YT, Ahn KS, Park SJ
144 - 149	Ion-etch produced damage on InAs(100) studied through collective-mode electronic Raman scattering Tanzer TA, Bohn PW, Roshchin IV, Green LH
150 - 155	Substrate transfer process for InP-based heterostructure barrier varactor devices Arscott S, Mounaix P, Lippens D
156 - 165	Sub-0.1 mu m gate etch processes: Towards some limitations of the plasma technology? Desvoivres L, Vallier L, Joubert O
166 - 171	High-performance silicon dioxide etching for less than 0.1-mu m-high-aspect contact holes Samukawa S, Mukai T
172 - 190	Ion-assisted etching and profile development of silicon in molecular and atomic chlorine Levinson JA, Shaqfeh ESG, Balooch M, Hamza AV
191 - 196	Temperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl-2 Materer N, Goodman RS, Leone SR
197 - 200	Round-off of trench corner by post-cylindrical molecular pump sidewall oxidation for 0.25 mu m and beyond technologies Chung YS, Jeon CW, Kim JH, Han SK, Hwang JW, Kim SY, Lee JG, Hyun IS
201 - 207	Effects of slurry formulations on chemical-mechanical polishing of low dielectric constant polysiloxanes: hydrido-organo siloxane and methyl silsesquioxane Chen WC, Yen CT
208 - 215	Dielectric anisotropy and molecular orientation of fluorinated polymers confined in submicron trenches Cho TH, Lee JK, Ho PS, Ryan ET, Pellerin JG
216 - 220	High dielectric constant (Ba0.65Sr0.35)(Ti0.41Zr0.59)O-3 capacitors for Gbit-scale dynamic random access memory devices Kim JS, Yoon SG
221 - 230	Effectiveness of Ti, TiN, Ta, TaN, and W2N as barriers for the integration of low-k dielectric hydrogen silsesquioxane Zeng YX, Russell SW, McKerrow AJ, Chen LH, Alford TL
231 - 236	Orientation control in PZT/Pt/TiN multilayers with various Si and SiO2 underlayers for high performance ferroelectric memories Kushida-Abdelghafar K, Torii K, Mine T, Kachi T, Fujisaki Y
237 - 241	Development of tungsten nitride film as barrier layer for copper metallization Ganguli S, Chen L, Levine T, Zheng B, Chang M
242 - 251	Characterization of WF6/N-2/H-2 plasma enhanced chemical vapor deposited WxN films as barriers for Cu metallization Li H, Jin S, Bender H, Lanckmans F, Heyvaert I, Maex K, Froyen L
252 - 261	Material and process studies in the integration of plasma-promoted chemical-vapor deposition of aluminum with benzocyclobutene low-dielectric constant polymer Talevi R, Gundlach H, Bian ZL, Knorr A, van Gestel M, Padiyar S, Kaloyeros AE, Geer RE, Shaffer EO, Martin S
262 - 266	Integration of Pt/Ru electrode structures by metalorganic chemical-vapor deposition on poly-Si/SiO2/Si Choi ES, Yang JH, Park JB, Yoon SG
267 - 278	Mechanistic feature-scale profile simulation of SiO2 low-pressure chemical vapor deposition by tetraethoxysilane pyrolysis Labun AH, Moffat HK, Cale TS
279 - 282	Consistent refractive index parameters for ultrathin SiO2 films Wang Y, Irene EA
283 - 287	Thermal stability and etching characteristics of electron beam deposited SiO and SiO2 LaRoche JR, Ren F, Lothian R, Hong J, Pearton SJ, Lambers E, Hsu CH, Wu CS, Hoppe M
288 - 292	Dielectric properties of SiO2 thin films prepared by the sol-gel technique Garcia-Cerda LA, Perez-Roblez JF, Gonzalez-Hernandez J, Mendoza-Galvan A, Vorobiev YV, Prokhorov EF
293 - 295	Ultraviolet light enhancement of Ta2O5 dry etch rates Lee KP, Cho H, Singh RK, Pearton SJ, Hobbs C, Tobin P
296 - 298	Comment on: "Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy" Paparazzo E
299 - 302	Mapping of wafer profile to plasma processing conditions: Forward and reverse maps Lane J, Rietman EA, Layadi N, Lee JTC
303 - 306	Compensation effect during water desorption from siloxane-based spin-on dielectric thin films Proost J, Baklanov M, Maex K, Delaey L
307 - 312	Atomic fluorine beam etching of silicon and related materials Larson PR, Copeland KA, Dharmasena G, Lasell RA, Keil M, Johnson MB
313 - 316	Secondary ion mass spectroscopic analysis of copper migration at the copper/polyimide interface Miki N, Tanaka K, Takahara A, Kajiyama T
317 - 320	Wavelength-independent optical lithography Pau S, Nalamasu O, Cirelli R, Frackoviak J, Timko A, Watson P, Klemens F, Timp G
321 - 324	Organic/SiO2 chemical vapor deposited nanocomposites as templates for nanoporous silica Senkevich JJ
325 - 327	Combinatorial approach for the synthesis of terpolymers and their novel application as very-high-contrast resists for x-ray nanolithography Gonsalves KE, Wang JZ, Wu HP
328 - 333	Sharpening of field-ion specimens and positioning of features of interest by ion-beam milling Larson DJ, Russell KF, Cerezo A
337 - 337	Microelectronics and nanometer structures processing, measurement, and phenomena - Papers from the Fifth International Workshop on the Measurement, Characterization, and Modeling of Ultra-shallow Doping Profiles in Semiconductors - 28-31 March 1999 - Research Triangle Park North Carolina -Preface Larson L
338 - 345	Design and integration considerations for end-of-the roadmap ultrashallow junctions Osburn CM, De I, Yee KF, Srivastava A
346 - 353	Front end of line considerations far progression beyond the 100 nm node ultrashallow junction requirements Cleavelin CR, Covington BC, Larson LA
354 - 360	Models and methods: Effective use of technology-computed aided design in the industry Mouli CV
361 - 368	Status and review of two-dimensional carrier and dopant profiling using scanning probe microscopy De Wolf P, Stephenson R, Trenkler T, Clarysse T, Hantschel T, Vandevorst W
369 - 380	Qualification of spreading resistance probe operations. I Clarysse T, Vandervorst W
381 - 388	Qualification of spreading resistance probe operations. II Clarysse T, Vandervorst W
389 - 392	Modeling of ultrashallow spreading resistance probe calibration curves Hillard RJ, Ramey SM, Ye CW
393 - 400	Need to incorporate the real micro-contact distribution in spreading resistance correction schemes Clarysse T, Vandervorst W
401 - 404	Comparison of contact radius models for ultrashallow spreading resistance profiles Hartford EJ, Ramey SM, Ye CW, Hartford CL
405 - 408	Nonmonotonic behavior of the scanning capacitance microscope for large dynamic range samples Stephenson R, Verhulst A, De Wolf P, Caymax M, Vandervorst W
409 - 413	Carrier concentration dependence of the scanning capacitance microscopy signal in the vicinity of p-n junctions Kopanski JJ, Marchiando JF, Rennex BG
414 - 417	Limitations of the calibration curve method for determining dopant profiles from scanning capacitance microscope measurements Marchiando JF, Kopanski JJ, Albers J
418 - 427	Evaluating probes for "electrical" atomic force microscopy Trenkler T, Hantschel T, Stephenson R, De Wolf P, Vandervorst W, Hellemans L, Malave A, Buchel D, Oesterschulze E, Kulisch W, Niedermann P, Sulzbach T, Ohlsson O
428 - 434	Dopant dose loss at the Si-SiO2 interface Vuong HH, Rafferty CS, Eshraghi SA, Ning J, McMacken JR, Chaudhry S, McKinley J, Stevie FA
435 - 439	Cluster formation during annealing of ultra-low-energy boron-implanted silicon Collart EJH, Murrell AJ, Foad MA, van den Berg JA, Zhang S, Armour D, Goldberg RD, Wang TS, Cullis AG
440 - 444	SiO2 thickness determination by x-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry Cole DA, Shallenberger JR, Novak SW, Moore RL, Edgell MJ, Smith SP, Hitzman CJ, Kirchhoff JF, Principe E, Nieveen W, Huang FK, Biswas S, Bleiler RJ, Jones K
445 - 449	Shallow junction formation by decaborane molecular ion implantation Foad MA, Webb R, Smith R, Matsuo J, Al-Bayati A, T-Sheng-Wang, Cullis T
450 - 453	Process characterization of law-dose, threshold-voltage adjust channel implants using mercury-probe capacitance-voltage measurements Sherbondy J, Hillard R
454 - 457	Production of shallow ion-implanted layers using rapid electron-beam annealing under the condition of transient-enhanced outdiffusion Kagadei VA, Proskurovsky DI
458 - 461	Ultra-low-energy ion-implant simulation using computational-efficient molecular dynamics schemes and the local damage accumulation model Kang JW, Kang ES, Son MS, Hwang HJ
462 - 467	Process interactions between low-energy ion implantation and rapid-thermal annealing for optimized ultrashallow junction formation Murrell AJ, Collart EJH, Foad MA, Jennings D
468 - 471	Process integration issues for doping of ultrashallow junctions Current MI, Foad MA, Murrell AJ, Collart EJH, de Cock G, Jennings D
472 - 476	Profiling of ultrashallow junctions Goeckner MJ, Felch SB, Fang Z, Oberhofer A, Chia VKF, Mount GR, Poulakos M, Keenan WA
477 - 482	Arsenic doped buried plate characterization in deep trenches for a 0.25 mu m complementary metal-oxide-semiconductor technology by chemical etching Kruger D, Gaworzewski P, Kurps R, Schmidt K, Luhmann C
483 - 488	Surface quantification by ion implantation through a removable layer Stevie FA, Roberts RF, McKinley JM, Decker MA, Granger CN, Santiesteban R, Hitzman CJ
489 - 492	Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis Magee CW, Jacobson D, Gossmann HJ
493 - 495	Use of two beam energies in secondary ion mass spectrometry analysis of shallow implants: Resolution-matched profiling Cooke GA, Ormsby TJ, Dowsett MG, Parry C, Murrell A, Collart EJH
496 - 500	Depth scale distortions in shallow implant secondary ion mass spectrometry profiles Schueler BW, Reich DF
501 - 502	Study of pre-equilibrium sputter rates for ultrashallow depth profiling with secondary ion mass spectrometry Ronsheim PA, Murphy RJ
503 - 508	Use of an SF5+ polyatomic primary ion beam for ultrashallow depth profiling on an ion microscope secondary ion mass spectroscopy instrument Gillen G, Walker M, Thompson P, Bennett J
509 - 513	Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon Loesing R, Guryanov GM, Hunter JL, Griffis DP
514 - 518	Depth profiling of ultra-shallow implants using a Cameca IMS-6f McKinley JM, Stevie FA, Neil T, Lee JJ, Wu L, Sieloff D, Granger C
519 - 523	Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument Napolitani E, Carnera A, Storti R, Privitera V, Priolo F, Mannino G, Moffatt S
524 - 528	In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy Wittmaack K, Griesche J, Osten HJ, Patel SB
529 - 532	New developments for shallow depth profiling with the Cameca IMS 6f Schuhmacher M, Rasser B, Desse F
533 - 539	Extraction of two-dimensional metal-oxide-semiconductor field effect transistor structural information from electrical characteristics Richards WR, Shen M
540 - 544	Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling De Wolf P, Vandervorst W, Smith H, Khalil N
545 - 548	Effective channel length and base width measurements by scanning capacitance microscopy Raineri V, Lombardo S
549 - 554	Two dimensional dopant and carrier profiles obtained by scanning capacitance microscopy on an actively biased cross-sectioned metal-oxide-semiconductor field-effect transistor Zavyalov VV, McMurray JS, Stirling SD, Williams CC, Smith H
555 - 559	Practicalities and limitations of scanning capacitance microscopy for routine integrated circuit characterization Stephenson R, De Wolf P, Trenkler T, Hantschel T, Clarysse T, Jansen P, Vandervorst W
560 - 565	Two-dimensional dopant profile of 0.2 mu m metal-oxide-semiconductor field effect transistors Wang XD, Mahaffy R, Tan K, Shih CK, Lee JJ, Foisy M
566 - 571	Comparative study of two-dimensional junction profiling using a dopant selective etching method and the scanning capacitance spectroscopy method Mahaffy R, Shih CK, Edwards H
572 - 575	Quantitative two-dimensional profiling of 0.35 mu m transistors with lightly doped drain structures McDonald A, Mahaffy R, Wang XD, Kuklewicz C, Shih CK, Dennis M, Tiffin D, Kadoch D, Duane M
576 - 579	Electrochemical etching of silicon: A powerful tool for delineating junction profiles in silicon devices by transmission electron microscopy Spinella C, D'Arrigo G
580 - 585	High-resolution two-dimensional dopant characterization using secondary ion mass spectrometry Ukraintsev VA, Chen PJ, Gray JT, Machala CF, Magel LK, Chang MC
586 - 594	New aspects of nanopotentiometry for complementary metal-oxide-semiconductor transistors Trenkler T, Stephenson R, Jansen P, Vandervorst W, Hellemans L
595 - 601	Ion implantation damage model for B, BF2, As, P, and Si in silicone Son MS, Hwang HJ
602 - 604	Nondestructive profile measurements of annealed shallow implants Borden P, Nijmeijer R, Li JP, Bechtler L, Lingel K